Apparatus and method for detecting arcs
    211.
    发明授权
    Apparatus and method for detecting arcs 失效
    电弧检测装置及方法

    公开(公告)号:US08332170B2

    公开(公告)日:2012-12-11

    申请号:US12772565

    申请日:2010-05-03

    Abstract: The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.

    Abstract translation: 在用于制造半导体或LCD面板的等离子体处理室中检测电弧的装置包括:用于感测电弧的传感器模块; 处理器模块,用于处理来自传感器模块的数据; 其中传感器模块包括RGB颜色传感器,用于感测在室中发生的电弧的颜色数据,RGB颜色传感器是可感测到电弧的红色或绿色或蓝色中的至少一种的传感器,该装置通过 感测电弧的颜色和色度和亮度的数据。

    DEVICE FOR PREVENTING INTENSITY REDUCTION OF OPTICAL SIGNAL, OPTICAL EMISSION SPECTROMETER, OPTICAL INSTRUMENT, AND MASS SPECTROMETER INCLUDING THE SAME
    213.
    发明申请
    DEVICE FOR PREVENTING INTENSITY REDUCTION OF OPTICAL SIGNAL, OPTICAL EMISSION SPECTROMETER, OPTICAL INSTRUMENT, AND MASS SPECTROMETER INCLUDING THE SAME 有权
    用于防止光信号强度降低的装置,光学发射光谱仪,光学仪器和包括其中的质谱仪

    公开(公告)号:US20120120395A1

    公开(公告)日:2012-05-17

    申请号:US13293265

    申请日:2011-11-10

    Applicant: Jae Won HAHN

    Inventor: Jae Won HAHN

    Abstract: A device for a device for preventing the intensity reduction of an optical signal, an optical emission spectrometer, an optical instrument, and a mass spectrometer including the same are provided. The device for preventing the intensity reduction includes a shielding filter which has a mesh structure capable of blocking RF electromagnetic waves radiated from a plasma field for a wafer processing, is installed in the front of an optical window of an optical emission spectrometer for measuring the plasma field from an emission spectrum image of the plasma field, and collects charging particles passing through the mesh.

    Abstract translation: 提供了用于防止光信号强度降低的装置的装置,光发射光谱仪,光学仪器和包括其的质谱仪。 用于防止强度降低的装置包括具有能够阻挡从用于晶片处理的等离子体场辐射的RF电磁波的网格结构的屏蔽滤波器,安装在用于测量等离子体的光发射光谱仪的光学窗口的前面 从等离子体场的发射光谱图像中收集通过网格的带电粒子。

    System and Method for Combined Raman and LIBS Detection with Targeting
    214.
    发明申请
    System and Method for Combined Raman and LIBS Detection with Targeting 有权
    用于组合拉曼和LIBS检测的系统和方法

    公开(公告)号:US20120062874A1

    公开(公告)日:2012-03-15

    申请号:US13209670

    申请日:2011-08-15

    Abstract: A system and method for locating and identifying unknown samples. A targeting mode may be utilized to scan regions of interest for potential unknown materials. This targeting mode may interrogate regions of interest using SWIR and/or fluorescence spectroscopic and imaging techniques. Unknown samples detected in regions of interest may be further interrogated using a combination of Raman and LIBS techniques to identify the unknown samples. Structured illumination may be used to interrogate an unknown sample. Data sets generated during interrogation may be compared to a reference database comprising a plurality of reference data sets, each associated with a known material. The system and method may be used to identify a variety of materials including: biological, chemical, explosive, hazardous, concealment, and non-hazardous materials.

    Abstract translation: 用于定位和识别未知样品的系统和方法。 可以利用定位模式来扫描潜在未知材料的感兴趣区域。 这种瞄准模式可以使用SWIR和/或荧光光谱和成像技术来询问感兴趣的区域。 可以使用拉曼和LIBS技术的组合进一步询问在感兴趣区域中检测到的未知样品,以识别未知样品。 结构化照明可用于询问未知样品。 在询问期间生成的数据集可以与包括多个参考数据集的参考数据库进行比较,每个参考数据集与已知的资料相关联。 该系统和方法可用于识别各种材料,包括:生物,化学,爆炸,危险,隐蔽和非危险材料。

    Calibration of a radiometric optical monitoring system used for fault detection and process monitoring
    216.
    发明授权
    Calibration of a radiometric optical monitoring system used for fault detection and process monitoring 有权
    用于故障检测和过程监控的辐射光学监测系统的校准

    公开(公告)号:US08125633B2

    公开(公告)日:2012-02-28

    申请号:US12151449

    申请日:2008-05-06

    CPC classification number: G01J3/443 G01J3/28 G01J2003/2866

    Abstract: The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber. Alternatively, the reference spectrograph can be calibrated to the local primary standard while optically coupled to the plasma chamber. There, the local primary standard calibration light source is temporarily positioned within the plasma chamber, or in a light chamber disposed along the interior of the chamber for calibrating the reference spectrograph. Other spectrographs can be calibrated to the reference spectrograph while coupled to the plasma chamber with the local primary standard calibration light source, thereby calibrating every component in the entire optical path to the reference spectrograph.

