公开(公告)号：US20180083108A1

公开(公告)日：2018-03-22

申请号：US15708156

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hsueh Lu ,  Hsin-Chiao Fang ,  Chi-Hao Cheng ,  Chih-Feng Lu ,  Chi-Feng Huang

IPC: H01L29/205 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L29/205 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0≦x≦1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm−3 and carbon having a concentration greater than 5×1017 cm−3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0≦y≦1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

公开(公告)号：US20180006000A1

公开(公告)日：2018-01-04

申请号：US15688844

申请日：2017-08-28

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Yen Chen ,  Yun-Li Li ,  Po-Jen Su

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L25/0753 ,  H01L24/14 ,  H01L25/04 ,  H01L25/042 ,  H01L25/0655 ,  H01L25/072 ,  H01L25/0756 ,  H01L25/112 ,  H01L25/115 ,  H01L25/117 ,  H01L27/156 ,  H01L27/3209 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

公开(公告)号：US09801274B2

公开(公告)日：2017-10-24

申请号：US14927477

申请日：2015-10-30

Applicant: Genesis Photonics Inc.

Inventor： Hao-Chung Lee ,  Yu-Feng Lin ,  Meng-Ting Tsai

IPC: H01L33/62 ,  H05K1/05 ,  H05K1/02 ,  H05K3/34

CPC classification number: H05K1/05 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K1/0203 ,  H05K3/3436 ,  H05K2201/10106

Abstract: A light emitting device includes a light source, a light source carrier and a circuit board. The circuit board is configured to provide power to the light source via the light source carrier. The circuit board includes a metal substrate having an upper surface, the upper surface including a first electrode area, a second electrode area and a heat conduction area; a first metal electrode formed on the first electrode area; a first insulation layer formed between the first metal electrode and the metal substrate; a second metal electrode formed on the second electrode area; a second insulation layer formed between the second metal electrode and the metal substrate; and a solder resist layer covering the upper surface of the metal substrate; wherein the heat conduction area is exposed from the solder resist layer, and the heat conduction area is connected to the light source carrier.

公开(公告)号：US09780255B2

公开(公告)日：2017-10-03

申请号：US14850970

申请日：2015-09-11

Applicant: Genesis Photonics Inc.

Inventor： Yen-Lin Lai ,  Jyun-De Wu ,  Yu-Chu Li

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/14 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm−3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

公开(公告)号：US20170256673A1

公开(公告)日：2017-09-07

申请号：US15499913

申请日：2017-04-28

Applicant: Genesis Photonics Inc.

Inventor： Yen-Lin Lai ,  Shen-Jie Wang

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0

公开(公告)号：US09640712B2

公开(公告)日：2017-05-02

申请号：US14732798

申请日：2015-06-08

Applicant: Genesis Photonics Inc.

Inventor： Yen-Lin Lai ,  Shen-Jie Wang

IPC: H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/0025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01L33/325

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0

公开(公告)号：US20170062664A1

公开(公告)日：2017-03-02

申请号：US15351380

申请日：2016-11-14

Applicant: Genesis Photonics Inc.

Inventor： Yu-Feng Lin ,  Po-Tsun Kuo ,  Meng-Ting Tsai

IPC: H01L33/48 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L33/486 ,  H01L33/502 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/16 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A LED package structure including a carrier substrate, a flip-chip LED and a molding compound is provided. The carrier substrate includes a main body and a patterned conductive layer embedded in the main body. The main body is composed of polymer material. The main body has a cavity, and a bottom surface of the cavity is aligned with an upper surface of the patterned conductive layer. A difference in coefficient of thermal expansion between the main body in a rubbery state and the patterned conductive layer is smaller than 30 ppm/° C. The flip-chip LED is disposed inside the cavity and electrically connected to the patterned conductive layer. The molding compound is disposed inside the cavity and encapsulates the flip-chip LED. A vertical distance between a top surface of the molding compound and the bottom surface of the cavity is smaller than or equal to a depth of the cavity.

