公开(公告)号：US20240120209A1

公开(公告)日：2024-04-11

申请号：US18011837

申请日：2021-12-22

Applicant: Lam Research Corporation

Inventor： Nikhil Dole ,  Takumi Yanagawa ,  Eric A. Hudson ,  Merrett Wong ,  Aniruddha Joi

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/327 ,  H01J2237/3341

Abstract: A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.

公开(公告)号：US11955367B2

公开(公告)日：2024-04-09

申请号：US17474403

申请日：2021-09-14

Applicant: Shibaura Mechatronics Corporation

Inventor： Shohei Tanabe ,  Koji Yoshimura ,  Ryo Matsuhashi

IPC: H01L21/687 ,  H01J37/32 ,  H01J37/34 ,  H01L21/02

CPC classification number: H01L21/68764 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32504 ,  H01J37/3435 ,  H01L21/02274 ,  H01J2237/332

Abstract: A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas G1 in the film deposition chamber.

公开(公告)号：US20240112893A1

公开(公告)日：2024-04-04

申请号：US18534182

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US11935776B2

公开(公告)日：2024-03-19

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L22/26 ,  H01J2237/334 ,  H01L21/68785

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.

公开(公告)号：US20240087856A1

公开(公告)日：2024-03-14

申请号：US18447479

申请日：2023-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon Son ,  Sunggil Kang ,  Kangmin Do ,  Youngsun Kim ,  Younghoo Kim ,  Sangjin An

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45565 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32633 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a process chamber configured to perform plasma treatment, a substrate support in a lower portion of the process chamber and configured to support a substrate, a showerhead in an upper portion of the process chamber and configured to supply a process gas for the plasma treatment toward the substrate, and a baffle surrounding the substrate support. The substrate support functions as a first electrode for generating plasma, the showerhead and the baffle function as a second electrode for generating the plasma, the baffle has a variable height, and an area of the second electrode varies as a height of the baffle varies.

公开(公告)号：US11929233B2

公开(公告)日：2024-03-12

申请号：US17553875

申请日：2021-12-17

Applicant: TRUMPF Huettinger Sp. z o. o.

Inventor： Jakub Swiatnicki ,  Krzysztof Ruda ,  Mateusz Wiosna ,  Grzegorz Toczylowski ,  Jialei Chen

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32568 ,  H01J37/32935

Abstract: A method adjusts an output power of a power supply supplying electrical power to a plasma in a plasma chamber. The method includes: connecting the power supply to at least one electrode in the plasma chamber; transporting one or more substrates relative to the electrode using a substrate carrier; maintaining the plasma by the electrical power; processing the one or more substrates with the plasma; and adjusting the output power based on a parameter related to a distance between a surface of the electrode facing a carrier-substrate-assembly and a surface of the substrate-carrier-assembly facing the electrode.

公开(公告)号：US11915905B2

公开(公告)日：2024-02-27

申请号：US16918299

申请日：2020-07-01

Applicant: SEMES CO., LTD.

Inventor： Hyoungkyu Son ,  Yu Dong Han ,  Hyeon Gyu Kim ,  Seon Ok Kim

IPC: H01J37/32 ,  H01L21/683 ,  H01J37/20

CPC classification number: H01J37/20 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/32715 ,  H01L21/683 ,  H01J2237/334

Abstract: A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.

公开(公告)号：US20240047181A1

公开(公告)日：2024-02-08

申请号：US17641871

申请日：2021-03-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shintarou Nakatani ,  Takamasa Ichino ,  Yuki Kondo

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32715 ,  H01J37/32541 ,  H01J37/32642 ,  H01J37/32082 ,  H01L21/3065 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a sample stage including a placement surface on which a semiconductor wafer is placed, a ring-shaped thin film electrode surrounding the sample stage, and a susceptor ring made of a dielectric covering the thin film electrode, in which the thin film electrode includes a first portion located lower than the rear surface of the semiconductor wafer, a second portion located higher than the main surface of the semiconductor wafer, and a third portion connecting the first portion and the second portion, and the first portion of the thin film electrode has an overlap region that overlaps the semiconductor wafer in a plan view.

公开(公告)号：US11875973B2

公开(公告)日：2024-01-16

申请号：US17666969

申请日：2022-02-08

Applicant: Taiwan Semiconductor Manufacturing Company

Inventor： Shih-Tsung Chen ,  Tsung-Cheng Ho ,  Chien-Yu Wang ,  Yen-Shih Wang ,  Jiun-Rong Pai ,  Yeh-Chieh Wang

IPC: C23C14/58 ,  H01J37/32 ,  C23C14/24 ,  C23C14/34 ,  C23C14/08 ,  C23C14/06 ,  C23C14/02

CPC classification number: H01J37/32477 ,  C23C14/024 ,  C23C14/0694 ,  C23C14/083 ,  C23C14/24 ,  C23C14/34 ,  C23C14/5886 ,  H01J37/32082 ,  H01J37/32568

Abstract: Methods for preparing a void-free protective coating are disclosed herein. The void-free protective coating is used on a dielectric window having a central hole, which is used in a plasma treatment tool. A first protective coating layer is applied to the window, leaving an uncoated annular retreat area around the central hole. The first protective coating layer is polished to produce a flat surface and fill in any voids on the window. A second protective coating layer is then applied upon the flat surface of the first protective coating layer to obtain the void-free coating. This increases process uptime and service lifetime of the dielectric window and the plasma treatment tool.

公开(公告)号：US20240006160A1

公开(公告)日：2024-01-04

申请号：US18142442

申请日：2023-05-02

Applicant: SEMES CO., LTD.

Inventor： Kwangryul KIM ,  Yunsang KIM

IPC: H01J37/32 ,  B23K26/352

CPC classification number: H01J37/32449 ,  H01J37/32568 ,  H01J37/32082 ,  B23K26/352 ,  H01J2237/002 ,  H01J2237/334

Abstract: Provided is a substrate processing apparatus including a chamber including a processing space; a support table provided within the processing space of the chamber and configured to support a substrate; a dielectric plate covering an opening in an upper wall of the chamber; a transparent electrode provided on the dielectric plate; a laser supply head configured to supply a laser beam toward the substrate supported on the support table via the transparent electrode and the dielectric plate; and a cooling device configured to cool the transparent electrode by injecting a cooling gas toward the transparent electrode.