Abstract:
A photo-ionization detector (PID) includes a microprocessor, a first gas detection unit, and a second gas detection unit. The microprocessor controls the first and second gas detection units such that ambient gas always flows through the ionization chamber of one of the gas detection units while the flow of the ambient gas is closed in the ionization chamber of the other one of the gas detection units. The UV lamp converts oxygen in the closed ambient gas to ozone, which removes contamination in the ionization chamber with the closed ambient gas. When the PID includes only one gas detection unit, the microprocessor controls the gas detection unit such that the flow of the ambient gas in the ionization chamber is intermittently interrupted. A method of real-time self-cleaning and measuring of a volatile gas concentration with the PID includes flowing the ambient gas through the ionization chamber of the first gas detection unit, so that the PID measures the volatile gas concentration, and stopping the ambient gas through the ionization chamber of the second gas detection unit so that the ambient gas is closed in the ionization chamber of the second gas detection unit while the ambient gas flows through the ionization chamber of the first gas detection unit. The UV lamp converts oxygen contained in the ambient gas in the ionization chamber of the second gas detection unit to ozone, which removes contamination in the ionization chamber of the second gas detection unit.
Abstract:
An improved ionizable gas or vapor detector device and method are provided which are capable in preferred forms of sampling 4.times.10.sup.-3 cubic meters or more of air sec.sup.-1 and are responsive to ionizable gas fluctuations at a rate of up to 100Hz. Use of the device of the present invention has proved to provide sensitivity to UV ionizable gas or vapor of over 500 times that of prior devices, giving detection of propylene tracer gas at concentrations of 2 parts per 1,000,000,000 and thus increasing the range from the gas source at which the device may be reliably used. Use for detection of leaks of volatile UV ionizable compounds and for monitoring processes where vapors are emitted is also provided.
Abstract:
An ion detection device has a strip of carbon-based nanomaterial (CNM) film and a chamber enclosing the CNM film. A low bias voltage is applied at the ends of the CNM film strip, and ions present in the chamber are detected by a change in the magnitude of current flowing through the CNM film under the bias. Also provided are methods for fabricating the device, methods for measuring pressure of a gas, and methods for monitoring or quantifying an ionizing radiation using the device.
Abstract:
An ionization gauge to measure pressure, while controlling the location of deposits resulting from sputtering when operating at high pressure, includes at least one electron source that emits electrons, and an anode that defines an ionization volume. The ionization gauge also includes a collector electrode that collects ions formed by collisions between the electrons and gas molecules and atoms in the ionization volume, to provide a gas pressure output. The electron source can be positioned at an end of the ionization volume, such that the exposure of the electron source to atom flux sputtered off the collector electrode and envelope surface is minimized. Alternatively, the ionization gauge can include a first shade outside of the ionization volume, the first shade being located between the electron source and the collector electrode, and, optionally, a second shade between the envelope and the electron source, such that atoms sputtered off the envelope are inhibited from depositing on the electron source.
Abstract:
Aspects of the present disclosure include a computer-implemented method for identifying an operating temperature of an integrated circuit (IC), the method including using a computing device for: applying a test voltage to a test circuit embedded within the IC, the test circuit including a phase shift memory (PSM) element therein, wherein the PSM element crystallizes at a crystallization temperature from an amorphous phase having a first electrical resistance into a crystalline phase having a second electrical resistance, the second electrical resistance being less than the first electrical resistance; and identifying the IC as having operated above the crystallization temperature in response to a resistance of the test circuit at the test voltage being outside of the target operating range.