Abstract translation: 提供了包括载体基板，倒装芯片LED和模塑料的LED封装结构。 载体基板包括主体和嵌入主体中的图案化导电层。 主体由聚合物材料组成。 主体具有空腔，并且空腔的底表面与图案化导电层的上表面对齐。 橡胶状态下的主体与图案化的导电层之间的热膨胀系数的差小于30ppm /℃。倒装芯片LED设置在空腔内并与图案化的导电层电连接。 模塑料置于空腔内并封装倒装芯片LED。 模制化合物的顶表面和腔的底表面之间的垂直距离小于或等于腔的深度。

公开(公告)号：US20160343910A1

公开(公告)日：2016-11-24

申请号：US15135584

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

Abstract translation: 发光装置包括基板和第一发光单元。 第一发光单元设置在基板上，并且包括第一半导体层，第一发光层和第二半导体层。 第一半导体层设置在基板上。 第一发光层设置在第一半导体层和第二半导体层之间。 第二半导体层设置在第一发光层上。 第一半导体层具有第一侧壁和第二侧壁。 第一角度在衬底和第一侧壁之间。 第二角度在衬底和第二侧壁之间。 第一角度小于第二角度。

公开(公告)号：US20160293806A1

公开(公告)日：2016-10-06

申请号：US15088123

申请日：2016-04-01

Applicant: Genesis Photonics Inc.

Inventor： Hao-Chung Lee ,  Yu-Feng Lin

IPC: H01L33/50 ,  H01L33/54 ,  F21S8/10 ,  H01L33/48

CPC classification number: H01L33/502 ,  H01L33/486 ,  H01L33/505 ,  H01L33/54

Abstract: A light-emitting diode (LED) package including a rectangular carrier, an LED chip, and an encapsulant is provided. The rectangular carrier has an upper surface. The LED chip is mounted on the upper surface and is electrically connected to the rectangular carrier. The encapsulant has a curved convex surface and covers the entire upper surface and the LED chip. The encapsulant is doped with a phosphor material for converting at least parts of light emitted from the LED chip. The encapsulant doped with the phosphor material is visually neon orange when the LED chip does not emit the light.

Abstract translation: 提供了包括矩形载体，LED芯片和密封剂的发光二极管（LED）封装。 矩形载体具有上表面。 LED芯片安装在上表面上并与矩形载体电连接。 密封剂具有弯曲的凸面并且覆盖整个上表面和LED芯片。 该密封剂掺杂有用于转换从LED芯片发射的光的至少一部分的荧光体材料。 当LED芯片不发光时，掺杂有磷光体材料的密封剂视觉上呈霓虹橙色。

公开(公告)号：US20160284666A1

公开(公告)日：2016-09-29

申请号：US15073707

申请日：2016-03-18

Applicant: Genesis Photonics Inc.

Inventor： Hao-Chung Lee ,  Yu-Feng Lin ,  Xun-Xain Zhan

IPC: H01L25/065 ,  H01L33/56 ,  H01L33/50 ,  H01L33/48 ,  H01L33/62 ,  H01L27/15 ,  H01L33/64 ,  H01L33/54

CPC classification number: H01L25/0655 ,  H01L23/562 ,  H01L23/60 ,  H01L25/0657 ,  H01L25/0753 ,  H01L25/0756 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/48 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/18161 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and a second metal layer disposed on the second surface. The first metal layer includes a closed-loop trench. A part of the second metal layer is electrically connected to the first metal layer via the through holes. The through holes are positioned at an inner part the closed-loop trench.

Abstract translation: 提供封装基板。 封装基板包括具有第一表面和与第一表面相对的第二表面的基底层，穿过基底层的多个通孔，设置在第一表面上的第一金属层和设置在第二表面上的第二金属层 表面。 第一金属层包括闭环沟槽。 第二金属层的一部分经由通孔与第一金属层电连接。 通孔位于闭环沟槽的内部。