公开(公告)号：US09773634B2

公开(公告)日：2017-09-26

申请号：US15416686

申请日：2017-01-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J37/304 ,  G01Q60/10 ,  H01J37/08 ,  H01J1/304 ,  H01J37/073 ,  H01J37/21 ,  H01J37/28 ,  G01Q60/16 ,  G01Q70/08 ,  H01J37/30

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

公开(公告)号：US09640361B2

公开(公告)日：2017-05-02

申请号：US14830106

申请日：2015-08-19

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Anto Yasaka ,  Yasuhiko Sugiyama ,  Hiroshi Oba

IPC: G21K5/04 ,  H01J27/26 ,  H01J37/08 ,  H01J1/15 ,  H01J27/02 ,  H01J1/18 ,  H01J3/04

CPC classification number: H01J27/26 ,  H01J1/15 ,  H01J1/18 ,  H01J3/04 ,  H01J27/024 ,  H01J37/08 ,  H01J2237/002 ,  H01J2237/06316

Abstract: A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.

公开(公告)号：US11017982B2

公开(公告)日：2021-05-25

申请号：US16785362

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yasuhiko Sugiyama ,  Naoko Hirose ,  Hiroshi Oba

IPC: H01J37/248 ,  H01J37/28 ,  H01J37/08

Abstract: Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

公开(公告)号：US20170278678A1

公开(公告)日：2017-09-28

申请号：US15468676

申请日：2017-03-24

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Hiroshi Oba ,  Yasuhiko Sugiyama

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32422 ,  H01J37/08 ,  H01J37/244 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/3299 ,  H01J2237/006 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/31749

Abstract: A charged particle beam apparatus according to this invention includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein; a plasma electrode that is provided apart from the electrode; a detection unit for detecting whether or not the plasma has been ignited in the plasma generation chamber; and a controller that controls, based on the result of detection by the detection unit, a voltage to be supplied to the plasma electrode in association with a predetermined pressure for supplying the raw gas.

公开(公告)号：US10056232B2

公开(公告)日：2018-08-21

申请号：US15468676

申请日：2017-03-24

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Hiroshi Oba ,  Yasuhiko Sugiyama

IPC: H01J7/24 ,  H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32422 ,  H01J37/08 ,  H01J37/244 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/3299 ,  H01J2237/006 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/31749

Abstract: A charged particle beam apparatus according to this invention includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein; a plasma electrode that is provided apart from the electrode; a detection unit for detecting whether or not the plasma has been ignited in the plasma generation chamber; and a controller that controls, based on the result of detection by the detection unit, a voltage to be supplied to the plasma electrode in association with a predetermined pressure for supplying the raw gas.

公开(公告)号：US09793085B2

公开(公告)日：2017-10-17

申请号：US15010231

申请日：2016-01-29

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Anto Yasaka ,  Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Hiroshi Oba

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J2237/0807

Abstract: A focused ion beam apparatus is equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. The gas field ion source has an emitter for emitting ions, the emitter having a sharpened end part made of iridium fixed to a cylinder-shaped base part made of dissimilar wire.

公开(公告)号：US20160322123A1

公开(公告)日：2016-11-03

申请号：US15189417

申请日：2016-06-22

Applicant: Hitachi High-Tech Science Corporation

Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

IPC: G21K5/04 ,  H01J37/305 ,  H01J37/08

CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

公开(公告)号：US09111717B2

公开(公告)日：2015-08-18

申请号：US13845582

申请日：2013-03-18

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tatsuya Asahata ,  Yasuhiko Sugiyama ,  Hiroshi Oba

IPC: H01J37/10 ,  H01J37/302 ,  H01J37/305

CPC classification number: H01J37/10 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/0206 ,  H01J2237/04924 ,  H01J2237/216 ,  H01J2237/24535 ,  H01J2237/31749

Abstract: An ion beam apparatus includes an ion source configured to emit an ion beam, a condenser lens electrode that condenses the ion beam, and a condenser lens power source configured to apply a voltage to the condenser lens electrode. A storage portion stores a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value. A control portion retrieves the third voltage value from the storage portion and sets the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieves the fourth voltage value from the storage portion and sets the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.

Abstract translation: 离子束装置包括被配置为发射离子束的离子源，冷凝离子束的聚光透镜电极和被配置为向聚光透镜电极施加电压的聚光透镜电源。 存储部分存储第一电压值，第二电压值，第三电压值和第四电压值。 当观察模式切换到大范围观察模式时，控制部分从存储部分检索第三电压值，并将获取的第三电压值设置为聚光透镜电源，并从存储部分检索第四电压值， 当处理模式切换到大范围观察模式时，将检索到的第四电压值设置为聚光透镜电源。

公开(公告)号：US20150053866A1

公开(公告)日：2015-02-26

申请号：US14466524

申请日：2014-08-22

Applicant: Hitachi High-Tech Science Corporation

Inventor： Fumio Aramaki ,  Anto Yasaka ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Hiroshi Oba ,  Tomokazu Kozakai ,  Kazuo Aita

IPC: G21K5/04 ,  G21K1/14 ,  H01J37/305

CPC classification number: G21K5/04 ,  G21K1/14 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/0807 ,  H01J2237/202 ,  H01J2237/31744

Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.

Abstract translation: 提供了一种包括气体离子源的修复装置，其包括具有尖锐尖端的离子产生部分，冷却尖端的冷却单元，通过聚焦离子束的离子聚焦而形成聚焦离子束的离子束柱 气体离子源，将待聚焦离子束照射的样品放置在其上的样品台，容纳至少其中的样品台的样品室和用于修复掩模或模具的控制单元，用于纳米 作为样品的压印光刻，由离子束柱形成的聚焦离子束。 气体离子源产生氮离子作为离子，并且尖端由能够产生离子的铱单晶构成。

公开(公告)号：US20150047079A1

公开(公告)日：2015-02-12

申请号：US14455338

申请日：2014-08-08

Applicant: Hitachi High-Tech Science Corporation

Inventor： Tomokazu Kozakai ,  Osamu Matsuda ,  Yasuhiko Sugiyama ,  Kazuo Aita ,  Fumio Aramaki ,  Anto Yasaka ,  Hiroshi Oba

IPC: H01J1/304 ,  G01Q60/24 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  G01Q60/10 ,  H01J37/28

CPC classification number: H01J1/3044 ,  G01Q60/10 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q70/08 ,  G01Q70/16 ,  H01J1/3048 ,  H01J37/073 ,  H01J37/08 ,  H01J37/21 ,  H01J37/28 ,  H01J37/3002 ,  H01J2201/30415 ,  H01J2201/30496 ,  H01J2237/002 ,  H01J2237/006

Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

Abstract translation: 提供了一种铱尖端，其包括在具有<210>取向的单晶的锐化顶点部分中具有一个{100}晶面作为多个棱锥表面之一的金字塔结构。 将铱尖端施加到气体场离子源或电子源。 将气体离子源和/或电子源施加到聚焦离子束装置，电子显微镜，电子束施加分析装置，离子电子多光束装置，扫描探针显微镜或掩模修复装置。