公开(公告)号：US20170152137A1

公开(公告)日：2017-06-01

申请号：US15357316

申请日：2016-11-21

Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives

Inventor： Jean-Louis PORNIN ,  Xavier BAILLIN

IPC: B81C1/00

CPC classification number: B81C1/00333 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/056 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0154

Abstract: Method for encapsulating a microelectronic device, comprising the following steps: producing a sacrificial portion covering the device; producing a cover covering the sacrificial portion, comprising two superimposed layers of separate materials and having different residual stresses and/or coefficients of thermal expansion; etching, through the cover, of a trench of which the pattern comprises a curve and/or two straight non-parallel segments; etching of the sacrificial portion through the trench; depositing a sealing material on the trench; in which, during the etching of the sacrificial portion, a portion of the cover defined by the trench deforms under the effect of a mechanical stress generated by the residual stresses and/or a thermal expansion of the layers of the cover and increases the dimensions of the trench, this stress being eliminated before the sealing of the trench.

公开(公告)号：US20170152136A1

公开(公告)日：2017-06-01

申请号：US15429636

申请日：2017-02-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

公开(公告)号：US20170144883A1

公开(公告)日：2017-05-25

申请号：US15318969

申请日：2014-06-16

Applicant: EPCOS AG ,  Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： Gudrun HENN ,  Marcel GIESEN ,  Arnoldus DEN DEKKER ,  Jean-Louis PORNIN ,  Damien SAINT-PATRICE ,  Bruno REIG

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00293 ,  B81B7/0041 ,  B81B2203/0315 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

公开(公告)号：US20170142525A1

公开(公告)日：2017-05-18

申请号：US14941220

申请日：2015-11-13

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Alfons Dehe

IPC: H04R19/04 ,  H04R7/12 ,  B81C1/00 ,  H04R31/00 ,  B81B3/00 ,  H04R3/00 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B3/0008 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R3/00 ,  H04R7/122 ,  H04R19/005 ,  H04R31/00 ,  H04R31/003 ,  H04R2207/00

Abstract: According to an embodiment, a method of operating a microelectromechanical systems (MEMS) transducer that has a membrane includes transducing between out-of-plane deflection of the membrane and voltage on a first pair of electrostatic drive electrodes using the first pair of electrostatic drive electrodes. The first pair of electrostatic drive electrodes is formed on the membrane extending in an out-of-plane direction and form a variable capacitance between the first pair of electrostatic drive electrodes.

公开(公告)号：US09637373B2

公开(公告)日：2017-05-02

申请号：US14963892

申请日：2015-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20170113921A1

公开(公告)日：2017-04-27

申请号：US15333381

申请日：2016-10-25

Applicant: Robert Bosch GmbH

Inventor： Achim Breitling ,  Frank Reichenbach ,  Jochen Reinmuth ,  Julia Amthor

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0051 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00293 ,  B81C1/00325 ,  B81C2201/013 ,  B81C2203/0145

Abstract: A method for manufacturing a micromechanical component including a substrate and including a cap, which is connected to the substrate and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. An access opening connecting the first cavity to surroundings of the micromechanical component is formed in the substrate or in the cap. The first pressure and/or the first chemical composition is adjusted in the first cavity. The access opening is sealed by introducing energy or heat via laser into an absorbing part of the substrate or the cap. During the step for forming the access opening, a first access opening section is formed generally perpendicularly to a surface of the substrate or the cap, and a second access opening section is formed generally perpendicularly to and in parallel to the surface.

公开(公告)号：US09617150B2

公开(公告)日：2017-04-11

申请号：US14049988

申请日：2013-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81C3/00 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/0035 ,  B81B7/0041 ,  B81C1/00793 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.

公开(公告)号：US20170073217A1

公开(公告)日：2017-03-16

申请号：US15366495

申请日：2016-12-01

Applicant: INVENSENSE, INC.

Inventor： Peter SMEYS ,  Jong Il SHIN ,  Jongwoo SHIN

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B2207/012 ,  B81B2207/094 ,  B81C1/00293 ,  B81C2201/013 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/035 ,  B81C2203/0792

Abstract: A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.

Abstract translation: 公开了MEMS器件。 MEMS器件包括第一衬底。 在第一基板内形成至少一个结构。 第一衬底包括至少一个第一导电焊盘。 MEMS器件还包括第二衬底。 第二基板包括钝化层。 钝化层包括多个层。 多个层的顶层包括除气阻挡层。 至少一个第二导电焊盘和至少一个电极耦合到顶层。 至少一个第一导电焊盘耦合到所述至少一个第二导电焊盘。

公开(公告)号：US20170036906A1

公开(公告)日：2017-02-09

申请号：US15297661

申请日：2016-10-19

Applicant: MKS Instruments, Inc.

Inventor： Lei Gu ,  Stephen F. Bart

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

Abstract translation: 公开了可应用于需要气密密封并且可以简单制造的MEMS传感器的应力消除结构和方法。 所述系统包括具有第一表面和第二表面的传感器，所述第二表面远离所述第一表面设置，所述第二表面还远离封装表面设置并位于所述第一表面和所述封装表面之间， 支撑构件，每个支撑构件从第二表面延伸到包装表面，支撑构件设置在第二表面的一部分上并且可操作地连接到第二表面。 支撑构件被配置为减少由包传感器相互作用产生的应力。

公开(公告)号：US09546090B1

公开(公告)日：2017-01-17

申请号：US14826449

申请日：2015-08-14

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Jia Jie Xia ,  Nagarajan Ranganathan ,  Rakesh Kumar ,  Aveek Nath Chatterjee

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C1/00253 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2201/053 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

Abstract translation: 提供了用于制造MEMS器件和CMOS器件的集成MEMS-CMOS器件和方法。 用于制造MEMS器件和CMOS器件的示例性方法包括在半导体衬底的第一侧中和/或之上形成CMOS器件。 此外，该方法包括在半导体衬底的第二面内和/或下方形成MEMS器件。 半导体衬底的第二面与半导体衬底的第一侧相对。