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公开(公告)号：KR101811066B1
公开(公告)日：2017-12-20
申请号：KR1020120066770
申请日：2012-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/02041 , H01L21/67051 , H01L21/6719 , Y02E60/34 , Y10T137/0318 , Y10T137/598
Abstract: 본발명의액처리장치는, 상판(32)에는, 수평면상에서상기상판(32)을회전시키는상판회전기구가마련되어있다. 컵(40)의주위에설치된통형의컵 외주통(50)은, 그상단이컵(40)의상방에있는상승위치와, 상승위치보다하방에위치하는하강위치의사이에서승강하도록되어있다. 노즐(82a)을지지하는노즐지지아암(82)은, 컵외주통(50)이상승위치에있을때에상기컵 외주통(50)의측면의측면개구(50m)를통해컵 외주통(50) 내로진출한진출위치와컵 외주통(50)으로부터외방으로후퇴한후퇴위치의사이에서수평방향으로이동한다.
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公开(公告)号：KR101668139B1
公开(公告)日：2016-10-20
申请号：KR1020120066786
申请日：2012-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/67051 , G03F7/423
Abstract: 본발명의액처리장치에서는, 상판(32)은, 기판유지부(21)에유지된기판(W)을상방으로부터덮는진출위치와, 수평방향에있어서진출위치로부터후퇴한위치인후퇴위치의사이에서수평방향으로이동하도록되어있다. 청정화된가스를하측방향으로흐르게하기위한에어후드(70)는, 기판유지부(21)에유지된기판(W)을상방으로부터덮는하강위치와, 하강위치보다상방에위치하는상승위치의사이에서승강하도록되어있다.
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公开(公告)号：KR1020140045904A
公开(公告)日：2014-04-17
申请号：KR1020137006440
申请日：2012-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/027
CPC classification number: H01L21/02041 , H01L21/465 , H01L21/67051 , H01L21/6719 , H01L21/68785 , H01L21/68792 , H01L21/302
Abstract: 본 발명의 액처리 장치는, 기판(W)을 수평으로 유지하여 회전시키는 기판 유지부(21)와, 기판 유지부에 유지된 기판에 대하여 처리액을 공급하는 처리액 노즐(82)과, 기판 유지부에 유지된 기판의 둘레 가장자리의 외측에 마련되며, 처리액 노즐에 의해 기판에 공급된 뒤의 처리액을 받기 위한 컵(40)과, 기판 유지부에 유지된 기판을 위쪽에서 덮는 상부판(32)과, 상부판을 회전시키는 상부판 회전 구동 기구와, 상부판의 둘레 가장자리를 둘러싸는 환형의 액받이 공간(132)을 갖는 액받이 부재(130)를 구비하고 있다.
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公开(公告)号：KR1020130008459A
公开(公告)日：2013-01-22
申请号：KR1020120066786
申请日：2012-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/67051 , G03F7/423
Abstract: PURPOSE: A liquid processing apparatus and a liquid processing method are provided to improve the drying process of a substrate by using the gas purified by a hood. CONSTITUTION: A substrate holding unit horizontally maintains a substrate. A nozzle(82a) supplies processing liquid to the substrate. A cup receives the processing liquid. An air hood(70) flows purified gas down. A cup circumference case(50) is installed in the cup.
Abstract translation: 目的：提供液体处理装置和液体处理方法，以通过使用由发动机罩净化的气体来改善基材的干燥过程。 构成：基板保持单元水平地保持基板。 喷嘴（82a）向基板供给处理液。 杯子接收处理液体。 空气罩（70）将净化气体向下流动。 杯形外壳（50）安装在杯子中。
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公开(公告)号：KR101593651B1
公开(公告)日：2016-02-12
申请号：KR1020110045876
申请日：2011-05-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/67028 , H01L21/67017 , H01L21/67051 , Y10S134/902
Abstract: 기판의린스처리시에기판이열 변형되거나처리액과린스액이반응하는것을방지하여린스액의비산을방지하는것이다. 본발명에서는, 기판의표면을처리액으로액처리한후에처리액보다저온의린스액으로린스처리하는기판액처리에있어서, 액처리와린스처리와의사이에기판의표면의온도를처리액의액 온도미만또한린스액의액 온도보다높은온도로하는중간처리를행하는것으로하였다. 중간처리는, 처리액의액 온도미만또한린스액의액 온도보다높은온도의중간처리액을기판으로공급하는것으로하였다. 또한, 중간처리액을기판의이면으로만공급하는것으로하였다. 또한, 처리액및 린스액의공급을정지한상태로기판을회전시키는것으로하였다. 또한, 액처리시에처리액으로서반응열의생성을수반하는화학반응을행하는복수종류의약액의혼합액을기판으로공급하고또한, 중간처리시에어느한 약액의공급을정지하는것으로하였다.
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Patent Agency Ranking
公开(公告)号：KR1020120100803A
公开(公告)日：2012-09-12
申请号：KR1020120021826
申请日：2012-03-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306 , H01L21/67
CPC classification number: H01L21/30604 , H01L21/6708
Abstract: PURPOSE: An etching method, an etching apparatus, and a storage medium are provided to obtain a high etching rate of a silicon nitride film by pre-heating a substrate with heated H2SO4 before an etching process. CONSTITUTION: Aspin chuck(10) comprises a substrate holding part(14) and a rotation driving part(16). A cup(18) receiving a processing liquid distributed from a wafer is installed around the substrate holding part. A chemical liquid nozzle(20) supplies a chemical liquid to the wafer. A chemical liquid supply tool(26) comprises a sulfuric acid supply system(30) and a supply system(40). A pump(33) and a heater(34) are installed in a circulation duct(32) of the sulfuric acid supply system.
