公开(公告)号：US20150083330A1

公开(公告)日：2015-03-26

申请号：US14036754

申请日：2013-09-25

Applicant: Applied Materials, Inc.

Inventor： Nagendra V. Madiwal ,  Robert Irwin Decottignies ,  Andrew Nguyen ,  Paul B. Reuter ,  Angela R. Sico ,  Michael Kuchar ,  Travis Morey ,  Mitchell Disanto

IPC: C23C16/44 ,  C23C14/56 ,  H01L21/67

CPC classification number: H01L21/6719 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126 ,  Y10T29/49432

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract translation: 电子设备制造系统可以包括提供传送室和处理室之间的界面的室端口组件。 在一些实施例中，室端口组件可以被配置成将净化气体流引导到腔室端口组件的衬底传送区域。 在其它实施例中，处理室和/或转移室可以被配置成将净化气体流引导到基板传送区域中。 吹扫气体流入衬底传送区域的流动可以防止和/或减少颗粒物质从腔室硬件到在转移室和处理室之间转移的衬底上的迁移。 还提供了组装腔室端口组件的方法，以及其他方面。

公开(公告)号：US20140020835A1

公开(公告)日：2014-01-23

申请号：US13666224

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, JR. ,  Ankur Agrawal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: C23F1/08 ,  C23C14/28

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract translation: 等离子体反应器具有具有对称RF进料的顶置多线圈感应等离子体源和具有穿过排气区域的多个支柱的对称室排气，从而提供对受限制的工作场所支撑件的通路。 可以包括用于屏蔽来自处理区域的支柱的空间效应的网格。

公开(公告)号：US12100576B2

公开(公告)日：2024-09-24

申请号：US16863541

申请日：2020-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Xue Yang Chang ,  Yu Lei ,  Xianmin Tang ,  John C. Forster ,  Yogananda Sarode Vishwanath ,  Abilash Sainath ,  Tza-Jing Gung

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32477 ,  C23C16/4412 ,  H01J37/3244 ,  H01J37/32495 ,  H01J37/32633 ,  H01J37/32651

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.

公开(公告)号：US12049961B2

公开(公告)日：2024-07-30

申请号：US17656030

申请日：2022-03-23

Applicant: Applied Materials, Inc.

Inventor： Bradley J. Howard ,  Nicolas J. Bright ,  Andrew Nguyen

IPC: F16J10/02 ,  H01J37/32

CPC classification number: F16J10/02 ,  H01J37/32834 ,  H01J37/32899

Abstract: An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.

公开(公告)号：US20220336223A1

公开(公告)日：2022-10-20

申请号：US17846155

申请日：2022-06-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US11315760B2

公开(公告)日：2022-04-26

申请号：US16791947

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, Jr. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US11211282B2

公开(公告)日：2021-12-28

申请号：US16010239

申请日：2018-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Xue Chang ,  Andrew Nguyen

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  C23C14/50

Abstract: Embodiments of process kit components for use in a substrate support, and substrate supports incorporating same, are provided herein. In some embodiments, the substrate support may include a body, a grounding shell formed of an electrically conductive material disposed about the body, a liner formed of an electrically conductive material disposed about the grounding shell, where the liner includes an upper lip that extends inwardly towards the body, a metal fastener disposed through the upper lip to couple the liner to the grounding shell, and a first insulator ring disposed atop the upper lip of the liner and covering the metal fastener.

公开(公告)号：US10796935B2

公开(公告)日：2020-10-06

申请号：US15462203

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Adam J. Wyatt ,  Edward Ng ,  Andrew Nguyen

IPC: H01L21/67

Abstract: An electronic device manufacturing system may include a loadlock. The loadlock may include a plurality of gas line heaters for providing a heated gas to the loadlock to heat a processed substrate therein. Heating a processed substrate may reduce corrosion in the loadlock and subsequent contamination of substrates therein. The loadlock may also include a plurality of embedded heaters in the loadlock housing to reduce moisture therein, further reducing corrosion and contamination. Methods of heating a substrate in a loadlock are also provided, as are other aspects.

公开(公告)号：US10566205B2

公开(公告)日：2020-02-18

申请号：US13746831

申请日：2013-01-22

Applicant: Applied Materials, Inc.

Inventor： Martin Jeffrey Salinas ,  Paul B. Reuter ,  Andrew Nguyen ,  Jared Ahmad Lee

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/02

Abstract: Embodiments of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate. One embodiment of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. A first chamber volume may be used to process a substrate disposed therein using reactive species. A second chamber volume may include a cooled substrate support.

公开(公告)号：US10386126B2

公开(公告)日：2019-08-20

申请号：US15050419

申请日：2016-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kallol Bera ,  Xiaoping Zhou ,  Douglas A. Buchberger, Jr. ,  Andrew Nguyen ,  Hamid Tavassoli ,  Surajit Kumar ,  Shahid Rauf

IPC: F28F3/12 ,  F28F13/00

Abstract: Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.