-
公开(公告)号：US20160240758A1
公开(公告)日：2016-08-18
申请号：US15045266
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
IPC: H01L33/62
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
Abstract translation: 提供了一种安装在载体基板上并包括半导体外延结构和至少一个电极焊盘结构的发光二极管（LED）。 半导体外延结构电连接到载体衬底。 电极焊盘结构包括共晶层，阻挡层和延伸层。 共晶层适于与载体基底共晶结合。 阻挡层在共晶层和半导体外延结构之间。 阻挡层阻止共晶粘合过程中共晶层的材料的扩散。 扩展层在共晶层和半导体外延结构之间。 延伸层在共晶接合工艺期间降低由基板的热膨胀和收缩产生的LED上的应力，以防止电极焊盘结构破裂，并且保持LED的质量。
-
公开(公告)号：US10734551B2
公开(公告)日：2020-08-04
申请号：US16659548
申请日：2019-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
-
Patent Agency Ranking
公开(公告)号：US20200075821A1
公开(公告)日：2020-03-05
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
IPC: H01L33/60 , H01L33/36 , H01L33/62 , H01L33/14 , H01L25/075
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
-
公开(公告)号：US10453999B2
公开(公告)日：2019-10-22
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
-
公开(公告)号：US20180130926A1
公开(公告)日：2018-05-10
申请号：US15727545
申请日：2017-10-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Sheng-Tsung Hsu , Yu-Chen Kuo , Chih-Ming Shen , Tung-Lin Chuang , Tsung-Syun Huang , Jing-En Huang
CPC classification number: H01L33/382 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.
-
公开(公告)号：US20170309787A1
公开(公告)日：2017-10-26
申请号：US15644969
申请日：2017-07-10
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
-
27.发明授权公开(公告)号：US09705045B2
公开(公告)日：2017-07-11
申请号：US15045488
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
-
-
-
-
-
-
Search Results
27
records
(took 0.019 seconds)
