公开(公告)号：WO2013178404A3

公开(公告)日：2014-03-20

申请号：PCT/EP2013058375

申请日：2013-04-23

Applicant: ASML NETHERLANDS BV

Inventor： LYULINA IRINA ,  BIJNEN FRANCISCUS ,  EDART REMI ,  KIERS ANTOINE ,  KUBIS MICHAEL

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F7/70141 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method.

Abstract translation: 确定第一图案的对准标记在基板上相对于已经存在于基板上的第一图案的第二图案的有用性的方法包括测量对准标记的位置，对对准标记的位置进行建模，确定 测量和建模位置之间的模型误差，测量第一和第二模式之间的对应覆盖误差，并将模型误差与覆盖误差进行比较，以确定对准标记的有用性。 随后，当处理下一个基板时，可以使用该信息，从而改善这些基板的覆盖层。 可以根据该方法操作光刻设备和/或覆盖测量系统。

公开(公告)号：NL2009345A

公开(公告)日：2013-04-02

申请号：NL2009345

申请日：2012-08-23

Applicant: ASML NETHERLANDS BV

Inventor： SANDEN STEFAN ,  HAREN RICHARD ,  SIMONS HUBERTUS ,  EDART REMI ,  WEI XIUHONG ,  KUBIS MICHAEL ,  LYULINA IRINA

IPC: G03F7/20

公开(公告)号：NL2013417A

公开(公告)日：2015-04-07

申请号：NL2013417

申请日：2014-09-05

Applicant: ASML NETHERLANDS BV

Inventor： YPMA ALEXANDER ,  MENGER JASPER ,  DECKERS DAVID ,  HAN DAVID ,  KOOPMAN ADRIANUS ,  LYULINA IRINA ,  MIDDLEBROOKS SCOTT ,  HAREN RICHARD ,  WILDENBERG JOCHEM

IPC: G03F7/20

Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.

公开(公告)号：NL2008168A

公开(公告)日：2012-08-28

申请号：NL2008168

申请日：2012-01-24

Applicant: ASML NETHERLANDS BV

Inventor： LYULINA IRINA ,  SIMONS HUBERTUS ,  TENNER MANFRED ,  HERES PIETER ,  KEMENADE MARC ,  SANDEN STEFAN ,  SLOTBOOM DAAN

IPC: G03F7/20

Abstract: Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined and measured locations of the marks are used to generate radial basis functions. Model parameters of said substrate are calculated using the generated radial basis functions as a basis function across said substrate. Finally, the estimated model parameters are used to control the lithographic apparatus in order to expose the substrate.

公开(公告)号：NL2010691A

公开(公告)日：2013-12-02

申请号：NL2010691

申请日：2013-04-23

Applicant: ASML NETHERLANDS BV

Inventor： LYULINA IRINA ,  BIJNEN FRANCISCUS ,  EDART REMI ,  KIERS ANTOINE ,  KUBIS MICHAEL

IPC: G03F7/20 ,  G03F9/00 ,  H01L23/544

公开(公告)号：NL2009719A

公开(公告)日：2013-06-05

申请号：NL2009719

申请日：2012-10-29

Applicant: ASML NETHERLANDS BV

Inventor： WEI XIUHONG ,  BIJNEN FRANCISCUS ,  HAREN RICHARD ,  KERKHOF MARCUS ,  MOS EVERHARDUS ,  SIMONS HUBERTUS ,  EDART REMI ,  DECKERS DAVID ,  SCHOUMANS NICOLE ,  LYULINA IRINA

IPC: G03F7/20 ,  H01L21/68