公开(公告)号：US20240145215A1

公开(公告)日：2024-05-02

申请号：US17976578

申请日：2022-10-28

Applicant: Applied Materials, Inc.

Inventor： Shreeram Jyoti DASH

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32128 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber that configured to adjust the timing and characteristics of the asymmetric voltage waveforms that are each provided to one or more electrodes or coils in a plasma processing chamber in an effort to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) for the plasma generated ions that interact with a surface of a substrate during plasma processing. The methods and apparatus disclosed herein are configured to control and sustain a plasma formed in a processing region of the plasma processing chamber without the need for the delivery of a radio frequency (RF) waveform during processing. The ability to synchronize and control waveform characteristics, such as frequency, slope of the portions of the voltage waveform, waveform shape and applied voltage on-time during a pulse period, of the voltage pulses provided in each of the pulsed voltage waveforms applied to different electrodes and/or coils allows for an improved control of the generated plasma.

公开(公告)号：US11967486B2

公开(公告)日：2024-04-23

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton Bravo ,  Chih-Hsun Hsu ,  Serge Kosche ,  Stephen Whitten ,  Shih-Chung Kon ,  Mark Kawaguchi ,  Himanshu Chokshi ,  Dan Zhang ,  Gnanamani Amburose

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US11955367B2

公开(公告)日：2024-04-09

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei Tanabe ,  Koji Yoshimura ,  Ryo Matsuhashi

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/68764 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32504 ,  H01J37/3435 ,  H01L21/02274 ,  H01J2237/332

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US11915912B2

公开(公告)日：2024-02-27

申请号：US18084684

申请日：2022-12-20

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Ying Wu ,  Alex Paterson

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32568 ,  H01L21/6833 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：US20240030000A1

公开(公告)日：2024-01-25

申请号：US18480495

申请日：2023-10-03

Applicant: Lam Research Corporation

Inventor： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32146 ,  H01J37/32128 ,  H01L21/3065

Abstract: Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

公开(公告)号：US11862434B2

公开(公告)日：2024-01-02

申请号：US17117720

申请日：2020-12-10

Applicant: PSK INC.

Inventor： Young Jae Ma ,  Sung Jin Yoon ,  Hyo Jeong Seo ,  Jong Woo Park

IPC: H01J37/32 ,  C23C4/04

CPC classification number: H01J37/32477 ,  H01J37/321 ,  H01J37/3222 ,  C23C4/04

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

公开(公告)号：US11817291B2

公开(公告)日：2023-11-14

申请号：US17321126

申请日：2021-05-14

Applicant: PSK INC.

Inventor： Mu-Kyeom Mun

IPC: H01J37/16 ,  H01J37/32

CPC classification number: H01J37/165 ,  H01J37/321

Abstract: The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.

公开(公告)号：US20230317439A1

公开(公告)日：2023-10-05

申请号：US18203864

申请日：2023-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Meehyun LIM ,  Sungyeol KIM ,  Taekjin KIM ,  Minsung KIM ,  Hosun YOO

IPC: H01J37/32 ,  G02F1/035

CPC classification number: H01J37/32935 ,  G02F1/035 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642 ,  H01J2237/334

Abstract: An apparatus for monitoring a plasma process may include an electro-optical (EO) sensor module and an optical guide, the EO sensor module may be arranged in a plasma chamber configured to perform a semiconductor process for processing a substrate using plasma, the EO sensor module may include a non-conductive material having an optical refractive index changed by an electric field formed in the plasma chamber, the optical guide may form at least one internal path of a light, which may have an optical characteristic changed by the changed optical refractive index, between the EO sensor module and the plasma chamber.

公开(公告)号：US11735423B2

公开(公告)日：2023-08-22

申请号：US17728618

申请日：2022-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Tabata

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/033 ,  H01L21/66 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01J37/321 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L22/20 ,  H01J2237/3321 ,  H01J2237/3343 ,  H01J2237/3344 ,  H01L22/12

Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

公开(公告)号：US20230230811A1

公开(公告)日：2023-07-20

申请号：US17998354

申请日：2021-05-25

Applicant: Lam Research Corporation

Inventor： Jengyi Yu ,  Da Li ,  Younghee Lee ,  Samantha S.H. Tan ,  Alan J. Jensen ,  Jun Xue ,  Mary Anne Manumpil

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/033 ,  G03F7/09 ,  G03F7/004 ,  G03F7/16 ,  G03F7/11

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0332 ,  G03F7/094 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/11 ,  H01J2237/3328 ,  H01J37/32816 ,  H01J37/321 ,  H01J37/32899

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.