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    Deposit removal method
    91.
    发明授权
    Deposit removal method 有权
    存款清除方法

    公开(公告)号：US09126229B2

    公开(公告)日：2015-09-08

    申请号：US14116952

    申请日：2012-05-10

    Applicant: Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

    Inventor： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

    IPC: B05D3/14 ,  H01L21/02 ,  H01L21/311

    CPC classification number: B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

    Abstract: A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

    Abstract translation: 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

    Method of forming organic film, and organic film, nozzle plate, inkjet head and electronic device
    94.
    发明授权
    Method of forming organic film, and organic film, nozzle plate, inkjet head and electronic device 有权
    形成有机膜的方法，有机膜，喷嘴板，喷墨头和电子装置

    公开(公告)号：US08475885B2

    公开(公告)日：2013-07-02

    申请号：US12893948

    申请日：2010-09-29

    Applicant: Hiroki Uchiyama

    Inventor： Hiroki Uchiyama

    IPC: C08J7/06

    CPC classification number: B41J2/161 ,  B05D1/62 ,  B05D3/145 ,  B05D7/54 ,  B41J2/1606 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14459 ,  B41J2202/20 ,  Y10T428/24355

    Abstract: The method of forming an organic film, includes: an organic film formation step of forming an organic film on a surface of a base member using a silane coupling agent; and a post-processing step including a water vapor introduction step of holding the base member on which the organic film has been formed in an atmosphere containing at least water vapor, and a dehydration processing step of holding the base member in an atmosphere having a smaller presence of water vapor than the atmosphere in the water vapor introduction step.

    Abstract translation: 形成有机膜的方法包括：使用硅烷偶联剂在基材的表面上形成有机膜的有机膜形成步骤; 以及后处理步骤，包括在至少含有水蒸气的气氛中保持其上形成有机膜的基底部件的水蒸气引入步骤，以及将基底部件保持在较小的气氛中的脱水处理步骤 在水蒸气引入步骤中存在水蒸汽。

    Selective parylene coating for cardiac pacemaker electrodes
    95.
    发明授权
    Selective parylene coating for cardiac pacemaker electrodes 有权
    心脏起搏器电极的选择性聚对二甲苯涂层

    公开(公告)号：US08355802B2

    公开(公告)日：2013-01-15

    申请号：US12486006

    申请日：2009-06-17

    Applicant: Oliver Keitel ,  Frank Krüger ,  Michael Pönitz

    Inventor： Oliver Keitel ,  Frank Krüger ,  Michael Pönitz

    IPC: A61N1/05

    CPC classification number: A61N1/0565 ,  A61N1/0573 ,  B05D1/60 ,  B05D3/145

    Abstract: A stimulation electrode is produced having a porous film layer and being partially coated with an insulating parylene (polyparaxylylene) film, whose insulating film has a dielectric breakdown voltage of greater than 100 V. Parylene is deposited on the entire surface of a porous film coating and then partially removed again by plasma. After the partial removal of the parylene, this porous film still has a capacitance of greater than 15 mF/cm2 in a physiological NaCl solution at a frequency of 0.1 Hz. For the stimulation electrode, the transition from the insulating film to the porous film is formed so that the film thickness of the parylene film decreases continuously. In this way, a stimulation electrode having a porous film layer and being partially coated with an insulating parylene film is provided, whose electrode on the non-insulating parylene film-coated surface has a capacitance of greater than 15 mF/cm2 in a physiological NaCl solution at a frequency of 0.1 Hz and whose insulating film advantageously has a dielectric breakdown voltage of greater than 100 V.

