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    LIGHT EMITTING DIODE
    11.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160247974A1

    公开(公告)日：2016-08-25

    申请号：US15045279

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

    IPC: H01L33/46 ,  H01L33/06 ,  H01L33/38 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12

    CPC classification number: H01L33/46 ,  H01L33/38

    Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

    Abstract translation: 包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极和布拉格反射器结构的发光二极管。 发光层被配置为发射光束并且位于第一类型半导体层和第二类型半导体层之间。 光束在发光波长范围内具有峰值波长。 第一型半导体层，发光层和第二类型半导体层位于布拉格反射器结构的同一侧。 至少覆盖0.8X〜1.8Xnm的反射波长范围内，布拉格反射体结构的反射率大于或等于95％，X是发光波长范围的峰值波长。

    LIGHT EMITTING ELEMENT STRUCTURE
    14.
    发明申请
    LIGHT EMITTING ELEMENT STRUCTURE 审中-公开
    发光元件结构

    公开(公告)号：US20160079494A1

    公开(公告)日：2016-03-17

    申请号：US14582195

    申请日：2014-12-24

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/58 ,  H01L33/50

    CPC classification number: H01L33/58 ,  H01L33/50 ,  H01L2933/0083

    Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first periodic sub-wavelength microstructure formed on the transparent light guide structure, wherein a plurality of holes of the first periodic sub-wavelength microstructure form a periodic pattern, and a distance between two adjacent holes of the first periodic sub-wavelength microstructure is smaller than λ/n, λ is a peak wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first periodic sub-wavelength microstructure.

    Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及形成在所述透明导光体结构上的第一周期性亚波长微结构，其中所述第一周期性亚波长微结构的多个孔形成周期性图案，并且所述第一周期性亚波长微结构的两个相邻孔之间的距离为 小于λ/ n，λ是从发光单元通过封装单元的光的峰值波长，n是第一周期性亚波长微结构的折射率。

    LIGHT EMITTING DEVICE STRUCTURE
    15.
    发明申请
    LIGHT EMITTING DEVICE STRUCTURE 审中-公开
    发光装置结构

    公开(公告)号：US20160013381A1

    公开(公告)日：2016-01-14

    申请号：US14542657

    申请日：2014-11-17

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/60 ,  H01L33/50 ,  H01L33/54

    CPC classification number: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

    Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.

    Abstract translation: 发光器件结构包括发光器件，模塑料，透明衬底和反射层。 发光器件具有彼此相对的上表面和下表面，连接上表面和下表面的侧表面，以及位于下表面上并彼此分离的第一焊盘和第二焊盘。 成型化合物至少封装上表面和侧表面，并暴露第一垫和第二垫。 透明基板设置在发光器件的上表面之上，并且模塑料位于透明基板和发光器件之间。 反射层直接覆盖发光器件的侧表面，其中模制化合物封装反射层并暴露反射层的底表面。

    Electrode pad structure of a light emitting diode
    18.
    发明授权
    Electrode pad structure of a light emitting diode 有权

    公开(公告)号：US10608144B2

    公开(公告)日：2020-03-31

    申请号：US15975743

    申请日：2018-05-09

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/00 ,  H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62 ,  H01L33/40 ,  H01L33/36

    Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

    Method for manufacturing light emitting unit
    19.
    发明授权
    Method for manufacturing light emitting unit 有权

    公开(公告)号：US10573779B2

    公开(公告)日：2020-02-25

    申请号：US16231914

    申请日：2018-12-24

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

    IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

    Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

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