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    LIGHT EMITTING DEVICE STRUCTURE
    41.
    发明申请
    LIGHT EMITTING DEVICE STRUCTURE 审中-公开

    公开(公告)号：US20180190887A1

    公开(公告)日：2018-07-05

    申请号：US15908779

    申请日：2018-02-28

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/60 ,  H01L33/58 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54

    CPC classification number: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

    Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.

    LIGHT EMITTING DIODE STRUCTURE
    45.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE 审中-公开

    公开(公告)号：US20160190390A1

    公开(公告)日：2016-06-30

    申请号：US15064578

    申请日：2016-03-08

    Applicant: Genesis Photonics Inc.

    Inventor： Yun-Li Li ,  Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

    IPC: H01L33/22

    CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/58

    Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

    LIGHT EMITTING DIODE DEVICE
    46.
    发明申请
    LIGHT EMITTING DIODE DEVICE 审中-公开
    发光二极管装置

    公开(公告)号：US20160049555A1

    公开(公告)日：2016-02-18

    申请号：US14918580

    申请日：2015-10-21

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

    CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

    Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

    Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

    Light emitting element structure
    47.
    发明授权
    Light emitting element structure 有权
    发光元件结构

    公开(公告)号：US09236542B1

    公开(公告)日：2016-01-12

    申请号：US14582207

    申请日：2014-12-24

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/00 ,  H01L33/58 ,  H01L33/50

    CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L33/50 ,  H01L33/56

    Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of λ/4n, λ is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.

    Abstract translation: 发光元件结构包括配置为发光的发光单元; 被配置为覆盖所述发光单元的封装单元; 布置在所述封装单元上的透明导光结构; 以及布置在所述透明导光结构上的第一防反射膜，其中所述第一抗反射膜的厚度为λ/ 4n的奇数倍，λ是从所述发光单元经过所述封装单元的光的波长 ，n为第一防反射膜的折射率。

    LIGHT EMITTING CHIP
    48.
    发明申请
    LIGHT EMITTING CHIP 有权
    发光芯片

    公开(公告)号：US20150188014A1

    公开(公告)日：2015-07-02

    申请号：US14535333

    申请日：2014-11-07

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/62 ,  H01L33/48 ,  H01L33/42 ,  H01L33/44

    CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

    Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

    Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

    LIGHT EMITTING DIODE PACKAGE STRUCTURE
    49.
    发明申请
    LIGHT EMITTING DIODE PACKAGE STRUCTURE 审中-公开
    发光二极管封装结构

    公开(公告)号：US20150102378A1

    公开(公告)日：2015-04-16

    申请号：US14513218

    申请日：2014-10-14

    Applicant: Genesis Photonics Inc.

    Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Kuan-Yung Liao ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

    IPC: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L33/50

    CPC classification number: H01L33/58 ,  H01L33/50 ,  H01L33/52 ,  H01L33/60

    Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

    Abstract translation: 发光二极管封装结构包括封装载体，导光部件和发光单元。 导光部件设置在封装载体上。 发光单元设置在相对远离封装载体的导光部件的上表面上。 导光部件的水平投影面积大于发光部件的水平投影面积。 发光单元适于发射光束，并且光束的一部分进入导光部件并从导光部件的上表面发射。 存在于光束与上表面的法线方向之间的夹角为0度〜75度。

    Red light emitting diode and manufacturing method thereof
    50.
    发明授权
    Red light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US11508877B2

    公开(公告)日：2022-11-22

    申请号：US16826298

    申请日：2020-03-23

    Applicant: Genesis Photonics Inc.

    Inventor： Tung-Lin Chuang ,  Yi-Ru Huang ,  Yu-Chen Kuo ,  Chih-Ming Shen ,  Tsung-Syun Huang ,  Jing-En Huang

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

    Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.

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