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    Light emitting diode with Bragg reflector
    32.
    发明授权
    Light emitting diode with Bragg reflector 有权

    公开(公告)号：US10038121B2

    公开(公告)日：2018-07-31

    申请号：US15045279

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

    IPC: H01L33/46 ,  H01L33/38

    Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

    LIGHT EMITTING DIODE
    37.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160240758A1

    公开(公告)日：2016-08-18

    申请号：US15045266

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/62

    CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

    Abstract translation: 提供了一种安装在载体基板上并包括半导体外延结构和至少一个电极焊盘结构的发光二极管（LED）。 半导体外延结构电连接到载体衬底。 电极焊盘结构包括共晶层，阻挡层和延伸层。 共晶层适于与载体基底共晶结合。 阻挡层在共晶层和半导体外延结构之间。 阻挡层阻止共晶粘合过程中共晶层的材料的扩散。 扩展层在共晶层和半导体外延结构之间。 延伸层在共晶接合工艺期间降低由基板的热膨胀和收缩产生的LED上的应力，以防止电极焊盘结构破裂，并且保持LED的质量。

    Light emitting component
    39.
    发明授权
    Light emitting component 有权
    发光元件

    公开(公告)号：US09356205B2

    公开(公告)日：2016-05-31

    申请号：US14462581

    申请日：2014-08-19

    Applicant: Genesis Photonics Inc.

    Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/50 ,  H01L33/60

    CPC classification number: H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

    Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

    Abstract translation: 发光部件包括发光单元，模塑料和波长转换层。 发光单元具有正向发光面。 模塑料覆盖发光单元。 波长转换层设置在模塑料上方。 波长转换层具有与第一表面相对的第一表面和第二表面，其中第一表面位于正向发光表面和第二表面之间，并且第一表面和第二表面中的至少一个是非平面的。

    LIGHT EMITTING UNIT AND LIGHT EMITTING MODULE
    40.
    发明申请
    LIGHT EMITTING UNIT AND LIGHT EMITTING MODULE 审中-公开
    发光单元和发光模块

    公开(公告)号：US20160013384A1

    公开(公告)日：2016-01-14

    申请号：US14474277

    申请日：2014-09-01

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

    IPC: H01L33/62 ,  H01L33/54 ,  H01L33/50 ,  H01L25/075

    CPC classification number: H01L25/0753 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/24137

    Abstract: A light emitting unit includes multiple light emitting dice, a molding compound, a substrate and a patterned metal layer. Each of the light emitting dice includes a light emitting component, a first electrode and a second electrode. The molding compound encapsulates the light emitting dice and exposes a first surface of the first electrode and a second surface of the second electrode of each of the light emitting dice. The molding compound is located between the substrate and the light emitting dice. The patterned metal layer is disposed on the first surface of the first electrode and the second surface of the second electrode of each of the light emitting dice. The light emitting dice are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection by the patterned metal layer.

    Abstract translation: 发光单元包括多个发光骰子，模制化合物，基底和图案化的金属层。 每个发光管芯包括发光部件，第一电极和第二电极。 模制化合物封装发光管芯并暴露第一电极的第一表面和每个发光管芯的第二电极的第二表面。 模塑料位于基板和发光管之间。 图案化的金属层设置在第一电极的第一表面和每个发光管的第二电极的第二表面上。 发光管芯通过图案化的金属层串联连接，并联连接或串联并联连接。

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