Abstract:
The apparatus for detecting arc occurred in chamber for plasma treatment used for manufacturing semiconductor or LCD panel comprises, a sensor module for sensing the arc; a processor module for processing data from the sensor module; wherein the sensor module includes RGB color sensor for sensing color data of the arc occurred in the chamber, the RGB color sensor is a sensor sensable at least one of red color or green color or blue color of the arc, the apparatus detects the arc by sensing data of color and chroma and brightness of the arc.
Abstract:
An optical emission spectroscopic system contains multiple distinct light paths that provide increased light to a spectrometer, thereby increasing sensitivity and signal-to-noise of the system.
Abstract:
A device for a device for preventing the intensity reduction of an optical signal, an optical emission spectrometer, an optical instrument, and a mass spectrometer including the same are provided. The device for preventing the intensity reduction includes a shielding filter which has a mesh structure capable of blocking RF electromagnetic waves radiated from a plasma field for a wafer processing, is installed in the front of an optical window of an optical emission spectrometer for measuring the plasma field from an emission spectrum image of the plasma field, and collects charging particles passing through the mesh.
Abstract:
A system and method for locating and identifying unknown samples. A targeting mode may be utilized to scan regions of interest for potential unknown materials. This targeting mode may interrogate regions of interest using SWIR and/or fluorescence spectroscopic and imaging techniques. Unknown samples detected in regions of interest may be further interrogated using a combination of Raman and LIBS techniques to identify the unknown samples. Structured illumination may be used to interrogate an unknown sample. Data sets generated during interrogation may be compared to a reference database comprising a plurality of reference data sets, each associated with a known material. The system and method may be used to identify a variety of materials including: biological, chemical, explosive, hazardous, concealment, and non-hazardous materials.
Abstract:
A handheld or portable detection system with a high degree of specificity and accuracy, capable of use at small and substantial standoff distances (e.g., greater than 12 inches) is utilized to identify specific substances and mixtures thereof in order to provide information to officials for identification purposes and assists in determinations related to the legality, hazardous nature and/or disposition decision of such substance(s). The system uses a synchronous detector and visible light filter to enhance detection capabilities.
Abstract:
The present invention is directed to a system and method for radiometric calibration of spectroscopy equipment utilized in fault detection and process monitoring. Initially, a reference spectrograph is calibrated to a local primary standard (a calibrated light source with known spectral intensities and traceable to a reference standard). Other spectrographs are then calibrated from the reference spectrograph rather than the local primary calibration standard. This is accomplished by viewing a light source with both the reference spectrograph and the spectrograph to be calibrated. The output from the spectrograph to be calibrated is compared to the output of the reference spectrograph and then adjusted to match that output. The present calibration process can be performed in two stages, the first with the spectrographs calibrated to the reference spectrograph and then are fine tuned to a narrow band light source at the plasma chamber. Alternatively, the reference spectrograph can be calibrated to the local primary standard while optically coupled to the plasma chamber. There, the local primary standard calibration light source is temporarily positioned within the plasma chamber, or in a light chamber disposed along the interior of the chamber for calibrating the reference spectrograph. Other spectrographs can be calibrated to the reference spectrograph while coupled to the plasma chamber with the local primary standard calibration light source, thereby calibrating every component in the entire optical path to the reference spectrograph.
Abstract:
Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.
Abstract:
A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value Φ0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors β, γ regarding stray light in the reference measurement, an analysis value Φ of the luminescence quantum yield with the effect of stray light reduced by Φ=βΦ0+γ. This realizes a spectroscopic measurement apparatus, a measurement method, and a measurement program which can reduce the effect of stray light generated in a spectrometer.
Abstract:
Provided are a process monitoring device for monitoring semiconductor device manufacturing processes, a semiconductor process apparatus including the same, and a process monitoring method thereof. The process monitoring device generates plasma from the exhaust gas of the process chamber using DBD-type electrodes and analyzes a spectrum of emission light from the plasma, thereby monitoring the semiconductor manufacturing process performed in the process chamber.
Abstract:
An apparatus and a method for optically analyzing a sample are provided. The apparatus includes a first optical device that transmits a narrow waveband of light and has a first filter and a first monochromator that provide different paths for the narrow waveband of the light. The apparatus may also include a light source that generates the light as broadband excitation light, in which case the first optical device transmits a narrow waveband of the broadband excitation light through the first filter or the first monochromator. Further, the apparatus may include a second optical device that directs the narrow waveband of the broadband excitation light onto the sample and receives emission light from the sample, a third optical device that transmits a narrow waveband of the emission light, and a detector that converts the narrow waveband of the emission light into an electrical signal.