公开(公告)号：US20160240349A1

公开(公告)日：2016-08-18

申请号：US15136503

申请日：2016-04-22

Applicant: Glenn Lane Family Limited Liability Limited Partnership

Inventor： Glenn E. LANE

IPC: H01J37/30 ,  H01J49/06 ,  H01J37/317 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

公开(公告)号：US09257260B2

公开(公告)日：2016-02-09

申请号：US14260053

申请日：2014-04-23

Applicant: KLA-Tencor Corporation

Inventor： Gary Fan ,  David Chen ,  Vivekanand Kini ,  Hong Xiao

IPC: H01J37/28 ,  H01J37/21 ,  G01N23/225 ,  H01J37/147

CPC classification number: H01J37/28 ,  G01N23/2251 ,  H01J37/04 ,  H01J37/147 ,  H01J37/261 ,  H01J2237/04 ,  H01J2237/24592 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源，样本台，一组电子元件，检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查，并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

公开(公告)号：US08999627B1

公开(公告)日：2015-04-07

申请号：US14198145

申请日：2014-03-05

Applicant: Multibeam Corporation

Inventor： David K. Lam ,  Kevin M. Monahan ,  Theodore A. Prescop ,  Cong Tran

IPC: G03F7/20 ,  H01J37/30 ,  G06F17/50

CPC classification number: H01J37/3177 ,  G03F7/2051 ,  G03F7/2059 ,  G06F17/5081 ,  H01J37/30 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/04 ,  H01J2237/049 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30416 ,  H01J2237/30472 ,  H01J2237/31761 ,  H01J2237/31774 ,  H01J2237/31798 ,  H01L22/12 ,  H01L22/20

Abstract: The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have discovered that it is highly advantageous to use write and inspection tools that share the same or substantially the same stage and the same or substantially the same designs for respective arrays of multiple charged particle beam columns, and that access the same design layout database to target and pattern or inspect features. By using design-matched charged particle beam tools, correlation of defectivity is preserved between inspection imaging and the design layout database. As a result, image-based defect identification and maskless design correction, of random and systematic errors, can be performed directly in the design layout database, enabling a fast yield ramp.

Abstract translation: 本申请公开了使用带电粒子束工具来图案化和检查衬底的方法，系统和装置。 本发明人已经发现，对于多个带电粒子束列的相应阵列使用共享相同或基本上相同的阶段以及相同或基本上相同的设计是非常有利的，并且访问相同的设计布局数据库 目标和模式或检查功能。 通过使用设计匹配的带电粒子束工具，在检查成像和设计布局数据库之间保留了缺陷度的相关性。 因此，可以在设计布局数据库中直接执行基于图像的缺陷识别和无掩码设计校正（随机和系统错误），从而实现快速生产斜率。

公开(公告)号：US20140319342A1

公开(公告)日：2014-10-30

申请号：US14260053

申请日：2014-04-23

Applicant: KLA-Tencor Corporation

Inventor： Gary Fan ,  David Chen ,  Vivekanand Kini ,  Hong Xiao

IPC: H01J37/28 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/2251 ,  H01J37/04 ,  H01J37/147 ,  H01J37/261 ,  H01J2237/04 ,  H01J2237/24592 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源，样本台，一组电子元件，检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查，并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

公开(公告)号：US08373144B1

公开(公告)日：2013-02-12

申请号：US12873158

申请日：2010-08-31

Applicant: Mark A. McCord ,  Paul F. Petric ,  Allen Carroll

Inventor： Mark A. McCord ,  Paul F. Petric ,  Allen Carroll

IPC: G21K1/02

CPC classification number: G21K1/087 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/04

Abstract: One embodiment relates to an electron-beam apparatus for writing a pattern on a target substrate. The apparatus includes a plurality of arrays of actively-controlled pixel elements at a surface of a reflective electron patterning device. The plurality of arrays of actively-controlled pixel elements are arranged so that there is an area without any actively-controlled pixel elements in a region surrounding an optical axis of the objective lens. The plurality of arrays may be arranged to each lie on a circle centered on the optical axis. Other features, aspects and embodiments are also disclosed.

Abstract translation: 一个实施例涉及用于在目标基板上写入图案的电子束装置。 该装置包括在反射电子图案形成装置的表面上的多个主动控制的像素元件阵列。 多个主动控制的像素元件的阵列被布置成使得在围绕物镜的光轴的区域中没有任何主动控制的像素元件的区域。 多个阵列可以被布置成各自位于以光轴为中心的圆上。 还公开了其它特征，方面和实施例。

公开(公告)号：US08183546B2

公开(公告)日：2012-05-22

申请号：US12712816

申请日：2010-02-25

Applicant: Deepak A. Ramappa

Inventor： Deepak A. Ramappa

IPC: G21K5/04

CPC classification number: H01J37/3171 ,  H01J37/3002 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/04 ,  H01J2237/2482 ,  H01J2237/3171

Abstract: Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.

