公开(公告)号：US6114808A

公开(公告)日：2000-09-05

申请号：US47331

申请日：1998-03-25

Applicant: Masaaki Takahashi

Inventor： Masaaki Takahashi

IPC: H01J23/06 ,  H01J3/02 ,  H01J23/065 ,  H01J25/34 ,  H01J23/04

CPC classification number: H01J23/065 ,  H01J3/021

Abstract: A cold cathode electron gun includes a field emission cathode array type cold cathode for emitting electron beams toward an RF circuit unit of a microwave tube. An annular Wehnelt electrode, a first anode electrode and a second anode electrode are disposed in order from the field emission cathode array type cold cathode side coaxially with the field emission cathode array type cold cathode between the field emission cathode array type cold cathode and the RF circuit unit. The potential Ea1 of the first anode electrode, the potential Ea2 of the second anode electrode and the potential Eb of the RF circuit unit has a relationship of Ea1>Eb>EA2.gtoreq.0 V.

Abstract translation: 冷阴极电子枪包括用于向微波管的RF电路单元发射电子束的场发射阴极阵列型冷阴极。 从场致发射阴极阵列型冷阴极与场发射阴极阵列型冷阴极与射频发射阴极阵列型冷阴极同轴的场致发射阴极阵列型冷阴极侧依次设置环状的Wehnelt电极，第一阳极电极和第二阳极电极 电路单元。 第一阳极电位的电位Ea1，第二阳极电位的电位Ea2和RF电路单元的电位Eb具有Ea1> Eb> EA2> / = 0V的关系。

公开(公告)号：US5523572A

公开(公告)日：1996-06-04

申请号：US410760

申请日：1995-03-27

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01J37/00

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

Abstract translation: 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

公开(公告)号：US5227699A

公开(公告)日：1993-07-13

申请号：US746355

申请日：1991-08-16

Applicant: Heinz H. Busta

Inventor： Heinz H. Busta

IPC: H01J21/06 ,  H01J1/304 ,  H01J3/02 ,  H01J21/10

CPC classification number: H01J21/10 ,  H01J3/021

Abstract: Methods and apparatus for providing signal modulation or control of collector initialized and sustained field emission in field emitter devices without input circuit loading. A special control gate is used to modulate emission with no resultant steady-state emitter-gate current, thus increasing input resistance. The control gate may be well spaced from the emitter tip and the collector because it is not used to initiate and sustain emission from the emitter. This lowers emitter-gate and collector gate capacitances, thereby increasing input reactance for high frequency input signals. The collector-sustained field emission provides a low output resistance with relatively great collector-emitter spacing to provide high output reactance so that the high frequency response is extended.

Abstract translation: 提供信号调制或控制集电极初始化和持续场发射的方法和装置，无需输入电路负载。 特殊的控制栅极用于调制发射，没有产生稳态发射极 - 栅极电流，从而增加输入电阻。 控制栅极可以与发射极尖端和集电极良好地间隔开，因为它不用于启动和维持发射极的发射。 这降低了发射极和集电极栅极电容，从而增加了高频输入信号的输入电抗。 集电极持续场致发射具有较低的输出电阻，具有较高的集电极 - 发射极间隔，以提供高输出电抗，从而延长了高频响应。

公开(公告)号：US5196707A

公开(公告)日：1993-03-23

申请号：US671425

申请日：1991-03-04

Applicant: Mark A. Gesley

Inventor： Mark A. Gesley

IPC: H01J3/02 ,  H01J37/073 ,  H01J37/08 ,  H01J37/12 ,  H01J37/305 ,  H01L21/027

CPC classification number: H01J37/073 ,  H01J3/021 ,  H01J2237/06316

Abstract: A field emission source is used in conjunction with a three element asymmetric lens system to provide an electron gun having greater magnitude beam currents focused on a smaller spot size than has been previously possible for intermediate energy beams. The three element asymmetric lens system has a lower spherical aberration than prior art electrostatic guns and a very low chromatic aberration coefficient, enabling precise focusing of beams with large currents and energy spreads. The electron gun produces high current densities in beam focused on small spot areas, despite the relatively large acceptance angle and energy spread of the source beams.

