公开(公告)号：US09111722B2

公开(公告)日：2015-08-18

申请号：US13836890

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Jonathan Liu ,  Jason A. Kenney ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J7/24 ,  H05B31/26 ,  H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract translation: 电感耦合等离子体反应器具有三个同心的RF线圈天线和分流器电路，其通过仅改变分流器电路中的两个无功元件来单独控制三个线圈天线中的每一个中的电流。

公开(公告)号：US20140265832A1

公开(公告)日：2014-09-18

申请号：US14294431

申请日：2014-06-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  C23C16/509 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20130278141A1

公开(公告)日：2013-10-24

申请号：US13836890

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Shahid Rauf ,  Jonathan Liu ,  Jason A. Kenney ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32183

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract translation: 电感耦合等离子体反应器具有三个同心的RF线圈天线和分流器电路，其通过仅改变分流器电路中的两个无功元件来单独控制三个线圈天线中的每一个中的电流。

公开(公告)号：US12237149B2

公开(公告)日：2025-02-25

申请号：US17984772

申请日：2022-11-10

Applicant: Applied Materials, Inc.

Inventor： Deyang Li ,  Sunil Srinivasan ,  Yi-Chuan Chou ,  Shahid Rauf ,  Kuan-Ting Liu ,  Jason A. Kenney ,  Chung Liu ,  Olivier P. Joubert ,  Shreeram Jyoti Dash ,  Aaron Eppler ,  Michael Thomas Nichols

IPC: H01J37/00 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing. The ability to synchronize and control waveform characteristics of a voltage waveform bias established on a substrate during processing allows for an improved control of the generated plasma and process of forming, for example, high-aspect ratio features in the surface of the substrate by a reactive ion etching process. As a result, greater precision for plasma processing can be achieved, which is described herein in more detail.

公开(公告)号：US11551965B2

公开(公告)日：2023-01-10

申请号：US16657604

申请日：2019-10-18

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Xue Chang ,  Shahid Rauf ,  Jason A. Kenney

IPC: H01L21/687 ,  H01L21/683 ,  H02N13/00

Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

公开(公告)号：US10811226B2

公开(公告)日：2020-10-20

申请号：US15867559

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Jason A. Kenney ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  H05H1/46 ,  C23C16/505

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

公开(公告)号：US20180211811A1

公开(公告)日：2018-07-26

申请号：US15934880

申请日：2018-03-23

Applicant: Applied Materials, Inc.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/04 ,  H05H1/46 ,  H01J37/32

CPC classification number: H01J37/04 ,  H01J37/321 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor includes inner, middle and outer current distributors to carry RF power to be supplied to a plasma in the processing region, and a plurality of RF power feeds connected between a plurality of RF power terminals and the inner, middle and outer current distributors. The current distributors are successive concentric axially symmetric hollow bodies. The plurality of current feeds include a middle RF power feed that includes an axial upper portion connected to one of the plurality of RF power terminals, a plurality of arms extending radially outwardly from the axial upper portion, and a plurality of axially extending RF connection rods extending from outer ends of the plurality of arms to the middle current distributor.

公开(公告)号：US09870897B2

公开(公告)日：2018-01-16

申请号：US14319089

申请日：2014-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Jason A. Kenney ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/32119 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

公开(公告)号：USD797691S1

公开(公告)日：2017-09-19

申请号：US29561163

申请日：2016-04-14

Applicant: Applied Materials, Inc.

Designer： Olivier Joubert ,  Jason A. Kenney ,  Sunil Srinivasan ,  James Rogers ,  Rajinder Dhindsa ,  Vedapuram S. Achutharaman ,  Olivier Luere

公开(公告)号：US09745663B2

公开(公告)日：2017-08-29

申请号：US13666224

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: H01L21/00 ,  C23C16/00 ,  C23F1/08 ,  C23C14/28 ,  H05H1/46 ,  B01J12/00 ,  H01J37/32

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.