公开(公告)号：US20170148603A1

公开(公告)日：2017-05-25

申请号：US15416686

申请日：2017-01-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J1/304 ,  H01J37/08 ,  H01J37/30 ,  H01J37/28 ,  G01Q60/16 ,  G01Q70/08 ,  H01J37/073 ,  H01J37/21

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

公开(公告)号：US10014157B2

公开(公告)日：2018-07-03

申请号：US15279055

申请日：2016-09-28

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu Kozakai ,  Fumio Aramaki ,  Osamu Matsuda ,  Kensuke Shiina ,  Kazuo Aita ,  Anto Yasaka

IPC: A61N5/00 ,  H01J37/22 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/2067 ,  H01J2237/226 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A method for acquiring an image, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes performing an equal-width scan of the ion beam in a first direction that obliquely intersects the linear edge and sweep in a second direction intersecting the first direction. The ion beam is sequentially scanned in different patterns on different scan regions of parallelogram shape, each of which includes the image acquiring region. Secondary charged particles are detected to generate image data of all the scan regions, and image data of the scan regions are calculated to generate image data of the image acquiring region. The image data of the image acquiring region are synthesized to display the image data of the image acquiring region.

公开(公告)号：US09773634B2

公开(公告)日：2017-09-26

申请号：US15416686

申请日：2017-01-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J37/304 ,  G01Q60/10 ,  H01J37/08 ,  H01J1/304 ,  H01J37/073 ,  H01J37/21 ,  H01J37/28 ,  G01Q60/16 ,  G01Q70/08 ,  H01J37/30

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

公开(公告)号：US11081312B2

公开(公告)日：2021-08-03

申请号：US16785373

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu Kozakai ,  Yoshimi Kawanami ,  Hiroyuki Mutoh ,  Yoko Nakajima ,  Hironori Moritani ,  Shinichi Matsubara

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/10 ,  H01J37/305

Abstract: A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.

公开(公告)号：US09336979B2

公开(公告)日：2016-05-10

申请号：US14591843

申请日：2015-01-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Anto Yasaka ,  Fumio Aramaki ,  Yasuhiko Sugiyama ,  Tomokazu Kozakai ,  Osamu Matsuda

IPC: H01J27/02 ,  H01J37/08 ,  H01J37/305 ,  H01J27/26

CPC classification number: H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/3056 ,  H01J2237/0807 ,  H01J2237/182

Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

Abstract translation: 聚焦离子束装置具有离子源室，其中设置有用于发射离子的发射极。 发射体的表面由贵金属形成，例如铂，钯，铱，铑或金。 气体供给单元向离子源室供给氮气，使得氮气吸附在发射体的表面。 提取电极与发射极间隔开，并向提取电极施加电压，使吸附的氮气离子化，并以离子束形式提取氮离子。 温度控制单元控制发射器的温度。

公开(公告)号：US08999178B2

公开(公告)日：2015-04-07

申请号：US14278760

申请日：2014-05-15

Applicant: Hitachi High-Tech Science Corporation

Inventor： Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Anto Yasaka

IPC: C25F3/00 ,  H01J27/02 ,  H01J9/02 ,  H01J1/15 ,  H01J1/304 ,  H01J9/04 ,  H01J37/08 ,  H01J37/305 ,  H01J37/26

CPC classification number: H01J27/02 ,  H01J1/15 ,  H01J1/3044 ,  H01J9/02 ,  H01J9/025 ,  H01J9/04 ,  H01J37/08 ,  H01J37/26 ,  H01J37/3056 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.

Abstract translation: 一种用于制造尖锐的针状发射体的方法，该方法包括：电解抛光导电发射体材料的端部，使其朝其尖端部分逐渐变细; 进行第一蚀刻，其中用电荷粒子束照射发射体材料的电解抛光部分以形成具有包括尖端部分的顶点的棱锥状的锐化部分; 进行第二蚀刻，其中尖端部分通过场辅助气体蚀刻进一步锐化，同时通过场离子显微镜观察尖端部分处的晶体结构，并将尖端部分的前缘处的原子数保持在预定的 数量以下 并且加热发射体材料以将原子布置在尖锐部分的尖端部分的金字塔形状。

公开(公告)号：US09793092B2

公开(公告)日：2017-10-17

申请号：US14601446

申请日：2015-01-21

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Masashi Muramatsu ,  Tomokazu Kozakai ,  Fumio Aramaki

IPC: H01J37/304 ,  H01J37/22 ,  H01J37/28 ,  G21K5/02

CPC classification number: H01J37/304 ,  G21K5/02 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/08 ,  H01J2237/15 ,  H01J2237/2806 ,  H01J2237/317

Abstract: A charged particle beam apparatus has a charged particle beam column configured to irradiate a charged particle beam, and a controller configured to control the charged particle beam column to irradiate the charged particle beam at a first pixel interval for a first region and to irradiate the charged particle beam at a second pixel interval different from the first pixel interval for a second region included in the first region. The first and second regions include plural first and second pixels each including first and second sub-pixels which are irradiated by the charged particle beam to generate secondary electrons. First and second sub-pixel images are formed based on the detected secondary electrons, and the first and second sub-pixel images are synthesized to form first and second images.

公开(公告)号：US09793085B2

公开(公告)日：2017-10-17

申请号：US15010231

申请日：2016-01-29

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Anto Yasaka ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Hiroshi Oba

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J2237/0807

Abstract: A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. The gas field ion source has an emitter for emitting ions, the emitter having a sharpened end part made of iridium fixed to a cylinder-shaped base part made of dissimilar wire.

公开(公告)号：US20160322123A1

公开(公告)日：2016-11-03

申请号：US15189417

申请日：2016-06-22

Applicant: Hitachi High-Tech Science Corporation

Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

IPC: G21K5/04 ,  H01J37/305 ,  H01J37/08

CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

公开(公告)号：US20150053866A1

公开(公告)日：2015-02-26

申请号：US14466524

申请日：2014-08-22

Applicant: Hitachi High-Tech Science Corporation

Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

IPC: G21K5/04 ,  G21K1/14 ,  H01J37/305

CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

Abstract translation: 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。