Abstract:
A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).
Abstract:
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.
Abstract:
An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
Provided is a phase plate for use in an electron microscope which lessens the problem of image information loss caused by interruption of an electron beam and ameliorates the problem of anisotropic potential distributions. This phase plate comprises openings (23) connected into a single opening, and multiple electrodes (11) arranged in the opening from the outer portion of the opening towards the center of the opening. The cross sections of the electrodes (11) are configured such that a voltage application layer (24) comprising a conductor or a semiconductor is covered by a shield layer comprising a conductor or a semiconductor with an intermediate insulating layer. By this means, this phase plate is capable of lessening electron beam interruption due to the electrodes (11), and of ameliorating the problem of anisotropic potential distributions.
Abstract:
A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.
Abstract:
A preferred aim of the present invention is to provide a charged particle beam device having a high differential exhaust performance while maintaining a large dynamic range of an irradiation current by effectively arranging an aperture for differential pumping (111) and an objective final aperture (110). The present invention has features that a lens barrel including therein an optical system of the charged particle beam device (100) includes a first space (106) having a first degree of vacuum and a second space (105) having a degree of vacuum higher than the first degree of vacuum, and that the objective final aperture (110) is arranged in the second space (105).
Abstract:
A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.
Abstract:
An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result.
Abstract:
The invention relates to a charged particle system provided with a support and positioning structure for supporting and positioning a target on a table, the support and positioning structure comprising a first member and a second member and at least one motor so as to move the first member relative to the second member, wherein a shield is present to shield at least one charged particle beam from electromagnetic fields generated by said at least one motor, the support and positioning structure further comprising a spring mechanically coupling the first member and the second member for at least partially bearing the weight of the first member, table and target.