Abstract:
[Problem] To provide a composite cable, which, as an entire composite cable, ensures a stable quality while being flexible and manipulable [Solution] A composite cable having, on the inside of a sheath, a tube and a plurality of cables. When said composite cable is suspended in a hoop shape with the entire composite cable as a cable to be tested, if the maximum value for the inner diameter of said hoop is measured as D1 and the inner diameter of the hoop at a position 100 mm from the top edge of the hoop when the hoop is subjected to a load of 1 kg is measured as D2, the condition D1-D2>70 mm is satisfied. The tube partially or entirely comprises a layer made from porous polytetrafluoroethylene, and if the outer diameter and the inner diameter of the layer of the tube are respectively defined as (D) and (d), the condition (D-d)/D falls within the range of 0.27 to 0.75, and has a predetermined porous structure inside a region obtained by joining the following four points: the two points at which the average crevasse width of the porous structure in said ePTFE has a minimum value of 10.0 μm and a maximum value of 20.0 μm when the ratio (D-d)/D is 0.27, and the two points at which the minimum value is 16.0 μm and the maximum value is 27.0 μm when the ratio (D-d)/D is 0.75.
Abstract:
A metal substrate with insulated vias (MSIV) has a metallic layer with through-holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through-hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices.
Abstract translation:具有绝缘通孔(MSIV)的金属基板具有通过所述层的厚度限定的通孔的金属层,形成在金属层表面的一部分上并延伸以覆盖通孔的内壁的电介质层, 延伸穿过绝缘通孔形成绝缘通孔的导电材料,以及形成在与导电通孔热接触和/或电接触的介电层的一部分上的电路。 电介质层是具有平均晶粒尺寸为500纳米或更小,厚度为0.1至100微米,介电强度大于20KV /毫米-1的等轴晶体结构的电介质纳米陶瓷层,以及导热系数 大于3 W / mK。 这样的MSIV可以用作电子基板来支持诸如电力,微波,光电子,固态照明和热电装置的装置。
Abstract:
A light emitting apparatus includes a substrate, a light emitter mounted on the substrate, and a lens at least partially covering the light emitter, the lens defining a space about the light emitter. A heat sink is attached to the substrate. The heat sink is configured to dissipate heat from the light emitter via the substrate. The substrate includes an opening communicated with the space. A vent passage is at least partially defined between the heat sink and the substrate, the vent passage communicating the opening in the substrate with an exterior of the heat sink.
Abstract:
Printed circuit board assemblies providing fault detection are provided. One example printed circuit board assembly includes a substrate layer. One or more solder pins are located on a rear surface of the substrate layer. The printed circuit board assembly includes a non-conductive layer adjacent to the rear surface of the substrate layer. The printed circuit board assembly includes a conductive layer adjacent to the non-conductive layer. The conductive layer is electrically connected to a ground. The printed circuit board assembly includes a mounting surface. The printed circuit board assembly includes a support layer compressed between the conductive layer and the mounting surface. The support layer applies a mechanical force that presses the conductive layer towards the non-conductive layer.
Abstract:
A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, wheras the amplitude of the negative voltage pulses is galvanostatically controlled.
Abstract:
The invention relates to an electroluminescent lighting device, which is based on an array of standard electroluminescent tiles (D1-Dn) combined with an array of ballast components (R1-Rn) mounted on a carrier board (30) in such a way that the power loss is evenly spread across the whole board area to minimize local electric power in the ballast components. The unavoidable remaining hot spots and electroluminescent tiles are thermally coupled in such a way that the additional thermal load on the electroluminescent emission layer is as symmetric as possible with respect to the self heating of the electroluminescent device. This can be achieved by a combination of properly designed heat spreading and thermal isolation of the electroluminescent and ballast components. Heat spreading is achieved by a properly designed interconnection structure (40) on the carrier board. Different options are proposed to thermally isolate the electroluminescent tiles from the hot spots.
Abstract:
Embodiments of the present disclosure are directed to a circuit board. The circuit board comprises: an aluminum-based substrate; an alumina layer formed on at least one surface of the aluminum-based substrate; and a circuit layer formed on the alumina layer. The alumina layer comprises alumina and an element selected from a group consisting of chromium, nickel, a rare earth metal, and a combination thereof.
Abstract:
The invention relates to a method for connecting a precious metal surface to a polymer, wherein a layer made of 20% to 40% gold and 60% to 80% silver is deposited on a substrate and the silver is subsequently selectively removed in order to produce a nanoporous gold layer. A fluid polymer is applied to the gold layer and cured.
Abstract:
Package assemblies including a die stack and related methods of use. The package assembly includes a substrate with a first surface, a second surface, and a third surface bordering a through-hole extending from the first surface to the second surface. The assembly further includes a die stack, a conductive layer, and a lid. The die stack includes a chip positioned inside the through-hole in the substrate. A section of the conductive layer is disposed on the third surface of the substrate. A portion of the lid is disposed between the first chip and the section of the conductive layer. The conductive layer is configured to be coupled with power, and the lid is configured to be coupled with ground. The portion of the lid may act as a first plate of a capacitor, and the section of the conductive layer may act as a second plate of the capacitor.
Abstract:
Electronic devices may be provided that include mechanical and electronic components. Connectors may be used to interconnect printed circuits and devices mounted to printed circuits. Printed circuits may include rigid printed circuit boards and flexible printed circuit boards. Heat sinks and other thermally conductive structures may be used to remove excess component heat. Structures may also be provided in an electronic device to detect moisture. Integrated circuits and other circuitry may be mounted on a printed circuit board under a radio-frequency shielding can.