公开(公告)号：US20170197826A1

公开(公告)日：2017-07-13

申请号：US15352795

申请日：2016-11-16

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

Inventor： Wei WANG ,  Chao ZHENG

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00801 ,  B81B7/0025 ,  B81B2201/0257 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0133 ,  B81C2201/053

Abstract: An electromechanical device may include a first substrate, a second substrate, a connector, and a protector. The connector may be formed of a first dielectric material and may be positioned between the first substrate and the second substrate. A first side of the connector may directly contact the first substrate. The protector may be formed of a second dielectric material and may directly contact a second side of the connector.

公开(公告)号：US09585237B2

公开(公告)日：2017-02-28

申请号：US14682810

申请日：2015-04-09

Applicant: Honeywell International Inc.

Inventor： James Goeders ,  Matthew S. Marcus ,  Thomas Ohnstein ,  Terry Dean Stark

IPC: H01S1/00 ,  H05H3/02

CPC classification number: H05H3/02 ,  B81B7/02 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: A micro-structured atomic source system is described herein. One system includes a silicon substrate, a dielectric diaphragm, wherein the dielectric diaphragm includes a heater configured to heat an atomic source substance, an intermediary material comprising a chamber configured to receive the atomic source substance, and a guide material configured to direct a flux of atoms from the atomic source substance.

Abstract translation: 本文描述了微结构的原子源系统。 一个系统包括硅衬底，介质隔膜，其中介质隔膜包括构造成加热原子源物质的加热器，包括被配置为接纳原子源物质的室的中间材料，以及引导材料， 原子来源物质的原子。

公开(公告)号：US20170015547A1

公开(公告)日：2017-01-19

申请号：US15281589

申请日：2016-09-30

Applicant: INVENSENSE, INC.

Inventor： Michael J. Daneman ,  Fariborz Assaderaghi

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/0025 ,  B81B7/007 ,  B81B2207/015 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00801 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/053 ,  B81C2203/0735

Abstract: Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electro-mechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.

Abstract translation: 提供了保护CMOS层免于暴露于释放化学品的系统和方法。 释放化学品用于释放与CMOS晶片集成的微机电（MEMS）器件。 在互补金属氧化物半导体（CMOS）晶片中产生的钝化开口的侧壁暴露了CMOS释放化学品接触时可能损坏的CMOS晶片的电介质层。 在一个方面，为了保护CMOS晶片并防止电介质层的暴露，钝化开口的侧壁可以被抵抗释放化学品的金属阻挡层覆盖。 另外或可选地，可以在CMOS晶片的表面上沉积绝缘阻挡层，以保护钝化层免于暴露于释放化学品。

公开(公告)号：US09446946B2

公开(公告)日：2016-09-20

申请号：US14862504

申请日：2015-09-23

Applicant: UNIVERSITAET STUTTGART

Inventor： Patrick Schalberger ,  Norbert Fruehauf ,  Marcus Herrmann

IPC: H01L21/00 ,  H01L21/16 ,  B81C1/00 ,  H01L29/66 ,  H01L21/306 ,  H01L21/465 ,  H01L21/28 ,  H01L21/44 ,  H01L29/24 ,  H01L29/872 ,  H01L29/16

CPC classification number: B81C1/00246 ,  B81C2201/0133 ,  B81C2203/0742 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/44 ,  H01L21/465 ,  H01L29/1604 ,  H01L29/24 ,  H01L29/247 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/872

Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

公开(公告)号：US09404913B2

公开(公告)日：2016-08-02

申请号：US14057170

申请日：2013-10-18

Applicant: Sandia Corporation

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel ,  Robert J. Meagher

IPC: B01L3/00 ,  B81B1/00 ,  C23F1/02 ,  G01N33/50 ,  B01F3/08 ,  B01F5/04 ,  B01F13/00 ,  F15D1/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of making micropores of a desired height and/or width between two isotropic wet etched features in a substrate which comprises single-level isotropic wet etching the two features using an etchant and a mask distance that is less than 2× a set etch depth. Also disclosed herein are methods using the micropores and microfluidic devices comprising the micropores.

公开(公告)号：US09394164B2

公开(公告)日：2016-07-19

申请号：US13827928

申请日：2013-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Hau Wu ,  Kuei-Sung Chang

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2207/012 ,  B81B2207/015 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/036

Abstract: MEMS structures and methods utilizing a locker film are provided. In an embodiment a locker film is utilized to hold and support a moveable mass region during the release of the moveable mass region from a surrounding substrate. By providing additional support during the release of the moveable mass, the locker film can reduce the amount of undesired movement that can occur during the release of the moveable mass, and preventing undesired etching of the sidewalls of the moveable mass.

