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    Method of manufacturing emitter
    11.
    发明授权
    Method of manufacturing emitter 有权

    公开(公告)号：US10658143B2

    公开(公告)日：2020-05-19

    申请号：US16280719

    申请日：2019-02-20

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yoko Nakajima ,  Yoshimi Kawanami ,  Hironori Moritani ,  Hiroshi Oba

    IPC: H01J9/02 ,  H01J37/305 ,  C25F3/08 ,  C25F3/00 ,  C25F3/16 ,  C25F3/26

    Abstract: Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.

    Focused ion beam apparatus and control method thereof
    13.
    发明授权
    Focused ion beam apparatus and control method thereof 有权
    聚焦离子束装置及其控制方法

    公开(公告)号：US09418817B2

    公开(公告)日：2016-08-16

    申请号：US14218020

    申请日：2014-03-18

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Fumio Aramaki ,  Yasuhiko Sugiyama ,  Hiroshi Oba

    IPC: H01J37/08

    CPC classification number: H01J37/08 ,  H01J2237/002 ,  H01J2237/0807

    Abstract: A focused ion beam apparatus has an emitter for emitting an ion beam, an ion source chamber accommodating the emitter, a cooling unit and a heating unit for cooling and heating, respectively, the emitter, and an ion source gas supply section for supplying to the ion source chamber an ion source gas that is exchangeable with another ion source gas. A control section controls an operation of the cooling unit such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature higher than a temperature at which the ion source gas before and after the exchange freezes. The control section controls an operation of the heater so that the emitter is temporarily heated to release the ion source gas from a surface of the emitter before the ion source gas is exchanged with the other ion source gas.

    Abstract translation: 聚焦离子束装置具有用于发射离子束的发射体，容纳发射体的离子源室，分别用于冷却和加热发光体的冷却单元和加热单元，以及用于向 离子源室可与另一离子源气体交换的离子源气体。 控制部控制冷却单元的动作，使得与离子源室中的离子源气体接触的壁面的温度保持在比交换前后的离子源气体冻结的温度高的温度。 控制部分控制加热器的操作，使得在将离子源气体与其它离子源气体交换之前，发射体被暂时加热以从发射器的表面释放离子源气体。

    Charged particle beam apparatus
    16.
    发明授权
    Charged particle beam apparatus 有权

    公开(公告)号：US11017988B2

    公开(公告)日：2021-05-25

    申请号：US16572183

    申请日：2019-09-16

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Hiroshi Oba ,  Yasuhiko Sugiyama ,  Yasutaka Otsuka

    IPC: H01J37/32

    Abstract: An charged particle beam apparatus includes: a gas introduction chamber to which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber; a coil wound around an outer circumference of the plasma generation chamber and receiving a high-frequency power; an extraction electrode applying an extraction voltage to plasma discharged from a plasma aperture at an outlet of the plasma generation chamber; an ampere meter measuring a magnitude of a plasma current caused by the plasma moved out of the plasma aperture; an extraction voltage calculator calculating, based on variation in the magnitude of the plasma current measured by the ampere meter with respect to variation in the extraction voltage, an extraction voltage set value; and a controller controlling the extraction voltage based on the extraction voltage set value calculated by the extraction voltage calculator.

    COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF
    17.
    发明申请
    COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20200266029A1

    公开(公告)日：2020-08-20

    申请号：US16785362

    申请日：2020-02-07

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yasuhiko SUGIYAMA ,  Naoko Hirose ,  Hiroshi Oba

    IPC: H01J37/248 ,  H01J37/08 ,  H01J37/28

    Abstract: Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

    Focused ion beam apparatus
    18.
    发明授权
    Focused ion beam apparatus 有权

    公开(公告)号：US10176964B2

    公开(公告)日：2019-01-08

    申请号：US15256967

    申请日：2016-09-06

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yasuhiko Sugiyama ,  Hiroshi Oba

    IPC: H01J37/08 ,  H01J37/10 ,  H01J37/18

    Abstract: A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode.

    Repair apparatus
    20.
    发明授权
    Repair apparatus 有权
    维修设备

    公开(公告)号：US09378858B2

    公开(公告)日：2016-06-28

    申请号：US14466524

    申请日：2014-08-22

    Applicant: Hitachi High-Tech Science Corporation

    Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

    IPC: G21K1/14 ,  G21K5/04 ,  H01J37/305 ,  H01J37/08

    CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

    Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

    Abstract translation: 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。

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