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公开(公告)号：US20180261727A1
公开(公告)日：2018-09-13
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US10050183B2
公开(公告)日：2018-08-14
申请号：US15405323
申请日：2017-01-13
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yu-Feng Lin , Yi-Ru Huang
Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.
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公开(公告)号：US20180190887A1
公开(公告)日：2018-07-05
申请号：US15908779
申请日：2018-02-28
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang
Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.
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公开(公告)号：US20160276554A1
公开(公告)日：2016-09-22
申请号：US15168218
申请日：2016-05-30
Applicant: Genesis Photonics Inc.
Inventor： Kuan-Chieh Huang , Shao-Ying Ting , Jing-En Huang , Yi-Ru Huang
CPC classification number: H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.
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公开(公告)号：US20160247788A1
公开(公告)日：2016-08-25
申请号：US15045426
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Chih-Chung Kuo , Yi-Ru Huang , Chih-Ming Shen , Kuan-Chieh Huang , Jing-En Huang
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.
Abstract translation: 本发明涉及一种高压发光二极管（HV LED）及其制造方法。 在基板上形成串联，并联或串联并联的多个LED管芯。 LED芯片的一部分的第一半导体层的侧表面与衬底的侧表面对准，使得在LED管芯和衬底的边缘之间不保留露出衬底的空间，衬底的比例 被LED芯片覆盖的面积增加，即，每单位面积的发光面积增加，HV LED的光提取效率提高。
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Patent Agency Ranking
公开(公告)号：US20160240732A1
公开(公告)日：2016-08-18
申请号：US15045264
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L33/10
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
Abstract translation: 发光部件包括外延结构，粘合层，第一反射层，第二反射层，阻挡层，第一电极和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 粘合剂层设置在外延结构的第二半导体层上。 第一反射层设置在粘合剂层上。 第二反射层设置在第一反射层上并延伸到粘合剂层上。 第二反射层的投影面积大于第一反射层的投影面积。 阻挡层设置在第二反射层上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。
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公开(公告)号：US09236542B1
公开(公告)日：2016-01-12
申请号：US14582207
申请日：2014-12-24
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang
Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of λ/4n, λ is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.
Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及布置在所述透明导光结构上的第一防反射膜，其中所述第一抗反射膜的厚度为λ/ 4n的奇数倍，λ是从所述发光单元经过所述封装单元的光的波长 ，n为第一防反射膜的折射率。
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28.发明授权Light-emitting device with graphene enhanced thermal properties and secondary wavelength converting light shade 有权具有石墨烯的发光装置增强了热性能和二次波长转换光阴公开(公告)号：US09175819B2
公开(公告)日：2015-11-03
申请号：US14282264
申请日：2014-05-20
Applicant: Genesis Photonics Inc.
Inventor： Kuan-Chieh Huang
CPC classification number: F21K9/56 , F21K9/64 , F21V29/506 , F21V29/87 , F21V29/90 , H01L33/644
Abstract: A light-emitting device includes a light-emitting component. The light-emitting component includes a circuit board, a light-emitting diode which is mounted on and electrically connected to the circuit board, a wavelength-converting shell which covers the light-emitting diode, and a heat conductive layer which is formed on the wavelength-converting shell and which includes graphene.
Abstract translation: 发光装置包括发光部件。 发光元件包括电路板，安装在电路板上并与之电连接的发光二极管，覆盖发光二极管的波长转换外壳和形成在发光二极管上的导热层 波长转换壳，其中包括石墨烯。
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公开(公告)号：US20200052159A1
公开(公告)日：2020-02-13
申请号：US16659548
申请日：2019-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20190214374A1
公开(公告)日：2019-07-11
申请号：US16352792
申请日：2019-03-13
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L25/075 , H01L33/10 , H01L33/56 , H01L33/46 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/58 , H01L33/42 , H01L33/20 , H01L33/38 , H01L33/40
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
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