公开(公告)号：ITTO20120682A1

公开(公告)日：2014-02-01

申请号：ITTO20120682

申请日：2012-07-31

Applicant: ST MICROELECTRONICS PVT LTD ,  ST MICROELECTRONICS SRL

Inventor： DE SANTIS FABIO ,  LAL ABHISHEK ,  PASOTTI MARCO

公开(公告)号：JPH11273374A

公开(公告)日：1999-10-08

申请号：JP1407899

申请日：1999-01-22

Applicant: St Microelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル

Inventor： PASOTTI MARCO ,  CANEGALLO ROBERTO ,  CHIOFFI ERNESTINA ,  GOZZINI GIOVANNI ,  LHERMET FRANK ,  ROLANDI PIERLUIGI

IPC: G11C16/02 ,  G11C11/56 ,  G11C16/16 ,  G11C16/34 ,  G11C27/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: G11C16/3409 ,  G11C11/56 ,  G11C11/5621 ,  G11C11/5635 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3445 ,  G11C27/005

Abstract: PROBLEM TO BE SOLVED: To provide a controlled erasing method in a flash EEPROM device which does not require structural change of memory. SOLUTION: A controlled erasing method comprises at least a step (40) of supplying at least one erase pulse to cell of memory array, a step of comparing a threshold value voltage of cell erased with a certain lower threshold value, a step of performing selectively soft programming to the erased cell having the threshold value voltage lower than the lower threshold value voltage and a step (42) of verifying that the erased cell has the threshold value higher than the lower threshold value. When the erased cells of the predetermined number, which is at least one, have the threshold value higher than the first threshold value, only one erase pulse is given to all cells (44), and the selective soft programming and verify step are repeated.

Abstract translation: 要解决的问题：在不需要结构性改变存储器的快闪EEPROM装置中提供受控的擦除方法。 解决方案：受控擦除方法至少包括向存储器阵列的单元提供至少一个擦除脉冲的步骤（40），将擦除的单元的阈值电压与某个较低阈值进行比较的步骤，选择性地执行的步骤 对具有低于下阈值电压的阈值电压的擦除单元进行软编程;以及验证擦除单元具有高于下阈值的阈值的步骤（42）。 当预定数量（至少为1）的擦除单元具有高于第一阈值的阈值时，仅向所有单元（44）提供一个擦除脉冲，并重复选择性软编程和验证步骤。

公开(公告)号：DE60041823D1

公开(公告)日：2009-04-30

申请号：DE60041823

申请日：2000-12-29

Applicant: ST MICROELECTRONICS SRL

Inventor： GASTALDI ROBERTO ,  LO GIUDICE GIANBATTISTA ,  PASOTTI MARCO ,  PIO FEDERICO

IPC: G11C16/10

公开(公告)号：DE60134870D1

公开(公告)日：2008-08-28

申请号：DE60134870

申请日：2001-12-28

Applicant: ST MICROELECTRONICS SRL

Inventor： DE SANDRE GUIDO ,  POLES MARCO ,  IEZZI DAVID ,  PASOTTI MARCO

IPC: G11C11/56

Abstract: The invention relates to a programming method of a multilevel memory cell able to store a plurality of bits in a plurality of levels (N), the method comprising at least a step of writing a logic value in the multilevel memory cell by setting one of the programming levels (LA) thereof, these levels being included in the plurality of levels (N), with respect to a reference level (LR) according to the symbol to be written and to a previous programming level. The writing step is repeated until a highest possible value (Lmax) for the levels (LS, LR) is reached. The invention relates also to a multilevel memory device comprising a plurality of multilevel memory cells organised into sectors, split into a plurality of data units (UD) whereon a programming operation is performed in parallel according to the method of the invention.

公开(公告)号：DE60221140T2

公开(公告)日：2008-03-20

申请号：DE60221140

申请日：2002-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  DE SANDRE GUIDO ,  IEZZI DAVID ,  MUZZI GILBERTO ,  POLES MARCO

IPC: G11C5/14 ,  G06F1/26 ,  G11C16/30 ,  H02M3/07

公开(公告)号：DE60221140D1

公开(公告)日：2007-08-23

申请号：DE60221140

申请日：2002-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  DE SANDRE GUIDO ,  IEZZI DAVID ,  MUZZI GILBERTO ,  POLES MARCO

IPC: G11C5/14 ,  G06F1/26 ,  G11C16/30 ,  H02M3/07

公开(公告)号：DE69828966D1

公开(公告)日：2005-03-17

申请号：DE69828966

申请日：1998-09-15

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  LHERMET FRANK ,  ROLANDI PIER LUIGI

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/06

Abstract: The method includes restoring the charge lost from memory cells, such as to restore the original voltage levels, within a time equivalent to the retention time. The decision concerning when the memory is to be restored is taken for example when the memory is switched on, based on the time elapsed since the previous programming/restoration, or based on the difference between the present threshold voltage of the reference cells and the original threshold voltage of the (suitably stored) reference cells, or when predetermined operating conditions occur. This makes it possible to prolong the life of nonvolatile memories, in particular of multilevel type, wherein the retention time decreases as the number of levels (bits/cell) is increased.

公开(公告)号：DE69824386D1

公开(公告)日：2004-07-15

申请号：DE69824386

申请日：1998-01-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  CANEGALLO ROBERTO ,  CHIOFFI ERNESTINA ,  GUAITINI GIOVANNI ,  LHERMET FRANK ,  ROLANDI PIERLUIGI

IPC: G11C16/02 ,  G11C11/56 ,  G11C16/16 ,  G11C16/34 ,  G11C27/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/00 ,  G11C16/06

公开(公告)号：DE60009031D1

公开(公告)日：2004-04-22

申请号：DE60009031

申请日：2000-03-28

Applicant: ST MICROELECTRONICS SRL

Inventor： ROCCHI ALESSANDRO ,  BISIO MARCO ,  PASOTTI MARCO ,  ROLANDI PIER LUIGI

IPC: G06F12/02 ,  G06F3/06

公开(公告)号：DE60102203D1

公开(公告)日：2004-04-08

申请号：DE60102203

申请日：2001-12-13

Applicant: ST MICROELECTRONICS SRL

Inventor： DE SANDRE GUIDO ,  PASOTTI MARCO ,  ROLANDI PIER LUIGI ,  GUAITINI GIOVANI ,  IEZZI DAVID ,  POLES MARCO

IPC: G11C11/56

Abstract: It is described a programming method for a multilevel memory cell able to store a plurality of bits in a plurality of levels. The method comprises the phases of: initially programming a cell threshold value to a first set of levels [0;(m-1)] being m a submultiple of the plurality of levels of the multilevel cell; reprogramming without erasing another set of levels [m;(2m-1)] containing the same number m of levels as the first set; reiterating the reprogramming without erasing phase until the levels of the multilevel cell are exhausted. It is also described a multilevel memory device of the type comprising a plurality of multilevel memory cells organized into sectors, the sectors being themselves split into a plurality of data units wherein a data updating operation is performed in parallel, the data units being programmed by means of the programming method.