-
公开(公告)号：US20180190882A1
公开(公告)日：2018-07-05
申请号：US15908762
申请日：2018-02-28
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Kuan-Yung Liao , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/505 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/58
Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.
-
公开(公告)号：US20180190627A1
公开(公告)日：2018-07-05
申请号：US15896116
申请日：2018-02-14
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Sie-Jhan Wu , Jing-En Huang
IPC: H01L25/075 , H01L33/56 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/52 , H01L33/58 , H01L33/62 , H01L33/54 , H01L33/00
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. The illuminator generates an optical energy by way of electroluminescence, and the packaging sealant is formed on a part of a surface of the illuminator. The electrode unit includes a first electrode and a second electrode respectively formed on the surface of the illuminator on which no packaging sealant is formed. The insulating unit is formed on the surface of the light-emitting unit and includes a first insulating layer protruded between the first electrode and the second electrode. When the light-emitting device of the invention is electrically connected to an external circuit board using solder, the insulating unit effectively separates the elements to avoid the elements being short-circuited by the solder overflowing.
-
93.发明授权公开(公告)号：US09786813B2
公开(公告)日：2017-10-10
申请号：US15423595
申请日：2017-02-03
Applicant: Genesis Photonics Inc.
Inventor： Yi-Fan Li , Jing-En Huang , Sie-Jhan Wu
CPC classification number: H01L33/22 , H01L33/005 , H01L33/0095 , H01L33/06 , H01L33/486 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091
Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.
-
公开(公告)号：US09728672B2
公开(公告)日：2017-08-08
申请号：US15045440
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Jing-En Huang
IPC: H01L21/683 , H01L23/00 , H01L21/78 , H01L33/00
CPC classification number: H01L33/0079 , H01L21/6835 , H01L21/6836 , H01L33/0075 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68381
Abstract: A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting table and is processed such that a substrate of the LED wafer has a thickness smaller than or equal to 100 μm. A fixing piece is pasted on the LED wafer surface. The LED wafer is detached from the crafting table. The LED wafer together with the fixing piece are cut and broken, such that the LED wafer forms a plurality of LEDs. The fixing piece is removed. Before the LED wafer is detached from the crafting table, the fixing piece is pasted on the LED wafer to provide a supporting force to the LED wafer to maintain the flatness of the wafer and avoid the wafer being warped or the substrate being broken or damaged, such that product quality and reliability can be improved.
-
95.发明申请公开(公告)号：US20170148952A1
公开(公告)日：2017-05-25
申请号：US15423595
申请日：2017-02-03
Applicant: Genesis Photonics Inc.
Inventor： Yi-Fan Li , Jing-En Huang , Sie-Jhan Wu
CPC classification number: H01L33/22 , H01L33/005 , H01L33/0095 , H01L33/06 , H01L33/486 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091
Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.
-
Patent Agency Ranking
公开(公告)号：US09577154B2
公开(公告)日：2017-02-21
申请号：US14535333
申请日：2014-11-07
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Fan Li , Chih-Ling Wu , Yi-Ru Huang , Jing-En Huang , Shao-Ying Ting
Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.
Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。
-
公开(公告)号：US20160329461A1
公开(公告)日：2016-11-10
申请号：US15135573
申请日：2016-04-22
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。
-
公开(公告)号：US20160307880A1
公开(公告)日：2016-10-20
申请号：US15131143
申请日：2016-04-18
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L25/075 , H01L33/48 , H01L33/38 , H01L33/62 , H01L33/54
CPC classification number: H01L25/0753 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/16145 , H01L2224/4813 , H01L2224/48464 , H01L2224/73265
Abstract: A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. The substrate module includes a substrate, a first conductive layer, an insulation layer and a second conductive layer. The substrate has an upper surface. The insulation layer is formed on the upper surface of the substrate, separates the substrate and the first conductive layer and has an opening. The second conductive layer connects to the upper surface of the substrate and is separated from the first conductive layer. The light-emitting component is disposed on the substrate module and electrically connected to the first conductive layer and the second conductive layer.
Abstract translation: 提供了一种发光装置和使用其的发光模块。 发光装置包括基板模块和发光部件。 衬底模块包括衬底，第一导电层，绝缘层和第二导电层。 基板具有上表面。 绝缘层形成在基板的上表面上，分离基板和第一导电层并具有开口。 第二导电层连接到衬底的上表面并与第一导电层分离。 发光部件设置在基板模块上并电连接到第一导电层和第二导电层。
-
公开(公告)号：US20160293809A1
公开(公告)日：2016-10-06
申请号：US15175019
申请日：2016-06-06
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Kuan-Yung Liao , Yi-Ru Huang , Yu-Yun Lo
CPC classification number: H01L33/505 , H01L33/486 , H01L33/50 , H01L33/54 , H01L33/58
Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.
-
公开(公告)号：US20160247974A1
公开(公告)日：2016-08-25
申请号：US15045279
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting
Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
Abstract translation: 包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极和布拉格反射器结构的发光二极管。 发光层被配置为发射光束并且位于第一类型半导体层和第二类型半导体层之间。 光束在发光波长范围内具有峰值波长。 第一型半导体层，发光层和第二类型半导体层位于布拉格反射器结构的同一侧。 至少覆盖0.8X〜1.8Xnm的反射波长范围内，布拉格反射体结构的反射率大于或等于95％，X是发光波长范围的峰值波长。
-
-
-
-
-
-
-
-
-
Search Results
110
records
(took 0.026 seconds)
