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    검사 방법 및 장치, 검사 방법 및 장치에서 사용되는 기판, 및 디바이스 제조 방법
    1.
    发明公开
    검사 방법 및 장치, 검사 방법 및 장치에서 사용되는 기판, 및 디바이스 제조 방법 审中-公开
    检查方法和装置基板及其使用方法和装置制造方法

    公开(公告)号：KR20180019783A

    公开(公告)日：2018-02-26

    申请号：KR20187004695

    申请日：2014-05-02

    Applicant: ASML NETHERLANDS BV

    Inventor： BOGAART ERIK ,  BIJNEN FRANCISCUS ,  DEN BOEF ARIE ,  MATHIJSSEN SIMON GIJSBERT JOSEPHUS

    IPC: G03F7/20 ,  G01N21/65 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66

    CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

    Abstract: 기판에는디바이스구조물및 계측구조물(800)이제공된다. 디바이스구조물은하나이상의파장의여기방사선의비탄성산란을나타내는재료를포함한다. 디바이스구조물은하나이상의치수에서충분히작아서비탄성산란의특성이양자구속에의하여크게영향받게하는구조를포함한다. 계측구조물(800)은조성및 치수에있어서디바이스피쳐와유사한디바이스-유사구조물(800b), 및교정구조물(800a)을포함한다. 교정구조물은조성에있어서디바이스피쳐와유사하지만적어도하나의치수에있어서상이하다. 라만분광을구현하는검사장치및 방법을사용하면, 디바이스-유사구조물의치수는디바이스-유사구조물및 교정구조물로부터비탄성적으로산란된방사선의스펙트럼피쳐를비교함으로써측정될수 있다.

    Abstract translation: 衬底配备有器件结构和度量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受量子限制的显着影响。 度量结构（800）包括类似于器件特征和校准结构（800a）的组成和尺寸的器件状结构（800b）。 校准结构与组成装置中的装置特征类似，但在至少一个维度上不同。 使用实施拉曼光谱学的检查设备和方法，可以通过比较来自类似装置的结构和校准结构的非弹性散射辐射的光谱特征来测量装置状结构的尺寸。

    POSITION MEASURING APPARATUS, POSITION MEASURING METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    4.
    发明申请
    POSITION MEASURING APPARATUS, POSITION MEASURING METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    位置测量装置，位置测量方法，平面设备和装置制造方法

    公开(公告)号：WO2014019846A3

    公开(公告)日：2014-05-22

    申请号：PCT/EP2013064982

    申请日：2013-07-16

    Applicant: ASML NETHERLANDS BV

    Inventor： MATHIJSSEN SIMON GIJSBERT JOSEPHUS ,  DEN BOEF ARIE JEFFREY

    IPC: G03F9/00

    CPC classification number: G03F7/70141 ,  G03F9/7026 ,  G03F9/7034

    Abstract: An apparatus for measuring positions of marks on a substrate, includes an illumination arrangement for supplying radiation with a predetermined illumination profile across a pupil of the apparatus, an objective lens for forming a spot of radiation on a mark using radiation supplied by said illumination arrangement, a radiation processing element for processing radiation that is diffracted by the mark, a first detection arrangement for detecting variations in an intensity of radiation output by the radiation processing element and for calculating therefrom a position of the mark, an optical arrangement, a second detection arrangement, wherein the optical arrangement serves to direct diffracted radiation to the second detection arrangement, and wherein the second detection arrangement is configured to detect size and/or position variations in the radiation and to calculate therefrom a defocus and/or local tilt of the mark.

    Abstract translation: 一种用于测量基板上的标记位置的装置，包括：用于向设备的光瞳提供具有预定照明轮廓的辐射的照明装置;用于使用由所述照明装置提供的辐射在标记上形成辐射点的物镜; 用于处理由标记衍射的辐射的辐射处理元件;第一检测装置，用于检测由辐射处理元件输出的辐射强度的变化，并用于计算标记的位置，光学装置，第二检测装置 ，其中所述光学装置用于将衍射辐射引导到所述第二检测装置，并且其中所述第二检测装置被配置为检测所述辐射中的尺寸和/或位置变化并由其计算所述标记的散焦和/或所述局部倾斜。

    MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    5.
    发明申请
    MARK POSITION MEASURING APPARATUS AND METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    标记位置测量设备和方法，光刻设备和设备制造方法

    公开(公告)号：WO2014056708A3

    公开(公告)日：2014-06-26

    申请号：PCT/EP2013069664

    申请日：2013-09-23

    Applicant: ASML NETHERLANDS BV ,  ASML HOLDING NV

    Inventor： MATHIJSSEN SIMON GIJSBERT JOSEPHUS ,  DEN BOEF ARIE JEFFREY ,  DRAZKIEWICZ STANLEY ,  KREUZER JUSTIN ,  NIJMEIJER GERRIT JOHANNES

    IPC: G03F9/00

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F9/7069 ,  G03F9/7088

    Abstract: An apparatus to measure the position of a mark, the apparatus including an illumination arrangement to direct radiation across a pupil of the apparatus, the illumination arrangement comprising an illumination source to provide multiple-wavelength radiation of substantially equal polarization and a wave plate to alter the polarization of the radiation in dependency of the wavelength, such that radiation of different polarization is supplied; an objective lens to direct radiation on the mark using the radiation supplied by the illumination arrangement while scanning the radiation across the mark in a scanning direction; a radiation processing element to process radiation that is diffracted by the mark and received by the objective lens; and a detection arrangement to detect variation in an intensity of radiation output by the radiation processing element during the scanning and to calculate from the detected variation a position of the mark in at least a first direction of measurement.

