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    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    11.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号：US20160247964A1

    公开(公告)日：2016-08-25

    申请号：US15045440

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Jing-En Huang

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L21/683

    CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381

    Abstract: A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting table and is processed such that a substrate of the LED wafer has a thickness smaller than or equal to 100 μm. A fixing piece is pasted on the LED wafer surface. The LED wafer is detached from the crafting table. The LED wafer together with the fixing piece are cut and broken, such that the LED wafer forms a plurality of LEDs. The fixing piece is removed. Before the LED wafer is detached from the crafting table, the fixing piece is pasted on the LED wafer to provide a supporting force to the LED wafer to maintain the flatness of the wafer and avoid the wafer being warped or the substrate being broken or damaged, such that product quality and reliability can be improved.

    Abstract translation: 提供了一种发光二极管（LED）及其制造方法。 该方法包括以下步骤。 将LED晶片固定在工艺台上并进行处理，使得LED晶片的基板具有小于或等于100μm的厚度。 将固定件粘贴在LED晶片表面上。 LED晶片与工艺台分离。 LED晶片与固定片一起被切断和断开，使得LED晶片形成多个LED。 拆下固定件。 在将LED晶片与工艺台分离之前，将固定件粘贴在LED晶片上，以向LED晶片提供支撑力以保持晶片的平坦度，并避免晶片翘曲或基板被破坏或损坏， 从而可以提高产品质量和可靠性。

    LIGHT EMITTING COMPONENT
    13.
    发明申请
    LIGHT EMITTING COMPONENT 审中-公开
    发光元件

    公开(公告)号：US20160005922A1

    公开(公告)日：2016-01-07

    申请号：US14536676

    申请日：2014-11-09

    Applicant: Genesis Photonics Inc.

    Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Tung-Lin Chuang ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/10 ,  H01L33/50

    CPC classification number: H01L33/50 ,  H01L33/46

    Abstract: A light emitting component includes a light emitting unit, a phosphor layer and a distributed Bragg reflector layer. The phosphor layer is disposed on the light emitting unit and the distributed Bragg reflector layer is disposed above the phosphor layer. The distributed Bragg reflector layer is formed by at least two materials with different refractive indices.

    Abstract translation: 发光部件包括发光单元，荧光体层和分布布拉格反射器层。 荧光体层设置在发光单元上，分布式布拉格反射层设置在荧光体层的上方。 分布式布拉格反射层由具有不同折射率的至少两种材料形成。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    14.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200220050A1

    公开(公告)日：2020-07-09

    申请号：US16705255

    申请日：2019-12-06

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Kai-Shun Kang ,  Tung-Lin Chuang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Chih-Ming Shen ,  Jing-En Huang

    IPC: H01L33/46 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38

    Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

    Electrode pad structure of a light emitting diode
    15.
    发明授权
    Electrode pad structure of a light emitting diode 有权

    公开(公告)号：US10608144B2

    公开(公告)日：2020-03-31

    申请号：US15975743

    申请日：2018-05-09

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62 ,  H01L33/40 ,  H01L33/36

    Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

    Method for manufacturing light emitting unit
    16.
    发明授权
    Method for manufacturing light emitting unit 有权

    公开(公告)号：US10573779B2

    公开(公告)日：2020-02-25

    申请号：US16231914

    申请日：2018-12-24

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

    IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

    Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

    METHOD OF MASS TRANSFERRING ELECTRONIC DEVICE
    18.
    发明申请
    METHOD OF MASS TRANSFERRING ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20190139932A1

    公开(公告)日：2019-05-09

    申请号：US16241947

    申请日：2019-01-07

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L23/00 ,  H01L33/62 ,  H01L21/78 ,  H01L33/00 ,  H01L21/683 ,  H01L25/075

    Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

    Micro light emitting diode and manufacturing method thereof
    19.
    发明授权
    Micro light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US10134950B2

    公开(公告)日：2018-11-20

    申请号：US15680227

    申请日：2017-08-18

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L27/15 ,  H01L33/06

    Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

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