Abstract:
A structure includes multiple electromagnets with sub-100 micrometer feature size. Each electromagnet includes a substrate defining multiple filled trenches with conductive fillers, a first isolation layer disposed over the conductive fillers such that a portion of each conductive filler is exposed by the first isolation layer, a core disposed over the first isolation layer, and a second isolation layer covering the core. The second isolation layer has a top surface, and winding interconnects extend from a plane defined by the top surface of the second isolation layer to the conductive fillers such that each winding interconnect contacts one of the conductive fillers on a portion exposed by the first isolation layer. A conductive layer includes upper connectors to electrically connect winding interconnects positioned on opposite sides of the core. The trenches, winding interconnects, and upper connectors are electrically connected to form windings around the core.
Abstract:
There is provided an electromagnetic lens which includes an electromagnetic coil wound to be rotationally symmetrical about an optical axis of an electron beam, and a pole piece covering the electromagnetic coil, in which: a gap is integrally formed in either one of an inner wall formed at an inner circumference side of the pole piece and a lower end wall formed in an end portion at an emission side of the electron beam, or a boundary portion between the two walls; the inner wall is formed to be thinnest at a portion close to the gap and to gradually become thicker as a distance from the gap increases; and the electromagnetic lens is formed such that a width in a radial direction thereof is more increased as being closer to the gap along with the change of the thickness of the inner wall.
Abstract:
A lens system for a plurality of charged particle beams comprises a lens body with a first pole piece, a second pole piece and a plurality of lens openings for the respective charged particle beams; a common excitation coil arranged around the plurality of lens openings for providing a respective first magnetic flux to the lens openings; and a compensation coil arranged between the lens openings for providing a respective second magnetic flux to at least some of the lens openings so as to compensate for an asymmetry of the first magnetic flux.
Abstract:
The present invention was made in view of a problem of an electron microscope in which a reduction in detection efficiency of electrons detected by a detector should be prevented by eliminating any influence of a leakage magnetic field through a gap in an objective lens onto the electrons emitted from a specimen. To solve the problem, the present invention provides an electron microscope having a configuration with: a pole piece electrode for accelerating primary electrons emitted at an electrons source; and an objective lens including the pole piece electrode. In the objective lens, an electrically and magnetically insulated gap is formed between the pole piece electrode and other pole piece, and an auxiliary coil is concentrically disposed with the objective lens at a middle position between the gap and a detection surface of the electron detector, with an electric current flowing through the auxiliary coil in the opposite direction from that of an electric current flowing through the objective lens coil.
Abstract:
An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.
Abstract:
A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprises a beam influencing coil (13) operable to influence an electron beam (EB) in the vicinity of the device by way of a magnetic field and a heat dissipation compensating coil (14) operable to provide a heat output so compensating for any change in heat dissipation of the device due to operation of the beam influencing coil (13)—particularly variable operation to vary the field intensity or to create and remove a field—as to reduce the amount of change, preferably to maintain the net heat dissipation at a constant value. The compensating coil (13) can be controlled, for example, by measurement (19) of the heat dissipation of the device and calculating (18) current supply (16) to the coil (13) in dependence on the measured dissipation.
Abstract:
A device for influencing an electron beam, for example a beam deflecting device in an electron beam lithography machine, comprises a beam influencing coil (13) operable to influence an electron beam (EB) in the vicinity of the device by way of a magnetic field and a heat dissipation compensating coil (14) operable to provide a heat output so compensating for any change in heat dissipation of the device due to operation of the beam influencing coil (13)—particularly variable operation to vary the field intensity or to create and remove a field—as to reduce the amount of change, preferably to maintain the net heat dissipation at a constant value. The compensating coil (13) can be controlled, for example, by measurement (19) of the heat dissipation of the device and calculating (18) current supply (16) to the coil (13) in dependence on the measured dissipation.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Abstract:
A lens for a charged particle beam apparatus, the lens having lens components, is described. The lens includes a first magnetic lens having an upper pole piece and a middle pole piece; a second magnetic lens having the middle pole piece and a lower pole piece; a first coil arranged in the first magnetic lens and to provide a first magnetic field between the upper pole piece and the middle pole piece; a second coil arranged in the second magnetic lens and to provide a second magnetic field between the middle pole piece and the lower pole piece; and an electrostatic lens having an upper electrode and a lower electrode, wherein at least one of a first inner diameter defined by the upper pole piece and a second inner diameter defined by the middle pole piece is larger than a third inner diameter of the lower pole piece.