    Abstract translation: 一种测量标记位置的设备，所述设备包括照射装置以将辐射引导通过装置的瞳孔，所述照射装置包括照射源以提供基本上相同的偏振的多波长辐射和波片以改变 辐射的偏振取决于波长，从而提供不同偏振的辐射; 物镜，用于使用由照明装置提供的辐射将辐射引导到标记上，同时沿扫描方向在标记上扫描辐射; 辐射处理元件，用于处理由标记衍射并被物镜接收的辐射; 以及检测装置，用于检测在扫描期间由放射线处理元件输出的放射线的强度的变化，并根据检测到的变化来计算标记在至少第一测量方向上的位置。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSUTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    6.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSUTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    用于测量微结构不对称的方法和装置，位置测量方法，位置测量装置，平面设备和装置制造方法

    公开(公告)号：WO2014146906A3

    公开(公告)日：2014-11-20

    申请号：PCT/EP2014054345

    申请日：2014-03-06

    Applicant: ASML NETHERLANDS BV

    Inventor： MATHIJSSEN SIMON GIJSBERT JOSEPHUS

    IPC: G03F9/00

    CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F9/7046 ,  G03F9/7076 ,  G03F9/7088 ,  G03F9/7092

    Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of a mark comprising a periodic structure. An illumination optical system focuses radiation of different colors and polarizations into a spot (406) which scans said structure. Multiple position-dependent signals I A (G,R,N,F), I B (G,R,N,F) are detected (430A, 430B) in a detection optical system and processed (PU) to obtain multiple candidate position measurements. Each mark comprises sub-structures of a size smaller than a resolution of the optical system. Each mark is formed with a positional offset between the sub-structures and larger structures that is a combination of both known (d1, d2) and unknown (∆d) components. A measured position of at least one mark is calculated using signals from a pair of marks (702-1, 702-2), together with information on differences between the known offsets. in order to correct for said unknown component of said positional offset.

    Abstract translation: 光刻设备包括对准传感器，其包括用于读取包括周期性结构的标记的位置的自参考干涉仪。 照明光学系统将不同颜色和偏振的辐射聚焦到扫描所述结构的光斑（406）中。 在检测光学系统中检测多个位置相关信号I A（G，R，N，F），I B（G，R，N，F）（430A，430B）并处理（PU）以获得多个候选位置测量。 每个标记包括尺寸小于光学系统的分辨率的子结构。 每个标记形成在子结构和作为已知（d1，d2）和未知（Δd）分量的组合的较大结构之间的位置偏移。 使用来自一对标记（702-1,702-2）的信号以及关于已知偏移之间的差异的信息来计算至少一个标记的测量位置。 以便校正所述位置偏移的所述未知分量。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    7.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    用于测量显微结构的不对称性的方法和设备，位置测量方法，位置测量设备，光刻设备和设备制造方法

    公开(公告)号：WO2014026819A3

    公开(公告)日：2014-04-10

    申请号：PCT/EP2013065069

    申请日：2013-07-17

    Applicant: ASML NETHERLANDS BV

    Inventor： MATHIJSSEN SIMON GIJSBERT JOSEPHUS ,  BOGAART ERIK WILLEM ,  TINNEMANS PATRICIUS ALOYSIUS JACOBUS ,  DEN BOEF ARIE JEFFREY

    IPC: G03F9/00 ,  G03F7/20

    CPC classification number: G01B11/14 ,  G01B9/02 ,  G01B11/27 ,  G03F7/70058 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7069 ,  G03F9/7088

    Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

    Abstract translation: 一种光刻设备包括对准传感器，该对准传感器包括用于读取包括周期性结构的对准目标的位置的自参考干涉仪。 一种照明光学系统，用于将辐射聚焦到所述结构上的一个点上。 不对称检测光学系统接收由周期性结构衍射的正辐射和负辐射阶数的份额，并分别在第一和第二检测器上形成所述光斑的第一和第二图像，其中所述负阶辐射用于形成第一图像，以及 所述正序照射被用于形成第二图像。 处理器，用于一起处理来自所述第一和第二检测器的代表所述正和负阶的强度的信号，以产生周期性结构中的不对称性的测量结果。 不对称测量可用于提高对准传感器读取位置的准确度。

    Metrology method and associated metrology device
    8.
    发明专利
    Metrology method and associated metrology device 未知

    公开(公告)号：IL317185A

    公开(公告)日：2025-01-01

    申请号：IL31718524

    申请日：2024-11-21

    Applicant: ASML NETHERLANDS BV ,  CALADO VICTOR EMANUEL ,  MATHIJSSEN SIMON GIJSBERT JOSEPHUS ,  ANDERSON AMANDA ELIZABETH

    Inventor： CALADO VICTOR EMANUEL ,  MATHIJSSEN SIMON GIJSBERT JOSEPHUS ,  ANDERSON AMANDA ELIZABETH

    Abstract: Disclosed is a metrology method. The method comprises obtaining measurement data relating to measurement of at least one target using two or more different illumination profiles; and a respective parameter of interest value for a parameter of interest for each of said two or more different illumination profiles. The method described determining, from said measurement data, a respective measurement parameter deviation value for each of said two or more different illumination profiles, said measurement parameter deviation value describing a deviation in a measurement parameter with respect to a measurement parameter value attributed to a region of interest of said target or a sub-target thereof; determining a relationship for the target between the parameter of interest values and the measurement parameter deviation values; and determining one or both of a corrected parameter of interest value and a preferred illumination profile from said relationship.

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