Method, device and system for reducing off-axial aberration in electron microscopy

    公开(公告)号:US12176179B2

    公开(公告)日:2024-12-24

    申请号:US18474982

    申请日:2023-09-26

    Applicant: FEI Company

    Abstract: A method for reducing throughput time in a sample image acquisition session in transmission electron microscopy comprises: providing an electron microscope comprising a sample component, a beam generator, an adjusting component, and a filtering component; securing a sample by using the sample component; generating an electron beam by using the beam generator; generating an image beam by directing the beam to the sample component; adjusting at least one of the beam and the image beam by using the adjusting component to obtain at least one modified image beam, wherein the adjusting is performed in such a way, that off-axial aberration of the modified image beam is minimized; and filtering the modified image beam via the filtering component to reduce resolution-deteriorating effect of chromatic aberration on the modified image beam resulting from the adjusting of the at least one of the beam and the image beam.

    Method implemented by a data processing apparatus, and charged particle beam device for inspecting a specimen using such a method

    公开(公告)号:US12175648B2

    公开(公告)日:2024-12-24

    申请号:US18524603

    申请日:2023-11-30

    Applicant: FEI Company

    Abstract: The invention relates to a method implemented by a data processing apparatus, comprising the steps of receiving an image; providing a set-point for a desired image quality parameter of said image; and processing said image using an image analysis technique for determining a current image quality parameter of said image. In the method, the current image quality parameter is compared with said desired set-point. Based on said comparison, a modified image is generated by using an image modification technique. The generating comprises a step of deteriorating said image in terms of said image quality parameter in case said current image quality parameter exceeds said set-point. The modified image is then output and may be further analysed.

    SCANNING ELECTRON MICROSCOPY-BASED TOMOGRAPHY OF SPECIMENS

    公开(公告)号:US20240404784A1

    公开(公告)日:2024-12-05

    申请号:US18203034

    申请日:2023-05-29

    Abstract: Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wij specifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

    Concurrent laser cleaning and spectroscopic cleanliness monitoring

    公开(公告)号:US12158372B2

    公开(公告)日:2024-12-03

    申请号:US17833670

    申请日:2022-06-06

    Applicant: FEI Company

    Abstract: Methods and apparatus are disclosed for concurrent cleaning and cleanliness monitoring of a sample such as a substrate for electron point projection microscopy. A graphene sample is illuminated by a laser. Raman scattering from contaminants generates secondary light which is analyzed by spectrometer. Based on Raman scattering analysis, sample cleanliness is determined. Cleaning can be dynamically terminated based on achieving a target cleanliness level or based on prediction thereof. Variations and additional applications are disclosed.

    INSPECTION APPARATUS AND METHOD
    26.
    发明申请

    公开(公告)号:US20240369356A1

    公开(公告)日:2024-11-07

    申请号:US18776207

    申请日:2024-07-17

    Abstract: An inspection apparatus for adjusting a working height for a substrate for multiple target heights is disclosed. The inspection apparatus includes a radiation source configured to provide a radiation beam and a beam splitter configured to split the radiation beam into multiple beamlets that each reflect off a substrate. Each beamlet contains light of multiple wavelengths. The inspection apparatus includes multiple light reflecting components, wherein each light reflecting component is associated with one of the beamlets reflecting off the substrate and is configured to support a different target height for the substrate by detecting a height or a levelness of the substrate based on the beamlet reflecting off the substrate.

    ANALYSIS METHOD, COMPUTER-READABLE MEDIUM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

    公开(公告)号:US20240347315A1

    公开(公告)日:2024-10-17

    申请号:US18582608

    申请日:2024-02-20

    Inventor: Yusuke SHIMIZU

    CPC classification number: H01J37/28 H01J37/222 H01J37/265 H01J2237/2814

    Abstract: Provided is an analysis method for generating, by acquiring for a plurality of set ranges a distribution representative value representing a representative value of a first characteristic and a second characteristic of a plurality of measurement groups included in the same set range, and by approximating a relationship between the distribution representative value and a concentration of a first impurity with a first approximate line including a curved line part, a relationship information indicating a relationship between a value of the set range and the distribution representative value, generating a virtual distribution in which samples of the first characteristic and the second characteristic are distributed in a range that is wider than a measurement distribution by simulating, based on the measurement distribution and the relationship information, the first characteristic and the second characteristic of a plurality of virtual semiconductor devices, and calculating a defect rate in the virtual distribution.

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