Abstract:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
Abstract:
The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.
Abstract:
In a charged particle beam device and a specimen holder for the charged particle beam device each of which comprises a mechanism for blowing with a gas at least partially a specimen to be observed, the mechanism includes small flow rate gas spout openings arranged opposed to each other through the specimen with a small distance between the specimen and each of the small flow rate gas spout openings.
Abstract:
Methods and apparatus are disclosed for forming a sample of an object, extracting the sample from the object, and subjecting this sample to microanalysis including surface analysis and electron transparency analysis in a vacuum chamber. In some embodiments, a method is provided for imaging an object cross section surface of an extracted sample. Optionally, the sample is iteratively thinned and imaged within the vacuum chamber. In some embodiments, the sample is situated on a sample support including an optional aperture. Optionally, the sample is situated on a surface of the sample support such that the object cross section surface is substantially parallel to the surface of the sample support. Once mounted on the sample support, the sample is either subjected to microanalysis in the vacuum chamber, or loaded onto a loading station. In some embodiments, the sample is imaged with an electron beam substantially normally incident to the object cross section surface.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
A specimen holding device has a plurality of electrodes, and a moving mechanism for moving upward and downward a part of the plurality of electrodes. Further, the moving mechanism moves the part of the plurality of electrodes downward to evacuate from a path through which a specimen is introduced. Further, the specimen holding device has a positioning member for the specimen so that the specimen is positioned after being mounted.
Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
Abstract:
A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.