-
公开(公告)号:KR20200125942A
公开(公告)日:2020-11-05
申请号:KR20207025275
申请日:2019-02-28
Applicant: ASML NETHERLANDS BV
Inventor: MA YUE , KEMPEN ANTONIUS THEODORUS WILHELMUS , HUMMLER KLAUS MARTIN , MOORS JOHANNES HUBERTUS JOSEPHINA , ROMMERS JEROEN HUBERT , VAN DE WIEL HUBERTUS JOHANNES , LAFORGE ANDREW DAVID , BRIZUELA FERNANDO , WIEGGERS ROB CARLO , GOMES UMESH PRASAD , NEDANOVSKA ELENA , KORKMAZ CELAL , KIM ALEXANDER DOWNN , DUARTE RODRIGUES NUNES RUI MIGUEL , VAN DIJCK HENDRIKUS ALPHONSUS LUDOVICUS , VAN DRENT WILLIAM PETER , JONKERS PETER GERARDUS , ZHU QIUSHI , YAGHOOBI PARHAM , WESTERLAKEN JAN STEVEN CHRISTIAAN , LEENDERS MARTINUS HENDRIKUS ANTONIUS , ERSHOV ALEXANDER IGOREVICH , FOMENKOV IGOR VLADIMIROVICH , LIU FEI , JACOBS JOHANNES HENRICUS WILHELMUS , KUZNETSOV ALEXEY SERGEEVICH
Abstract: EUV 방사선을생성하기위한시스템(SO) 내의하나이상의반사광학요소의반사율열화는광학요소를포함하는진공챔버(26) 내로의가스의제어된도입에의하여감소된다. 가스는수소와같은또 다른가스의흐름에추가될수 있거나수소라디칼의도입과번갈아가며추가될수 있다.
-
公开(公告)号:CA3116145A1
公开(公告)日:2020-04-23
申请号:CA3116145
申请日:2019-10-02
Applicant: ASML NETHERLANDS BV
Inventor: VAN ZWOL PIETER-JAN , BALTUSSEN SANDER , DE GRAAF DENNIS , FRANKEN JOHANNES CHRISTIAAN LEONARDUS , GIESBERS ADRIANUS JOHANNES MARIA , KLEIN ALEXANDER LUDWIG , KLOOTWIJK JOHAN HENDRIK , KNAPEN PETER SIMON ANTONIUS , KURGANOVA EVGENIA , KUZNETSOV ALEXEY SERGEEVICH , NOTENBOOM ARNOUD WILLEM , VALEFI MAHDIAR , VAN DE KERKHOF MARCUS ADRIANUS , VAN DEN EINDEN WILHELMUS THEODORUS ANTHONIUS JOHANNES , VAN DER WOORD TIES WOUTER , WONDERGEM HENDRIKUS JAN , ZDRAVKOV ALEKSANDAR NIKOLOV
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising: at least one membrane layer supported by a planar substrate, wherein the planar substrate comprises an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate, wherein the step of selectively removing the inner region of the planar substrate comprises using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer; such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border comprising the border region of the planar substrate and the first sacrificial layer situated between the border and the membrane layer.
-
公开(公告)号:CA2954307C
公开(公告)日:2022-08-30
申请号:CA2954307
申请日:2015-07-02
Applicant: ASML NETHERLANDS BV
Inventor: NIKIPELOV ANDREY ALEXANDROVICH , BANINE VADIM YEVGENYEVICH , BENSCHOP JOZEF PETRUS HENRICUS , BOOGAARD ARJEN , DHALLUIN FLORIAN DIDIER ALBIN , KUZNETSOV ALEXEY SERGEEVICH , PETER MARIA , SCACCABAROZZI LUIGI , VAN DER ZANDE WILLEM JOAN , VAN ZWOL PIETER-JAN , YAKUNIN ANDREI MIKHAILOVICH
Abstract: Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 1017 cm-3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
-
公开(公告)号:CA2954307A1
公开(公告)日:2016-01-07
申请号:CA2954307
申请日:2015-07-02
Applicant: ASML NETHERLANDS BV
Inventor: NIKIPELOV ANDREY ALEXANDROVICH , BANINE VADIM YEVGENYEVICH , BENSCHOP JOZEF PETRUS HENRICUS , BOOGAARD ARJEN , DHALLUIN FLORIAN DIDIER ALBIN , KUZNETSOV ALEXEY SERGEEVICH , PETER MARIA , SCACCABAROZZI LUIGI , VAN DER ZANDE WILLEM JOAN , VAN ZWOL PIETER-JAN , YAKUNIN ANDREI MIKHAILOVICH
Abstract: Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 1017 cm-3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
-
-
-