公开(公告)号：US20190096690A1

公开(公告)日：2019-03-28

申请号：US15717076

申请日：2017-09-27

Applicant: Lam Research Corporation

Inventor： Andreas FISCHER ,  Nerissa DRAEGER

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/31105 ,  H01J37/321 ,  H01J2237/2001 ,  H01J2237/3341 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719

Abstract: A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.

公开(公告)号：US20180358253A1

公开(公告)日：2018-12-13

申请号：US15864293

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGJIN NOH ,  NAMJUN KANG ,  EUNG-SU KIM ,  SEUNGBO SHIM ,  SANG-HO LEE

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H02N13/00

Abstract: An electrostatic chuck includes: a chuck base including a first hole; a first plate on the chuck base, wherein the first plate includes a second hole on the first hole; a first bushing in the first hole; and a porous block in the first bushing, wherein the first bushing contacts the first plate and is disposed adjacent to the porous block.

公开(公告)号：US20180350569A1

公开(公告)日：2018-12-06

申请号：US15989291

申请日：2018-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kengo KANEKO ,  Jun HIROSE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.

公开(公告)号：US10074555B2

公开(公告)日：2018-09-11

申请号：US13786189

申请日：2013-03-05

Applicant: Applied Materials, Inc.

Inventor： Blake Koelmel ,  Nyi O. Myo

IPC: H01L21/687 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68742 ,  C23C16/4584 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32733 ,  H01J2237/2001 ,  H01L21/6838 ,  H01L21/68785

Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.

公开(公告)号：US20180226222A1

公开(公告)日：2018-08-09

申请号：US15426331

申请日：2017-02-07

Applicant: United Technologies Corporation

Inventor： James W. Neal ,  Michael J. Maloney ,  Kevin W. Schlichting ,  David A. Litton

IPC: H01J37/30 ,  G01K7/02 ,  G01K1/14 ,  G01N25/00 ,  H01J37/317 ,  C23C14/24 ,  C23C14/54

CPC classification number: H01J37/3005 ,  C23C14/243 ,  C23C14/30 ,  C23C14/505 ,  C23C14/54 ,  G01K1/14 ,  G01K7/02 ,  G01K13/08 ,  G01N25/00 ,  H01J37/3178 ,  H01J2237/2001 ,  H01J2237/20214

Abstract: A system for measuring a temperature of a rotating workpiece comprises a deposition chamber, a crucible within the deposition chamber, an energy source, a drive system, a temperature sensor, first and second sensor wires, a dynamic electrical connection, and a control system. The crucible is configured to hold a deposition feedstock material. The energy source is configured to evaporate the deposition feedstock material. The drive system is configured to rotate the workpiece such that the evaporated deposition feedstock material can impinge the rotating workpiece. The temperature sensor is configured to sense the temperature of the rotating workpiece. The first and second sensor wires are electrically connected to the temperature sensor. The dynamic electrical connection is configured to electrically communicate the signal indicative of the sensed temperature from the rotatable workpiece holder to the stationary portion. The control system is configured to measure the temperature of the workpiece during rotation.

公开(公告)号：US20180202040A1

公开(公告)日：2018-07-19

申请号：US15921030

申请日：2018-03-14

Applicant: Tango Systems, Inc.

Inventor： Ravi Mullapudi ,  Harish Varma Penmethsa ,  Harshal T. Vasa ,  Srikanth Dasaradhi ,  Lee LaBlanc

IPC: C23C14/35 ,  H01J37/34 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32

CPC classification number: C23C14/352 ,  C23C14/50 ,  C23C14/505 ,  C23C14/541 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3455 ,  H01J37/3464 ,  H01J2237/006 ,  H01J2237/2001 ,  H01J2237/20214

Abstract: A circular PVD chamber has a plurality of sputtering targets mounted on a top wall of the chamber. A pallet in the chamber is coupled to a motor for rotating the pallet about its center axis. The pallet has a diameter less than the diameter of the circular chamber. The pallet is also shiftable in an XY direction to move the center of the pallet beneath any of the targets so all areas of a workpiece supported by the pallet can be positioned directly below any one of the targets. A scanning magnet is in back of each target and is moved, via a programmed controller, to only be above portions of the workpiece so that no sputtered material is wasted. For depositing a material onto small workpieces, a cooling backside gas volume is created between the pallet and the underside of sticky tape supporting the workpieces.

公开(公告)号：US09978599B2

公开(公告)日：2018-05-22

申请号：US15609273

申请日：2017-05-31

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01L21/67 ,  H01L21/677 ,  H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US20180068827A1

公开(公告)日：2018-03-08

申请号：US15811911

申请日：2017-11-14

Applicant: Protochips, Inc.

Inventor： Daniel Stephen Gardiner ,  William Bradford Carpenter ,  John Damiano, JR. ,  Franklin Stampley Walden, II ,  David P. Nackashi

IPC: H01J37/26 ,  G01K11/32 ,  G01L11/02 ,  G01L19/04 ,  H01J37/20 ,  H01J37/16

CPC classification number: H01J37/261 ,  G01K11/32 ,  G01L11/025 ,  G01L19/04 ,  H01J37/16 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2003 ,  H01J2237/206 ,  H01J2237/2801

Abstract: An apparatus and a method for measuring and monitoring the properties of a fluid, for example, pressure, temperature, and chemical properties, within a sample holder for an electron microscope. The apparatus includes at least one fiber optic sensor used for measuring temperature and/or pressure and/or pH positioned in proximity of the sample.

公开(公告)号：US09852885B2

公开(公告)日：2017-12-26

申请号：US15450235

申请日：2017-03-06

Applicant: NuFlare Technology, Inc.

Inventor： Mizuna Suganuma ,  Noriaki Nakayamada

IPC: H01J37/304 ,  H01J37/317 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/20 ,  H01J37/3174 ,  H01J2237/2001

Abstract: A charged particle beam writing method includes acquiring a pair of a reference dose and a backscatter coefficient for proximity effect correction using a first settling time, acquiring a first relation between a temperature rise amount and a critical dimension variation amount using a second settling time shorter than the first settling time, the backscatter coefficient and the reference dose acquired, calculating a temperature correction parameter depending on a temperature rise amount, for correcting a dose, by using the first relation, and a second relation on a dose and a pattern critical dimension in a case of using the first settling time, calculating a beam irradiation dose by the reference dose and a dose coefficient obtained from the backscatter coefficient of the pair acquired, and the temperature correction parameter, and writing a pattern with a beam based on the dose calculated using the second settling time.

公开(公告)号：US09842752B2

公开(公告)日：2017-12-12

申请号：US13923955

申请日：2013-06-21

Applicant: David Bernhardt ,  W. Davis Lee ,  William DiVergilio ,  Marvin Farley

Inventor： David Bernhardt ,  W. Davis Lee ,  William DiVergilio ,  Marvin Farley

IPC: H01L21/67 ,  H01J37/317 ,  H01L21/265 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01J37/3171 ,  H01J2237/2001 ,  H01L21/26506 ,  H01L21/67201 ,  H01L21/67213 ,  H05B3/0047

Abstract: A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.