公开(公告)号：US4910435A

公开(公告)日：1990-03-20

申请号：US222127

申请日：1988-07-20

Applicant: George Wakalopulos

Inventor： George Wakalopulos

IPC: H05H1/48 ,  G21K5/04 ,  H01J3/02 ,  H01J37/073 ,  H01J37/077 ,  H05H7/08

CPC classification number: H01J3/021

Abstract: A wide area electron gun in which an electron beam originates from secondary emission electrons emitted by a target bombarded by ions. A cylindrical main housing has a central region where the secondary emission target is located and auxiliary housings on opposed sides of the target, outside of the main housing, contain low temperature ion plasmas. Ion beams are extracted from peripheral regions of the plasmas and enter narrow ports or slits connecting the auxiliary housings with the main housing. A higher pressure in the auxiliary housings, compared to the main housing, supports ion flow into the main housing. The ion beams have a low angle of incidence to the plane of the target and may be either slightly below or above the target. In the case the beam enters from above the target, the target is segmented, like venetian blinds. The secondary electrons exit the main housing through a foil window such that the electron beam is almost at right angles to the ion beams.

Abstract translation: 一种广泛的电子枪，其中电子束源自由被离子轰击的靶发射的二次发射电子。 圆筒形主壳体具有中心区域，其中二次排放物体位于靶主体外侧的靶的相对侧上的辅助壳体包含低温离子等离子体。 离子束从等离子体的周边区域中抽出，并进入连接辅助壳体与主壳体的窄口或缝隙。 与主壳体相比，辅助壳体中的较高压力支持离子流入主壳体。 离子束具有与靶的平面的低入射角，并且可以略微低于或高于目标。 在光束从目标上方进入的情况下，目标被分割，如百叶帘。 二次电子通过箔窗口离开主壳体，使得电子束几乎与离子束成直角。

公开(公告)号：US4777370A

公开(公告)日：1988-10-11

申请号：US932141

申请日：1986-11-18

Applicant: Daniel Pigache ,  Francois Danel

Inventor： Daniel Pigache ,  Francois Danel

IPC: H01J37/06 ,  H01J3/02 ,  H01J33/00 ,  H01S3/097

CPC classification number: H01S3/09707 ,  H01J3/021 ,  H01J33/00

Abstract: The electron gun comprises an ionization chamber, adjacent to a high voltage chamber. In the wall common the both chambers provision is made for an extraction grid. On the opposite side, the ionization chamber comprises an outlet window for the electrons similar in shape to the extraction grid, and accompanied by a fine metallic foil. The high voltage chamber comprises a cathode brought to a high negative voltage. By giving the two grids the shape of similar parallel strips, a masking effect and a focusing effect are obtained at one and the same time which allows the efficiency of the electron gun to be increased.

Abstract translation: 电子枪包括与高压室相邻的电离室。 在墙壁上共同的是，两室提供用于提取网格。 在相对侧，电离室包括用于形状与提取栅格相似的电子的出口窗口，并且伴随有细金属箔。 高电压室包括具有高负电压的阴极。 通过给两个网格形成相似的平行条纹，可以同时获得掩蔽效果和聚焦效果，这样可以提高电子枪的效率。

公开(公告)号：US4707637A

公开(公告)日：1987-11-17

申请号：US842960

申请日：1986-03-24

Applicant: Robin J. Harvey

Inventor： Robin J. Harvey

IPC: H01J23/06 ,  H01J3/02 ,  H01J37/073 ,  H01J37/077 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J3/021

Abstract: A plasma-anode electron gun includes a cathode means of a material such as molybdenum having a relatively high ratio of emission of secondary electrons to impinging helium ions. A hollow annular anode structure (16) contains an ionized plasma, and has a central opening (38) through which the electron beam (36) is directed, when ions from the anode are released to impinge upon the cathode (12). The anode and ion source structure may be grounded, and ions are released through openings facing the cathode when a positive trigger pulse is applied to one or more electrodes extending within the plasma. The cathode is preferably operated at a voltage in the order of thirty to two hundred thousand volts negative with respect to the cathode. Leakage of ions from the hollow anode may be inhibited by the provision of a supplemental grid biased to a low positive potential.

