公开(公告)号：NL2012362A

公开(公告)日：2014-09-30

申请号：NL2012362

申请日：2014-03-04

Applicant: ASML NETHERLANDS BV

Inventor： WILEY JAMES NORMAN ,  SCACCABAROZZI LUIGI ,  BROUNS DERK SERVATIUS GERTRUDA ,  ARIAS ESPINOZA JUAN DIEGO ,  WINTER LAURENTIUS ,  DHALLUIN FLORIAN DIDIER ALBIN ,  RIZO DIAGO PEDRO

IPC: G03F7/20

公开(公告)号：NL2003640A

公开(公告)日：2010-05-18

申请号：NL2003640

申请日：2009-10-14

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/68

公开(公告)号：NL2009213A

公开(公告)日：2013-02-19

申请号：NL2009213

申请日：2012-07-20

Applicant: ASML NETHERLANDS BV

Inventor： BLEEKER ARNO ,  WINTER LAURENTIUS

IPC: G03F7/20

公开(公告)号：NL2004323A

公开(公告)日：2010-10-18

申请号：NL2004323

申请日：2010-03-02

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20

公开(公告)号：NL2009850A

公开(公告)日：2013-06-05

申请号：NL2009850

申请日：2012-11-21

Applicant: ASML NETHERLANDS BV

Inventor： ENGBLOM PETER ,  KOHLER CARSTEN ,  STAALS FRANK ,  WINTER LAURENTIUS

IPC: G03F7/20

公开(公告)号：NL2006073A

公开(公告)日：2011-08-15

申请号：NL2006073

申请日：2011-01-26

Applicant: ASML NETHERLANDS BV

Inventor： KOHLER CARSTEN ,  LAAN HANS ,  STAALS FRANK ,  WINTER LAURENTIUS ,  GODFRIED HERMAN

IPC: G03F7/20

Abstract: Embodiments of the invention related to lithographic apparatus and methods. A lithographic method comprises calculating a laser metric based on a spectrum of laser radiation emitted from a laser to a lithographic apparatus together with a representation of an aerial image of a pattern to be projected onto the substrate by the lithographic apparatus, and using the laser metric to modify operation of the laser or adjust the lithographic apparatus, and projecting the pattern onto the substrate.

公开(公告)号：NL2003806A

公开(公告)日：2010-06-16

申请号：NL2003806

申请日：2009-11-16

Applicant: ASML NETHERLANDS BV

Inventor： SANTAMARIA LUIS ALBERTO COLINA ,  FINDERS JOZEF ,  WINTER LAURENTIUS

IPC: G03F7/20

Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.

公开(公告)号：NL2003689A

公开(公告)日：2010-05-27

申请号：NL2003689

申请日：2009-10-22

Applicant: ASML NETHERLANDS BV

Inventor： WINTER LAURENTIUS ,  FINDERS JOZEF

IPC: G03F7/20

Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.