公开(公告)号：US11488821B2

公开(公告)日：2022-11-01

申请号：US17256414

申请日：2019-06-21

Applicant: FLOSFIA INC.

Inventor： Isao Takahashi ,  Takashi Shinohe

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/16 ,  H01L29/24

Abstract: The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.

公开(公告)号：US20220310798A1

公开(公告)日：2022-09-29

申请号：US17840120

申请日：2022-06-14

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/872

Abstract: An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US11450774B2

公开(公告)日：2022-09-20

申请号：US16628341

申请日：2018-07-06

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Hitoshi Kambara ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

公开(公告)号：US20220285557A1

公开(公告)日：2022-09-08

申请号：US17826516

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/786

Abstract: A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm2/V·s or higher.

公开(公告)号：US20220158000A1

公开(公告)日：2022-05-19

申请号：US17575857

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Takashi SHINOHE

IPC: H01L29/872 ,  H01L29/24 ,  H01L29/04 ,  H01L29/47 ,  H01L29/417

Abstract: Provided is a semiconductor device in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented, the semiconductor device that is particularly useful for power devices. A semiconductor device including at least: a semiconductor layer; a Schottky electrode; and an insulator layer provided between a part of the semiconductor layer and the Schottky electrode, wherein the semiconductor layer contains a crystalline oxide semiconductor, and wherein the insulator layer has a taper angle of 10° or less.

公开(公告)号：US20220140084A1

公开(公告)日：2022-05-05

申请号：US17573844

申请日：2022-01-12

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO

IPC: H01L29/12 ,  C23C16/40 ,  H01L29/778 ,  H01L29/812 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H01L29/739

Abstract: A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide film on the base, the oxide film including, as a major component, a metal oxide containing at least aluminum and gallium, the oxide film having a corundum structure, wherein a principal surface of the oxide film is an m-plane.

公开(公告)号：US11233129B2

公开(公告)日：2022-01-25

申请号：US16764613

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/78

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus including at least an n type semiconductor layer and a p+ type semiconductor layer, wherein the n type semiconductor layer includes a crystalline oxide semiconductor (gallium oxide, for example) containing a metal of Group 13 of the periodic table as a main component, and the p+ type semiconductor layer includes a crystalline oxide semiconductor (iridium oxide, for example) containing a metal of Group 9 of the periodic table as a main component.

公开(公告)号：US20210242363A1

公开(公告)日：2021-08-05

申请号：US17163826

申请日：2021-02-01

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Manabu KIGUCHI ,  Koji AMAZUTSUMI

IPC: H01L31/173 ,  H01L31/032 ,  H01L31/113

Abstract: A semiconductor element and/or semiconductor device having enhanced semiconductor characteristics useful as power devices are provided. A semiconductor element, including: a first electrode; a second electrode; an n−-type semiconductor layer; and a low electrically conductive layer, the low electrically conductive layer that is arranged between the first electrode and the n−-type semiconductor layer, a first barrier height of the first electrode is larger than a second barrier height of the second electrode, a first electrical resistivity of the low electrically conductive layer is equal to or more than 1000 times as large as a second electrical resistivity of the n−-type semiconductor layer, and the semiconductor element that is configured to be able to irradiate light from an outside to at least a part of the low electrically conductive layer.

公开(公告)号：US10930743B2

公开(公告)日：2021-02-23

申请号：US16020240

申请日：2018-06-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/778 ,  H01L29/737 ,  H01L21/02 ,  H01L29/08 ,  H01L27/12 ,  C23C16/40 ,  H01L29/66 ,  C23C16/448 ,  H01L29/786 ,  C23C16/44

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an ε-phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an ε-phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.

公开(公告)号：US20200211919A1

公开(公告)日：2020-07-02

申请号：US16724516

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao TAKAHASHI ,  Tatsuya TORIYAMA ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Hideyuki UEHIGASH ,  Junji OHARA ,  Fusao HIROSE ,  Hideo MATSUKI

IPC: H01L23/373

Abstract: A crystalline oxide film with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide film including a first crystal axis, a second crystal axis; a metal oxide as a major component that includes gallium, a first side; and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.