    Abstract translation: 产生具有多孔膜层并部分涂覆绝缘聚对二甲苯（聚对二甲苯）膜的刺激电极，其绝缘膜具有大于100V的绝缘击穿电压。聚对二甲苯沉积在多孔膜涂层的整个表面上， 然后再次通过等离子体去除。 部分去除聚对二甲苯之后，该多孔膜在0.1Hz的频率下在生理NaCl溶液中仍然具有大于15mF / cm 2的电容。 对于刺激电极，形成从绝缘膜到多孔膜的过渡，使得聚对二甲苯膜的膜厚度连续降低。 以这种方式，提供了具有多孔膜层并部分地涂有绝缘聚对二甲苯膜的刺激电极，其非绝缘聚对二甲苯膜涂覆表面上的电极在生理NaCl中具有大于15mF / cm 2的电容 溶液，其频率为0.1Hz，其绝缘膜有利地具有大于100V的介电击穿电压。

    Method and Apparatus for Surface Treatment of Materials Utilizing Multiple Combined Energy Sources
    96.
    发明申请
    Method and Apparatus for Surface Treatment of Materials Utilizing Multiple Combined Energy Sources 有权
    使用多种组合能源的材料表面处理方法和装置

    公开(公告)号：US20130001204A1

    公开(公告)日：2013-01-03

    申请号：US13536257

    申请日：2012-06-28

    Applicant: Pravin Mistry ,  Jahr Turchan

    Inventor： Pravin Mistry ,  Jahr Turchan

    IPC: B23K10/00 ,  B05C9/12 ,  B05D3/10

    CPC classification number: D06M10/025 ,  B05D1/60 ,  B05D3/06 ,  B05D3/142 ,  B05D3/145 ,  D06M10/005 ,  H01H1/24 ,  H05H1/34

    Abstract: Material treatment is effected in a treatment region by at least two energy sources, such as (i) an atmospheric pressure plasma and (ii) an ultraviolet laser directed into the plasma and optionally onto the material being treated. Precursor materials may be dispensed before, and finishing material may be dispensed after treatment. Electrodes for generating the plasma may comprise two spaced-apart rollers. Nip rollers adjacent the electrode rollers define a semi-airtight cavity, and may have a metallic outer layer.

    Abstract translation: 材料处理在处理区域通过至少两种能量源进行，例如（i）大气压等离子体和（ii）引导到等离子体中的紫外线激光和任选地被引导到待处理的材料上。 前体材料可以在之前分配，并且整理材料可以在处理后分配。 用于产生等离子体的电极可以包括两个间隔开的辊。 邻近电极辊的压辊定义了半气密腔，并且可以具有金属外层。

    METHOD FOR PRODUCING HYPERTHERMAL HYDROGEN MOLECULES AND USING SAME FOR SELECTIVELY BREAKING C-H AND/OR Si-H BONDS OF MOLECULES AT OR ON SUBSTRATE SURFACES
    97.
    发明申请
    METHOD FOR PRODUCING HYPERTHERMAL HYDROGEN MOLECULES AND USING SAME FOR SELECTIVELY BREAKING C-H AND/OR Si-H BONDS OF MOLECULES AT OR ON SUBSTRATE SURFACES 有权
    用于生产高级氢分子的方法，并且使用它们在基底表面上或在基底表面上选择性地断裂C-H和/或Si-H分子

    公开(公告)号：US20120061558A1

    公开(公告)日：2012-03-15

    申请号：US13255038

    申请日：2010-03-03

    Applicant: Leo W.M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

    Inventor： Leo W.M. Lau ,  De-Quan Yang ,  Tomas Trebicky ,  Heng Yong Nie

    IPC: H05H3/02

    CPC classification number: H05H3/02 ,  B05D3/007 ,  B05D3/068 ,  B05D3/145 ,  C01B3/00 ,  C01B3/02 ,  Y02E60/324

