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1.发明专利Optoelectronic semiconductor chip, optoelectronic module, and method for producing optoelectronic semiconductor chip 审中-公开光电子半导体芯片，光电模块和生产光电半导体芯片的方法
公开(公告)号：JP2013009013A
公开(公告)日：2013-01-10
申请号：JP2012224564
申请日：2012-10-09
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ADRIAN AVRAMESCU , HAERLE VOLKER , HOEPPEL LUTZ , MATIAS PETER , SABATHIL MATTHIAS , STRAUS UWE
CPC classification number: H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip having improved efficiency.SOLUTION: An optoelectronic semiconductor chip comprises the following sequence of plural regions in a growth direction of the semiconductor chip: a p-doped barrier layer for an active region; the active region, which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor; and an n-doped barrier layer for the active region. The active region comprises a quantum well structure for generating radiation, and at least one further quantum well structure which is not provided for generating radiation and which is disposed upstream of the quantum well structure provided for generating radiation, as seen in the growth direction.
Abstract translation: 要解决的问题：提供具有提高的效率的光电半导体芯片。 解决方案：光电子半导体芯片包括在半导体芯片的生长方向上的多个区域的以下序列：用于有源区的p掺杂阻挡层; 所述活性区域适于产生电磁辐射，所述有源区域基于六方晶系化合物半导体; 和用于有源区的n掺杂阻挡层。 有源区包括用于产生辐射的量子阱结构，以及至少一个另外的量子阱结构，其不提供用于产生辐射，并且设置在量子阱结构的上游，用于产生辐射，如沿生长方向所示。 版权所有（C）2013，JPO＆INPIT
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公开(公告)号：KR20180051667A
公开(公告)日：2018-05-16
申请号：KR20187012757
申请日：2011-05-26
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HOEPPEL LUTZ , VON MALM NORWIN
CPC classification number: H01L33/46 , H01L27/0248 , H01L29/861 , H01L31/0224 , H01L31/02327 , H01L31/186 , H01L33/0079 , H01L33/20 , H01L33/382 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , Y02P70/521 , H01L2924/00
Abstract: 본발명은광전자반도체칩의제조방법에관한것으로, 상기방법은하기단계들: n-전도층(2)을제공하는단계, 상기 n-전도층(2) 위에 p-전도층(4)을배치하는단계, 상기 p-전도층(4) 위에금속층시퀀스(5)를배치하는단계, 상기 p-전도층(4)으로부터멀리떨어진상기금속층시퀀스(5) 측면에마스크(6)를배치하는단계, 상기마스크(6)를사용하여상기금속층시퀀스(5)를부분적으로제거하고상기 p-전도층(4)을노출시키는단계, 그리고상기마스크(6)를사용하여상기 p-전도층(4)의노출된영역들(4a)을상기 n-전도층(2)에이르기까지부분적으로중성화하거나제거하는단계를포함하며, 이때상기금속층시퀀스(5)는적어도하나의미러층(51) 및적어도하나의장벽층(52)을포함하며, 상기금속층시퀀스(5)의미러층(52)은상기 p-전도층(4)을향해있다.
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公开(公告)号：JP2008072126A
公开(公告)日：2008-03-27
申请号：JP2007239993
申请日：2007-09-14
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ALBRECHT TONY , BRUDERL GEORG , HAERLE VOLKER , HOEPPEL LUTZ , STRASSBURG MARTIN
CPC classification number: H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic semiconductor chip capable of extremely effectively operating the chip, and manufacturing at an extremely economical cost. SOLUTION: The electronics semiconductor chip is formed of a growth substrate (1) equipped with a structured growing surface (2) having a lot of protrudes (4) and recesses (3), and an array of active layers (5) deposited on the growing surface (2). COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供能够非常有效地操作芯片的光电子半导体芯片，并且以非常经济的成本制造。 解决方案：电子半导体芯片由配备有具有大量突起（4）和凹部（3）的结构化生长表面（2）的生长衬底（1）和活性层（5）阵列形成， 沉积在生长表面（2）上。 版权所有（C）2008，JPO＆INPIT
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4.发明申请LIGHT-EMITTING DIODE CHIP WITH A METAL REFLECTIVE LAYER, THROUGH CONTACT, TUNNEL CONTACT AND A CHARGE CARRIER CONTACT 审中-公开LEDS芯片金属镜层，通过，隧道接触和承载器水库
公开(公告)号：WO2008089728A3
公开(公告)日：2008-11-06
申请号：PCT/DE2008000081
申请日：2008-01-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , SABATHIL MATTHIAS , HOEPPEL LUTZ , EICHLER CHRISTOPH , ENGL KARL , PETER MATTHIAS , STRASSBURG MARTIN
Inventor： SABATHIL MATTHIAS , HOEPPEL LUTZ , EICHLER CHRISTOPH , ENGL KARL , PETER MATTHIAS , STRASSBURG MARTIN
CPC classification number: H01L33/382 , H01L33/145 , H01L33/22 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/00
Abstract: The invention relates to a light-emitting diode chip comprising a series of layers (10) provided with at least one n-type conductivity layer. Said light-emitting diode chip comprises a reflective layer (5) that is connected in a conductive manner to the n-type conductivity layer (31). At least one transparent dielectric layer (4) is arranged between the n-type conductivity layer and the reflective layer.