Abstract translation: 提供了使用更衣室膜的MEMS结构和方法。 在一个实施例中，使用更衣膜来在可移动质量区域与周围基底的释放期间保持和支撑可移动质量区域。 通过在可移动质量块的释放期间提供额外的支撑，更衣室膜可以减少在可移动质量块的释放期间可能发生的不期望的运动的量，并且防止可移动质量块的侧壁的不期望的蚀刻。

公开(公告)号：US20160200568A1

公开(公告)日：2016-07-14

申请号：US14914215

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, LP

Inventor： Patrick Wayne Sadik ,  Roger A. McKay

IPC: B81C1/00 ,  B41J2/16

CPC classification number: B81C1/00063 ,  B41J2/162 ,  B41J2/1626 ,  B81B2201/052 ,  B81C2201/0115 ,  B81C2201/0133 ,  B81C2201/0181

Abstract: An example provides a method including sputtering a metal catalyst onto a substrate, exposing the substrate to a solution that reacts with the metal catalyst to form a plurality of pores in the substrate, and etching the substrate to remove the plurality of pores to form a recess in the substrate.

公开(公告)号：US20160107885A1

公开(公告)日：2016-04-21

申请号：US14862504

申请日：2015-09-23

Applicant: UNIVERSITAET STUTTGART

Inventor： PATRICK SCHALBERGER ,  NORBERT FRUEHAUF ,  MARCUS HERRMANN

IPC: B81C1/00 ,  H01L21/44 ,  H01L21/465 ,  H01L21/28 ,  H01L29/66 ,  H01L21/306

CPC classification number: B81C1/00246 ,  B81C2201/0133 ,  B81C2203/0742 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/44 ,  H01L21/465 ,  H01L29/1604 ,  H01L29/24 ,  H01L29/247 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/872

Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

Abstract translation: 用于在非晶或多晶衬底上与微机械部件，其它有源电气部件或两者一起制造薄膜晶体管的方法包括将薄膜晶体管和其它部件设置在衬底的不同区域上。

公开(公告)号：US20150050746A1

公开(公告)日：2015-02-19

申请号：US14527039

申请日：2014-10-29

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Michael D. HENRY ,  Andrew P. HOMYK ,  Axel SCHERER ,  Thomas A. TOMBRELLO ,  Sameer WALAVALKAR

IPC: G01N1/40

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

Abstract translation: 描述了制造高纵横比探针和变形微柱和纳米柱的方法。 还描述了聚合物在变形纳米柱和微柱体中的使用。

公开(公告)号：US20140329722A1

公开(公告)日：2014-11-06

申请号：US14331651

申请日：2014-07-15

Applicant: Sandia Corporation

Inventor： Thomas D. Perroud ,  Kamlesh D. Patel

IPC: G01N33/50

CPC classification number: G01N33/5005 ,  B01F3/0807 ,  B01F5/0471 ,  B01F13/0059 ,  B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L3/502776 ,  B01L3/502784 ,  B01L2200/0668 ,  B01L2300/0816 ,  B01L2300/0864 ,  B01L2400/0688 ,  B81B2201/058 ,  B81C1/00047 ,  B81C1/00087 ,  B81C1/00119 ,  B81C1/00404 ,  B81C2201/0133 ,  B81C2201/0142 ,  Y10T137/9464 ,  Y10T428/24479

Abstract: Disclosed herein are methods of immobilizing a particle which comprise focusing the flow of a sample fluid containing the particle into a virtual channel which flows towards an unoccupied hydrodynamic trap in a microfluidic channel such that the particle flows into the hydrodynamic trap and becomes immobilized therein. Also disclosed are microfluidic devices which comprise at least one microchannel having at least one hydrodynamic trap, at least one focusing fluid inlet, said focusing fluid inlet is upstream of the hydrodynamic trap such that a focusing fluid introduced therein results in a virtual channel of a sample fluid when present which preferentially flows toward the hydrodynamic trap.

Abstract translation: 本文公开了固定颗粒的方法，其包括将含有颗粒的样品流体的流动聚焦到虚拟通道中，该虚拟通道朝向微流体通道中的未占据的流体动力阱捕获，使得颗粒流入流体动力阱并固定在其中。 还公开了微流体装置，其包括具有至少一个流体动力捕集器，至少一个聚焦流体入口的至少一个微通道，所述聚焦流体入口在流体动力捕集器的上游，使得其中引入的聚焦流体导致样品的虚拟通道 存在时优先流向流体动力阱的流体。