Abstract:
We disclose a gripper and associated apparatus and methods for delivering nano-manipulator probe tips inside a vacuum chamber. The gripper includes a tube; a compression cylinder inside of and coaxial with the tube; and at least one elastic ring adjacent to the compression cylinder. There is a vacuum seal coaxial with the compression cylinder for receiving and sealing against a probe tip. An actuator is connected to the compression cylinder for compressing the elastic ring and causing it to grip the probe tip. Thus the probe tip can be gripped, transferred to a different location in the vacuum chamber, and released there.Samples attached to the probe tips will be transferred to a TEM sample holder, shown in several embodiments, that includes a bar having opposed ends; an arm attached to each opposed end of the bar; one or more slots for receiving a probe tip; and, each slot having an inner part and an outer part, where the inner part is smaller than the outer part. The TEM sample holders just described are inserted into a carrier cassette. A cassette for transferring one or more TEM sample holders comprises a platform; at least one bar extending upwardly from the platform; the bar having a groove for receiving and holding a TEM sample holder. A rotatable magazine holds one or more probe tips and selectively releases the tips. The magazine includes a cartridge having a plurality of longitudinal openings for receiving probe tips and dispensing probe tips.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput. A metrology system of fine pattern according to the pattern inspection technique has: a the column that includes a charged particle source, an electron optics for scanning a desired observation area on a sample with a charged particle beam emitted from the charged particle source, and a detector for detecting charged particles generated secondarily from the sample scanned by the charged particle beam; information processing means for measuring information about geometry of a pattern formed on the sample based on information on the intensity of the charged particles obtained by the detector; and a sample introduction unit for introducing the sample into the inside of the column; wherein a charge neutralizer unit for generating ions and charge neutralizing the sample with the ions and surface potential measuring means for measuring a surface potential of the sample surface are provided on a path that is inside the sample introduction unit and transports the sample to the column.
Abstract:
An ion implanting apparatus and method are provided. The apparatus includes a plurality of dummy wafers and a plurality of dummy wafer cassettes. The dummy wafers are separately used for respective kinds of ions, and the plurality of dummy wafer cassettes separately store the dummy wafers separately used for the respective kinds of ions. The plurality of dummy wafer cassettes are installed in order to store the plurality of dummy wafers for the respective kinds of ions and use the dummy wafers for an ion implanting process.
Abstract:
The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate. The substrate inspection apparatus comprises: an electron beam apparatus including a charged particle beam source for emitting a charged particle beam, a primary optical system for irradiating the charged particle beam onto the substrate, a secondary optical system into which a secondary charged particle beam is introduced, the secondary charged particle beam being emitted from the substrate by an irradiation of the charged particle beam, a detection system for detecting the secondary charged particle beam introduced into said secondary optical system and outputting as an electric signal, and a process control system for processing and evaluating the electric signal; a stage unit for holding the substrate and moving the substrate relatively to said electron beam apparatus; a working chamber capable of shielding at least an upper region of the stage unit form outside to control under desired atmosphere; and a substrate load-unload mechanism for transferring the substrate into or out of the stage.
Abstract:
An apparatus for performing automated in-situ lift-out of a sample from a specimen includes a computer having a memory with computer-readable instructions, a stage for a specimen and a nano-manipulator. The stage and the nano-manipulator are controlled by motion controllers connected to the computer. The nano-manipulator has a probe tip for attachment to samples excised from the specimen. The computer-readable instructions include instructions to cause the stage motion controllers and the nano-manipulator motion controllers, as well as an ion-beam source, to automatically perform in-situ lift-out of a sample from the specimen.
Abstract:
There is disclosed a method of efficiently rotating a specimen without hindrance to observation of the specimen. A specimen holder having a holder body and a specimen-holding member is used. The holder body has a hole in which a step surface is formed. The specimen-holding member is supported from the step surface in the hole of the holder body and positioned within the hole. Arc-shaped slots are formed in the step surface. The specimen-holding member has an opening that accommodates the specimen. The specimen-holding member also has a surrounding portion through which rod-like members extend. The rod-like members have lower-end portions inserted in the slots formed in the step surface. The rod-like members also have upper-end portions. The specimen-holding member holding the specimen is rotated by rotating the upper-end portions of the rod-like members.
Abstract:
A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate nullSnull to be inspected into an inspection chamber 23-1 maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
Abstract:
A system is provided for imaging, in an ESE microscope or other variable pressure microscope, a single sample at various time intervals during dissolution of the sample in a liquid. The system includes a sample chamber having a sample well. The sample well includes an first fluid port and a second fluid port for forming a dissolution bath in the sample well. In accordance with the system according to the present invention, the sample chamber is placed into the specimen chamber of the ESE microscope and a sample is deposited into the sample well of the sample chamber. The sample is immersed in a liquid which flows through the sample well via the first and second fluid ports during a dissolution cycle. The liquid is then drained from the sample well via one of the first and second fluid ports during a draining cycle, and then, during an imaging cycle, the sample is imaged by the ESE microscope. The dissolution cycle, the draining cycle, and the imaging cycle all occur while the sample well is inside the specimen chamber of the ESE microscope.
Abstract:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.