Abstract translation: 公开了一种具有层序列（10），其具有至少一个n型层的发光二极管芯片。 LED芯片包括一个相关联的反射镜层（5）上传导地连接到n型层（31）。 n型层和该反射层之间包括至少一个透明的介电层（4）被布置。
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5.发明申请METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT, AND LIGHT-EMITTING SEMICONDUCTOR COMPONENT 审中-公开用于生产发光半导体元器件与发光半导体元件
公开(公告)号：WO2012140050A3
公开(公告)日：2013-01-31
申请号：PCT/EP2012056536
申请日：2012-04-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , ENGL KARL , BAISL RICHARD , SCHLENKER TILMAN , HOEPPEL LUTZ , TAEGER SEBASTIAN , GAERTNER CHRISTIAN
Inventor： ENGL KARL , BAISL RICHARD , SCHLENKER TILMAN , HOEPPEL LUTZ , TAEGER SEBASTIAN , GAERTNER CHRISTIAN
CPC classification number: H01L33/52 , H01L33/44 , H01L33/60 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2933/0025 , H01L2924/00014
Abstract: A method for producing a light-emitting semiconductor component is specified, wherein a light-emitting semiconductor chip (2) is arranged on a mounting area (10) of a carrier (1), wherein the semiconductor chip (2) is electrically connected to electrical contact regions (11, 12) on the mounting area (10), and wherein an encapsulation layer (3) is applied to the semiconductor chip (2) by means of atomic layer deposition, wherein all surfaces of the semiconductor chip (2) which are free after mounting and electrical connection are covered with an encapsulation layer (3). Furthermore, a light-emitting semiconductor component is specified.
Abstract translation: 提供了一种在其上的载体（1）的安装面（10）的发光半导体芯片（2）被布置成一种制造半导体发光器件的方法，其中所述半导体芯片（2）的电接触区（11，12） 在安装表面上（10）电连接，并且其中封装层（3）通过将半导体芯片（2），其中所有的自由组装后并用封装层的半导体芯片（2）的电连接的表面上的原子层沉积来施加（3） 都包括在内。 此外，发光半导体装置。
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Patent Agency Ranking
公开(公告)号：DE112015005232A5
公开(公告)日：2017-09-28
申请号：DE112015005232
申请日：2015-10-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HOEPPEL LUTZ , MALM NORWIN VON
IPC: H01L33/38
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公开(公告)号：DE102012218457A1
公开(公告)日：2014-04-10
申请号：DE102012218457
申请日：2012-10-10
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： MOOSBURGER JUERGEN , MALM NORWIN VON , HOEPPEL LUTZ
Abstract: Ein optoelektronisches Bauelement umfasst einen optoelektronischen Halbleiterchip mit einer ersten Oberfläche, an der ein erster elektrischer Kontakt und ein zweiter elektrischer Kontakt angeordnet sind. Die erste Oberfläche grenzt an einen Formkörper an. Ein erster Stift und ein zweiter Stift sind in den Formkörper eingebettet und elektrisch leitend mit dem ersten Kontakt und dem zweiten Kontakt verbunden. Eine Schutzdiode ist in den Formkörper eingebettet und elektrisch leitend mit dem ersten Kontakt und dem zweiten Kontakt verbunden.
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公开(公告)号：DE102009033686A1
公开(公告)日：2011-01-20
申请号：DE102009033686
申请日：2009-07-17
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HOEPPEL LUTZ , MALM NORWIN VON
Abstract: In mindestens einer Ausführungsform des optoelektronischen Halbleiterbauteils (1) beinhaltet dieses einen Träger (2) und mindestens eine Halbleiterschichtenfolge (3). Die Halbleiterschichtenfolge (3) weist zumindest eine aktive Schicht (30) auf. Die Halbleiterschichtenfolge (3) ist ferner an dem Träger (2) angebracht. Weiterhin beinhaltet das Halbleiterbauteil (1) einen Metallspiegel (4), der sich zwischen dem Träger (2) und der Halbleiterschichtenfolge (3) befindet. Der Träger (2) und die Halbleiterschichtenfolge (3) überragen den Metallspiegel (4) in lateraler Richtung. Außerdem ist der Metallspiegel (4) in lateraler Richtung unmittelbar von einer strahlungsdurchlässigen und elektrisch isolierenden Verkapselungsschicht (5) umgeben.
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公开(公告)号：DE102008052405A1
公开(公告)日：2010-04-22
申请号：DE102008052405
申请日：2008-10-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STRASBURG MARTIN , HOEPPEL LUTZ , PETER MATTHIAS , ZEHNDER ULRICH , TAKI TETSUYA , LEBER ANDREAS , BUTENDEICH RAINER , BAUER THOMAS
Abstract: An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦̸x≦̸1, 0≦̸y≦̸1 and x+y≦̸1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
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公开(公告)号：DE102008035110A1
公开(公告)日：2010-02-11
申请号：DE102008035110
申请日：2008-07-28
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HOEPPEL LUTZ , SABATHIL MATTHIAS
IPC: H01L33/42
Abstract: A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).
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