    Abstract: A method for producing hyperthermal molecular hydrogen is disclosed and use of same for selectively breaking C—H or Si—H bonds without breaking other bonds are disclosed. A hydrogen plasma is maintained and protons are extracted with an electric field to accelerate them to an appropriate kinetic energy. The protons enter into a drift zone to collide with molecular hydrogen in gas phase. The cascades of collisions produce a high flux of hyperthermal molecular hydrogen with a flux many times larger than the flux of protons extracted from the hydrogen plasma. The nominal flux ratio of hyperthermal molecular hydrogen to proton is controlled by the hydrogen pressure in the drift zone, and by the length of the drift zone. The extraction energy of the protons is shared by these hyperthermal molecules so that average energy of the hyperthermal molecular hydrogen is controlled by extraction energy of the protons and the nominal flux ratio. Since the hyperthermal molecular hydrogen projectiles do not carry any electrical charge, the flux of hyperthermal hydrogen can be used to engineer surface modification of both electrical insulating products and conductive products. When this method of generating a high flux of hyperthermal molecular hydrogen is applied to bombard organic precursor molecules (or silicone, or silane molecules) with desirable chemical functionality/functionalities on a substrate, the C—H or Si—H bonds are thus cleaved preferentially due to the kinematic selectivity of energy deposition from the hyperthermal hydrogen projectiles to the hydrogen atoms in the precursor molecules. The induced cross-linking reactions produce a stable molecular layer having a controllable degree of cross-linking and retaining the desirable chemical functionality/functionalities of the precursor molecules.

    Abstract translation: 公开了一种制备超热分子氢的方法，并公开了其用于选择性地破坏C-H或Si-H键而不破坏其它键的用途。 维持氢等离子体并用电场提取质子，以将其加速至适当的动能。 质子进入漂移区，与气相中的分子氢碰撞。 级联的碰撞产生高通量的超热分子氢，其通量比从氢等离子体提取的质子通量多大许多倍。 超热分子氢与质子的标称通量比由漂移区中的氢气压力和漂移区的长度来控制。 质子的提取能量由这些超热分子共享，使得超热分子氢的平均能量由质子的提取能量和标称通量比控制。 由于超热分子氢射弹不携带任何电荷，所以超热氢气流可用于工程电绝缘产品和导电产品的表面改性。 当产生高通量的超热分子氢的方法用于轰击在底物上具有理想的化学官能度/功能性的有机前体分子（或硅氧烷或硅烷分子）时，C-H或Si-H键优先被切割 这是由于从超热氢弹体到前体分子中的氢原子的能量沉积的运动选择性。 诱导的交联反应产生具有可控程度的交联并保持前体分子所需的化学官能度/功能的稳定的分子层。

    Method of Forming Organic Film, and Nozzle Plate, Inkjet Head and Electronic Device
    99.
    发明申请
    Method of Forming Organic Film, and Nozzle Plate, Inkjet Head and Electronic Device 有权
    形成有机膜，喷嘴板，喷墨头和电子装置的方法

    公开(公告)号：US20110074881A1

    公开(公告)日：2011-03-31

    申请号：US12893936

    申请日：2010-09-29

    Applicant: Hiroki UCHIYAMA

    Inventor： Hiroki UCHIYAMA

    IPC: B41J2/14 ,  B05D3/06

    CPC classification number: B41J2/161 ,  B05D1/62 ,  B05D3/104 ,  B05D3/142 ,  B05D3/145 ,  B41J2/1606 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14459 ,  B41J2202/20

    Abstract: The method of forming an organic film, includes: a pre-processing step including a plasma treatment step of carrying out plasma treatment to a surface of a base member, and an exposure processing step of exposing the surface of the base member that has undergone the plasma treatment, in an atmosphere containing at least water; and an organic film formation step of thereafter forming an organic film on the surface of the base member using a silane coupling agent.

    Abstract translation: 形成有机膜的方法包括：预处理步骤，包括对基材的表面进行等离子体处理的等离子体处理步骤;以及曝光处理步骤，使已经经历过的 在至少含水的气氛中进行等离子体处理; 以及有机膜形成工序，然后使用硅烷偶联剂在基材的表面上形成有机膜。

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