Abstract translation: 产生的离子产生并指向工件。 激光源产生在工件上方一条线上投射的激光。 当激光产生时，一部分离子被激光器阻挡。 这可以使得能够选择性地植入或修改工件。 在一个具体实施例中，激光器被产生，而离子被指向工件然后停止。 在激光停止后，离子仍然朝向工件。

公开(公告)号：US20110204264A1

公开(公告)日：2011-08-25

申请号：US12712816

申请日：2010-02-25

Applicant: Deepak A. RAMAPPA

Inventor： Deepak A. RAMAPPA

IPC: H01J37/30 ,  H01J37/02

CPC classification number: H01J37/3171 ,  H01J37/3002 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/04 ,  H01J2237/2482 ,  H01J2237/3171

Abstract: Ions are generated and directed toward a workpiece. A laser source generates a laser that is projected above the workpiece in a line. As the laser is generated, a fraction of the ions are blocked by the laser. This may enable selective implantation or modification of the workpiece. In one particular embodiment, the lasers are generated while ions are directed toward the workpiece and then stopped. Ions are still directed toward the workpiece after the lasers are stopped.

Abstract translation: 产生的离子产生并指向工件。 激光源产生在工件上方一条线上投射的激光。 当激光产生时，一部分离子被激光器阻挡。 这可以实现工件的选择性植入或修改。 在一个具体实施例中，激光器被产生，而离子被指向工件然后停止。 在激光停止后，离子仍然朝向工件。

公开(公告)号：US5872358A

公开(公告)日：1999-02-16

申请号：US733857

申请日：1996-10-18

Applicant: Hideo Todokoro ,  Makoto Ezumi

Inventor： Hideo Todokoro ,  Makoto Ezumi

IPC: H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J37/285

CPC classification number: H01J37/244 ,  H01J37/145 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/04756 ,  H01J2237/2449

Abstract: A scanning microscope is provided for producing a scan image at high spatial resolution and in a low acceleration voltage area. An acceleration tube is located in an electron beam path of an objective lens for applying a post-acceleration voltage of the primary electron beam. The application of an overlapping voltage onto a sample allows a retarding electric field against the primary electron beam to be formed between the acceleration tube and the sample. The secondary electrons generated from the sample and the secondary signals such as reflected electrons are extracted into the acceleration tube through the effect of an electric field (retarding electric field) immediately before the sample. The signals are detected by secondary signal detectors located upwardly than the acceleration tube.

公开(公告)号：US5534752A

公开(公告)日：1996-07-09

申请号：US507534

申请日：1995-07-26

Applicant: Chung Hua-Chu

Inventor： Chung Hua-Chu

IPC: H01J37/30 ,  H01J37/08

CPC classification number: H01J37/3002 ,  H01J2237/04 ,  H01J2237/31701

Abstract: An improved shutter activating mechanism for an ion implantation apparatus, used to implant ions into semiconductor wafers, is described. The apparatus has an ion source, an ion accelerator, an ion beam shutter, and an ion beam shaping plate system. The improvement consists of a improved shutter activating mechanism with a rotatable shaft fixed to the ion beam shutter, a cross bar fed to the rotatable shaft, a abutment surface for limiting rotational movement of the cross bar, and a driving solenoid provided with a push rod. A bifurcated element is fixed to the end of the push rod which has aligned transverse apertures, a link joining the bifurcated element and the push rod, the link having an aperture on one end, a bearing assembly to allow limited axial movement, an a first pin through the transverse aperture and the bearing assembly. The link has a bifurcated end with transverse aperture. A second pin provides a connection between the bifurcated end of the link and the cross bar.

Abstract translation: 描述了用于将离子注入到半导体晶片中的用于离子注入装置的改进的快门启动机构。 该装置具有离子源，离子加速器，离子束快门和离子束成形板系统。 该改进包括改进的快门启动机构，其中可旋转的轴固定到离子束快门，供给到可旋转轴的横杆，用于限制横杆的旋转运动的邻接表面，以及设置有推杆 。 分叉元件被固定到推杆的具有对准的横向孔的端部，连接分叉元件和推杆的连杆，连杆在一端具有孔，轴承组件允许有限的轴向移动，第一 穿过横向孔和轴承组件。 该连杆具有横向孔的分叉端。 第二个引脚提供链路的分叉端和横杆之间的连接。

公开(公告)号：US20230298853A1

公开(公告)日：2023-09-21

申请号：US18321442

申请日：2023-05-22

Applicant: FEI Company

Inventor： Bart BUIJSSE ,  Bart Jozef JANSSEN

IPC: H01J37/26 ,  H01J37/295

CPC classification number: H01J37/265 ,  H01J37/295 ,  H01J2237/04

Abstract: Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.