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21.发明申请公开(公告)号：US20180130795A1
公开(公告)日：2018-05-10
申请号：US15865774
申请日：2018-01-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
IPC: H01L27/06 , H01L27/092 , A61B8/00 , B06B1/02 , B81B3/00 , H01L23/528 , H01L23/522 , H01L21/8238 , H01L21/768 , H01L21/56 , H01L21/3213 , B81C1/00 , B81B7/00
CPC classification number: H01L27/0617 , A61B8/00 , A61B8/4494 , B06B1/02 , B06B1/0292 , B06B2201/51 , B81B3/0021 , B81B7/0006 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/32134 , H01L21/56 , H01L21/768 , H01L21/76838 , H01L21/823871 , H01L23/5226 , H01L23/528 , H01L27/0688 , H01L27/092 , H01L2224/16225
Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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22.发明申请公开(公告)号：US20180107854A1
公开(公告)日：2018-04-19
申请号：US15853396
申请日：2017-12-22
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Mike Daneman , Sanjiv Kapoor
CPC classification number: G06K9/0002 , B06B1/0666 , B06B1/067 , B06B2201/70 , B81B7/007 , B81B2201/0271 , B81B2201/032 , B81B2203/0127 , B81B2207/012 , B81B2207/015 , B81C1/00238 , B81C1/00246 , B81C1/00301 , B81C2201/0105 , B81C2201/0109 , B81C2203/035 , B81C2203/036 , B81C2203/0792 , G01H11/08
Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
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公开(公告)号：US20180086625A1
公开(公告)日：2018-03-29
申请号：US15698604
申请日：2017-09-07
Applicant: The Government of the United States of America, as Represented by the Secretary of the Navy , The Charles Stark Draper Laboratory, Inc.
Inventor： Francis J. KUB , Karl D. HOBART , Eugene A. IMHOFF , Rachael L. MYERS-WARD , Eugene COOK , Jonathan BERNSTEIN , Marc WEINBERG
IPC: B81B3/00 , B81C1/00 , G01C19/5656 , G01C19/5621 , G01C19/56
CPC classification number: B81B3/0072 , B81B7/0016 , B81B7/0019 , B81B2201/0235 , B81B2201/0242 , B81B2201/0271 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0163 , B81B2203/0307 , B81B2203/04 , B81C1/00666 , B81C2201/0132 , B81C2203/036 , G01C19/56 , G01C19/5621 , G01C19/5656 , G01C19/5783
Abstract: Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.
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公开(公告)号：US09910018B2
公开(公告)日：2018-03-06
申请号：US15177977
申请日：2016-06-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US09910017B2
公开(公告)日：2018-03-06
申请号：US15177899
申请日：2016-06-09
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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Patent Agency Ranking
公开(公告)号：US20180054183A2
公开(公告)日：2018-02-22
申请号：US15114734
申请日：2015-02-11
Applicant: Agency for Science, Technology and Research
Inventor： Jinghui Xu , Nan Wang , Yuandong Alex Gu
CPC classification number: H03H9/02409 , B81B2201/0271 , H01H2001/0078 , H03H9/02448 , H03H9/19 , H03H9/2457 , H03H9/2463 , H03H9/56 , H03H2009/02291 , H03H2009/02488
Abstract: According to various embodiments, there is provided a micro-electromechanical resonator, including a substrate with a cavity therein; and a resonating structure suspended over the cavity, the resonating structure having a first end anchored to the substrate, wherein the resonating structure is configured to flex in a flexural mode along a width direction of the resonating structure, wherein the width direction is defined at least substantially perpendicular to a length direction of the resonating structure, wherein the length direction is defined from the first end to a second end of the resonating structure, wherein the second end opposes the first end.
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公开(公告)号：US09866200B2
公开(公告)日：2018-01-09
申请号：US14883400
申请日：2015-10-14
Applicant: Microchip Technology Incorporated
Inventor： Wan-Thai Hsu , John Ryan Clark
CPC classification number: H03H9/2431 , B81B2201/0271 , H03H9/02244 , H03H9/02259 , H03H9/02338 , H03H9/2452 , H03H2009/02251 , H03H2009/02283 , H03H2009/02307 , H03H2009/0233 , H03H2009/02346 , H03H2009/02496
Abstract: A multiple coil spring MEMS resonator includes a center anchor and a resonator body including two or more coil springs extending in a spiral pattern from the center anchor to an outer closed ring. Each pair of coil springs originates from opposing points on the center anchor and extends in the spiral pattern to opposing points on the outer ring. The number of coil springs, the length and the width of the coil springs and the weight of the outer ring are selected to realize a desired resonant frequency.
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公开(公告)号：US20180003678A1
公开(公告)日：2018-01-04
申请号：US15689863
申请日：2017-08-29
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20180002162A1
公开(公告)日：2018-01-04
申请号：US15620619
申请日：2017-06-12
Applicant: InvenSense, Inc.
Inventor： Matthew Thompson , Joseph Seeger
IPC: B81B3/00
CPC classification number: B81B3/0086 , B81B7/02 , B81B2201/014 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2201/036 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81B2207/012 , B81C2203/0792 , H01H1/0036
Abstract: A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).
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公开(公告)号：US20170355598A1
公开(公告)日：2017-12-14
申请号：US15671647
申请日：2017-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou , Chih-Jen Chan , Chia-Shiung Tsai , Ru-Liang Lee , Yuan-Chih Hsieh
CPC classification number: B81C1/00595 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0109 , B81C1/00357 , B81C1/00801 , B81C2201/0132
Abstract: An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.
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