Abstract translation: 目的：提供蚀刻方法，蚀刻装置和存储介质以通过在蚀刻工艺之前用加热的H 2 SO 4预热衬底来获得氮化硅膜的高蚀刻速率。 构成：阿斯班卡盘（10）包括基板保持部（14）和旋转驱动部（16）。 接收从晶片分配的处理液的杯（18）安装在基板保持部分周围。 化学液体喷嘴（20）向晶片供应化学液体。 化学液体供应工具（26）包括硫酸供应系统（30）和供应系统（40）。 泵（33）和加热器（34）安装在硫酸供应系统的循环管道（32）中。
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公开(公告)号：KR102237508B1
公开(公告)日：2021-04-06
申请号：KR1020140073526
申请日：2014-06-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/08 , H01L21/02
Abstract: 소수화처리된기판의표면을제전하는것이가능한액 처리방법등을제공한다. 액처리가행해진회전하는기판(W)의표면에소수화액을공급하여, 상기기판의표면을소수화하고, 이소수화된기판(W)의표면에, 알칼리성의린스액을공급하여린스세정을행함으로써, 액처리에따라대전한기판(W)의제전을행한다.
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公开(公告)号：KR101751568B1
公开(公告)日：2017-06-27
申请号：KR1020137006440
申请日：2012-08-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/027
CPC classification number: H01L21/02041 , H01L21/465 , H01L21/67051 , H01L21/6719 , H01L21/68785 , H01L21/68792
Abstract: 본발명의액처리장치는, 기판(W)을수평으로유지하여회전시키는기판유지부(21)와, 기판유지부에유지된기판에대하여처리액을공급하는처리액노즐(82)과, 기판유지부에유지된기판의둘레가장자리의외측에마련되며, 처리액노즐에의해기판에공급된뒤의처리액을받기위한컵(40)과, 기판유지부에유지된기판을위쪽에서덮는상부판(32)과, 상부판을회전시키는상부판회전구동기구와, 상부판의둘레가장자리를둘러싸는환형의액받이공간(132)을갖는액받이부재(130)를구비하고있다.
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公开(公告)号：KR1020140000158A
公开(公告)日：2014-01-02
申请号：KR1020130070236
申请日：2013-06-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/311 , H01L21/306
CPC classification number: H01L21/02057 , G03F7/423 , H01L21/31133 , H01L21/67051
Abstract: The purpose of the present invention is to smoothly remove a target layer without damaging a lower layer of the substrate. The substrate processing device (1) removes the target layer by supplying a mixture of sulfuric acid and hydrogen peroxide on a substrate (3) in which the target layer is formed on the surface of the lower layer. The substrate processing device (1) includes a substrate processing chamber (16) for processing the substrate (3), a substrate maintaining member (12) installed at the substrate processing chamber (16) and formed to maintain the substrate (3), a mixture supply member (13) for supplying the mixture of the sulfuric acid and hydrogen peroxide on the substrate maintained by the substrate maintaining member (12) at temperatures and a mixing ratio of the hydrogen peroxide which does not damage the lower layer, and an OH group supply member (14) for supplying fluid containing of an OH group on the substrate (3). The OH group supply member (14) supplies the fluid containing of the OH group which does not damage the lower layer when the mixture and the OH group are mixed in the substrate (3).
Abstract translation: 本发明的目的是平滑地去除目标层而不损坏基底的下层。 基板处理装置（1）通过在下层的表面上形成有目标层的基板（3）上供给硫酸和过氧化氢的混合物来除去目标层。 基板处理装置（1）包括用于处理基板（3）的基板处理室（16），安装在基板处理室（16）上并形成为保持基板（3）的基板保持部件 混合物供应构件（13），用于在不损坏下层的过氧化氢的温度和混合比例下将硫酸和过氧化氢的混合物供给到由基板保持构件（12）保持的基板上，以及OH 用于在衬底（3）上提供含有OH基团的流体的组供应构件（14）。 当混合物和OH基团混合在基材（3）中时，OH基团供给部件（14）供给含有不损坏下层的OH基团的流体。
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公开(公告)号：KR1020110126558A
公开(公告)日：2011-11-23
申请号：KR1020110045876
申请日：2011-05-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/67028 , H01L21/67017 , H01L21/67051 , Y10S134/902 , H01L21/302
Abstract: PURPOSE: A liquid processing apparatus, a liquid processing method and a computer-readable storage medium storing liquid processing program are provided to the loss inside a substrate processing chamber by preventing the dispersion of processing liquid accompanied by substrate deformation. CONSTITUTION: In a liquid processing apparatus, a liquid processing method and a computer-readable storage medium storing liquid processing program, a substrate supporting unit(40) supports a substrate(2) therein. The substrate supporting unit has a disc turn table in a rotation shaft in horizontal. A processing liquid supply unit(41) process a liquid to a substrate to supply the process liquid to the surface of the substrate. A lines liquid supply unit(42) rinses a substrate by supplying rinse liquid at lower temperature than processing liquid. The lines liquid supply unit has an arm which is mounted in the top of a supporting shaft extended up and down.
Abstract translation: 目的：通过防止伴随基板变形的处理液的分散，向基板处理室内的损失提供液体处理装置，液体处理方法和存储液体处理程序的计算机可读存储介质。 构成：在液体处理装置，液体处理方法和存储液体处理程序的计算机可读存储介质中，基板支撑单元（40）在其中支撑基板（2）。 基板支撑单元在旋转轴中具有水平的盘转台。 处理液体供应单元（41）将液体处理到基板以将处理液体供应到基板的表面。 管线液体供给单元（42）通过在比处理液低的温度下供给冲洗液来冲洗基板。 线液供给单元具有安装在上下延伸的支撑轴的顶部的臂。
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