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公开(公告)号：CN102017107B
公开(公告)日：2013-05-08
申请号：CN200980115918.8
申请日：2009-05-22
Applicant: 松下电器产业株式会社
CPC classification number: B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
Abstract: 本发明的接合结构，对构成电子器件的电子元件(12)和构成该电子器件的电极(14)进行接合。接合结构包括：钎焊层，其含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；设置在钎焊层和电极之间的镍层；设置在镍层和钎焊层之间的阻挡层。在此，通过钎焊层接合电子元件和电极之后，阻挡层的平均厚度为0.5～4.5μm。
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Patent Agency Ranking
公开(公告)号：CN102132390A
公开(公告)日：2011-07-20
申请号：CN201080002443.4
申请日：2010-06-17
Applicant: 松下电器产业株式会社
IPC: H01L21/52 , B23K1/00 , B23K35/26 , B23K35/363 , C22C12/00
CPC classification number: C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明是例如具有接合结构体的半导体零部件(100)，该接合结构体具备半导体元件(102)、与半导体元件(102)对置的电极(103)、连接半导体元件(102)与电极(103)的以Bi为主成分的接合材料，通过接合材料(104)含有碳化合物，与现在相比可以降低接合部被半导体元件和电极的线膨胀系数之差破坏的程度。可以提供由以Bi为主成分的接合材料将半导体元件和电极接合的接合结构体等，该接合结构体与现有产品相比可以提高接合部的可靠性。
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公开(公告)号：CN102132390B
公开(公告)日：2013-03-20
申请号：CN201080002443.4
申请日：2010-06-17
Applicant: 松下电器产业株式会社
IPC: H01L21/52 , B23K1/00 , B23K35/26 , B23K35/363 , C22C12/00
CPC classification number: C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明是例如具有接合结构体的半导体零部件(100)，该接合结构体具备半导体元件(102)、与半导体元件(102)对置的电极(103)、连接半导体元件(102)与电极(103)的以Bi为主成分的接合材料，通过接合材料(104)含有碳化合物，与现在相比可以降低接合部被半导体元件和电极的线膨胀系数之差破坏的程度。可以提供由以Bi为主成分的接合材料将半导体元件和电极接合的接合结构体等，该接合结构体与现有产品相比可以提高接合部的可靠性。
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公开(公告)号：CN102292803A
公开(公告)日：2011-12-21
申请号：CN201080005565.9
申请日：2010-04-22
Applicant: 松下电器产业株式会社
CPC classification number: H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明的目的在于提供一种既确保半导体元件与支承板之间有足够的接合强度、又提高来自半导体元件的发热向支承板的散热性的半导体装置。本发明所涉及的半导体装置包括：支承板；形成于所述支承板上的电极表面处理层；半导体元件；以及焊料，该焊料在以Bi为主成分的第一金属的内部含有熔点高于所述第一金属的第二金属的粒子，并将所述电极表面处理层和所述半导体元件进行接合，在所述焊料的与所述半导体元件的中央部相对应的区域，所述第二金属的组分比率高于所述第一金属，在与所述中央部相对应的区域的外侧的区域，所述第一金属的组分比率高于所述第二金属，在与所述中央部相对应的区域内，所述第二金属的组分比率为83.8原子％以上。
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公开(公告)号：CN102163564A
公开(公告)日：2011-08-24
申请号：CN201110026480.5
申请日：2011-01-18
Applicant: 松下电器产业株式会社
IPC: H01L21/60 , H01L23/488
CPC classification number: H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本发明涉及接合结构体及接合结构体的制造方法。本发明非常希望实现功率半导体模块的高输出功率化，需要进一步提高接合部的耐热性，使得即使温度上升，用于将半导体元件与电极接合的接合部也不会熔融。本发明是一种接合结构体(1100)的制造方法，该方法是由半导体元件(1110)通过接合部(1130)与电极(1120)接合而成的接合结构体(1100)的制造方法，其特征在于，包括：焊锡球载放工序，该焊锡球载放工序中，将用Ni镀层(1231)覆盖Bi球(1232)的表面而成的焊锡球(1230)载放于已加热至Bi的熔点以上的温度的电极(1120)上；接合材料形成工序，该接合材料形成工序中，将焊锡球(1230)按压于经加热的电极(1120)上，使Ni镀层(1231)破碎，使熔融状态的Bi在经加热的电极(1120)的表面扩散，形成含有由Bi和Ni组成的Bi系金属互化物(1131)的接合材料(1130’)；以及半导体元件载放工序，该半导体元件载放工序中，将半导体元件(1110)载放于接合材料(1130’)上。
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公开(公告)号：CN102017107A
公开(公告)日：2011-04-13
申请号：CN200980115918.8
申请日：2009-05-22
Applicant: 松下电器产业株式会社
CPC classification number: B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2101/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
Abstract: 本发明的接合结构，对构成电子器件的电子元件(12)和构成该电子器件的电极(14)进行接合。接合结构包括：钎焊层，其含有0.2～6重量％的铜、0.02～0.2重量％的锗、以及93.8～99.78重量％的铋；设置在钎焊层和电极之间的镍层；设置在镍层和钎焊层之间的阻挡层。在此，通过钎焊层接合电子元件和电极之后，阻挡层的平均厚度为0.5～4.5μm。
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