Abstract translation: 等离子体 - 阳极电子枪包括诸如钼的材料的阴极装置，其具有相对较高的二次电子发射比率与入射氦离子的比例。 空心环形阳极结构（16）包含电离等离子体，并且当来自阳极的离子被释放以撞击阴极（12）时，具有电子束（36）所引导的中心开口（38）。 阳极和离子源结构可以接地，并且当正触发脉冲施加到在等离子体内延伸的一个或多个电极时，离子通过面向阴极的开口释放。 阴极优选以相对于阴极为三十到二十万伏负的电压工作。 通过提供偏置于低正电位的补充电网，可以抑制来自中空阳极的离子的泄漏。

公开(公告)号：US4496881A

公开(公告)日：1985-01-29

申请号：US427862

申请日：1982-09-29

Applicant: Richard N. Cheever

Inventor： Richard N. Cheever

IPC: H01J37/06 ,  A23L3/32 ,  A61L2/08 ,  G21K1/00 ,  G21K5/04 ,  H01J3/02 ,  H01J37/30 ,  H01J37/067 ,  H01J1/30

CPC classification number: H01J3/021

Abstract: This disclosure is concerned with automatically replenishable cold cathode structures and the like wherein the monitoring of a predetermined variation in electron beam performance caused by erosion of the cathode material generates control signals for advancing reserve cathode material into operative position.

Abstract translation: 本公开涉及自动补充的冷阴极结构等，其中监测由阴极材料的侵蚀引起的电子束性能的预定变化产生用于将储备阴极材料推进到操作位置的控制信号。

公开(公告)号：US4430570A

公开(公告)日：1984-02-07

申请号：US213026

申请日：1980-12-04

Applicant: Tadahiro Takigawa ,  Isao Sasaki

Inventor： Tadahiro Takigawa ,  Isao Sasaki

IPC: H01J1/14 ,  H01J1/148 ,  H01J1/15 ,  H01J1/16 ,  H01J3/02 ,  H01J37/06

CPC classification number: H01J1/16 ,  H01J1/148 ,  H01J3/021 ,  H01J37/06

Abstract: A variable shaping type electron beam exposing apparatus is provided which comprises an electron gun which irradiates an electron beam from the front end of a cathode chip; shaping plates having openings of variable shapes for shaping the electron beam irradiated from the electron gun into the shapes of these openings; and an objective lens for focusing the electron beam passed through the shaping plates into a predetermined shape on a sample. In this apparatus, the cathode chip is made of single-crystal lanthanum hexaboride whose axial orientation is , the front end of it is formed into a circular conical shape, and half the vertical angle of the front end is set to be between 60.degree. and 85.degree.. The maximum area of the image on the sample is between 2 to 50 .mu.m.sup.2.

Abstract translation: 提供了一种可变整形型电子束曝光装置，其包括从阴极芯片的前端照射电子束的电子枪; 具有可变形状的开口的成形板，用于将从电子枪照射的电子束成形为这些开口的形状; 以及用于将通过成形板的电子束聚焦到样品上的预定形状的物镜。 在该装置中，阴极芯片由轴向取向为<310>的单晶镧六硼化物制成，其前端形成圆锥形，前端的一半垂直角设定在 60°和85°。 样品上图像的最大面积在2到50平方米之间。

公开(公告)号：US3887839A

公开(公告)日：1975-06-03

申请号：US37793273

申请日：1973-07-10

Applicant: JEOL LTD

Inventor： OTA SUSUMU ,  AIHARA RYUZO

IPC: H01J1/304 ,  H01J3/02 ,  H01J37/073 ,  H01J29/52

CPC classification number: H01J3/021

Abstract: A pulsed field emission type electron gun in which the pulse voltage peak between the heated emitter and its associated electrode is maintained constant, and the pulse duty factor or emitter heating temperature of bias voltage is controlled to keep the field emitted electron beam constant, during the pulse rest time, thereby prolonging the life of the emitter regardless of any discrepancy between the radius of curvature of one emitter and another.

Abstract translation: 一种脉冲场发射型电子枪，其中加热的发射极及其相关电极之间的脉冲电压峰值保持恒定，并且控制偏置电压的脉冲占空比或发射极加热温度以保持场发射的电子束恒定， 脉冲休止时间，从而延长发射器的寿命，而不管一个发射器与另一个发射器的曲率半径之间有任何差异。