    Abstract translation: 本发明涉及用于故障检测和过程监测中的光谱设备的辐射校准的系统和方法。 最初,将参考光谱仪校准为局部主要标准(具有已知光谱强度且可追溯到参考标准的校准光源)。 然后从参考光谱仪而不是本地主要校准标准校准其他光谱仪。 这是通过用参考光谱仪和要校准的光谱仪来观察光源来实现的。 将要校准的光谱仪的输出与参考光谱仪的输出进行比较,然后进行调整以匹配该输出。 本校准过程可以分两个阶段执行,第一阶段是用参考光谱仪校准的光谱仪,然后在等离子体腔室内对窄带光源进行微调。 或者,参考光谱仪可以被校准为局部初级标准,同时光学耦合到等离子体室。 在那里,局部主标准校准光源临时定位在等离子体室内,或者沿着室内设置的光室中,用于校准参考光谱仪。 当使用本地主要标准校准光源耦合到等离子体室时,可以将其他光谱仪校准为参考光谱仪,从而将整个光学路径中的每个分量校准到参考光谱仪。

    Method and Apparatus for Calibrating Optical Path Degradation Useful for Decoupled Plasma Nitridation Chambers
    217.
    发明申请
    Method and Apparatus for Calibrating Optical Path Degradation Useful for Decoupled Plasma Nitridation Chambers 审中-公开
    用于校准光路径退化的方法和装置,其用于去耦等离子体氮化室

    公开(公告)号:US20120015455A1

    公开(公告)日:2012-01-19

    申请号:US13188866

    申请日:2011-07-22

    Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

    Abstract translation: 公开了使用校准光谱仪来匹配半导体处理室的方法。 在一个实施例中,测量参考室中的过程和老化室中的过程的等离子体属性。 通过使用校准光源,可以通过确定校正因子来比较与参考室中的光路相当的光路和老化室中的光路。 应用校正因子来调节通过老化室中的光路的等离子体辐射的测量强度。 将参考室中的等离子体辐射的测量强度与老化室中调整的测量强度进行比较,提供改变的室条件的指示。 可以使用两个强度之间的变化幅度来调整工艺参数,以从老化室产生与参考室相匹配的处理过的衬底。

    SPECTROMETER, SPECTROMETRY, AND SPECTROMETRY PROGRAM
    218.
    发明申请
    SPECTROMETER, SPECTROMETRY, AND SPECTROMETRY PROGRAM 有权
    光谱仪,光谱仪和光谱计划

    公开(公告)号:US20110255085A1

    公开(公告)日:2011-10-20

    申请号:US13141152

    申请日:2009-09-08

    Abstract: A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value Φ0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors β, γ regarding stray light in the reference measurement, an analysis value Φ of the luminescence quantum yield with the effect of stray light reduced by Φ=βΦ0+γ. This realizes a spectroscopic measurement apparatus, a measurement method, and a measurement program which can reduce the effect of stray light generated in a spectrometer.

    Abstract translation: 分光测量装置1A包括其中位于样品S的积分球20,从样品S分散被测光并获得波长谱的光谱分析仪30和数据分析器50.分析器50包括物体 范围设定部,其设定与激发光对应的第一对象范围和与波长光谱中的来自样品S的发光对应的第二对象范围,以及确定样品S的发光量子产率的样本信息分析部, 通过参考测量和样品测量的结果,发光量子产率的测量值Φ0,并且通过使用参考测量中关于杂散光的因子&bgr;γ来确定发光量子产率的分析值Φ,其效果为 杂散光减少Φ=&bgr;Φ0+γ。 这实现了可以降低在光谱仪中产生的杂散光的影响的光谱测量装置,测量方法和测量程序。

    PROCESS MONITORING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS INCLUDING THE SAME
    219.
    发明申请
    PROCESS MONITORING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
    过程监控装置和半导体处理装置,包括它们

    公开(公告)号:US20110222058A1

    公开(公告)日:2011-09-15

    申请号:US13048387

    申请日:2011-03-15

    CPC classification number: G01J3/443 H01J37/32834 H01J37/32935 H01J37/32972

    Abstract: Provided are a process monitoring device for monitoring semiconductor device manufacturing processes, a semiconductor process apparatus including the same, and a process monitoring method thereof. The process monitoring device generates plasma from the exhaust gas of the process chamber using DBD-type electrodes and analyzes a spectrum of emission light from the plasma, thereby monitoring the semiconductor manufacturing process performed in the process chamber.

    Abstract translation: 提供了一种用于监控半导体器件制造工艺的工艺监控装置,包括该工艺监测装置的半导体处理装置及其工艺监视方法。 过程监控装置使用DBD型电极从处理室的排气产生等离子体,并分析来自等离子体的发射光谱,从而监测在处理室中执行的半导体制造过程。

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