公开(公告)号：US09093201B2

公开(公告)日：2015-07-28

申请号：US14155771

申请日：2014-01-15

Applicant: IMS NANOFABRICATION AG

Inventor： Elmar Platzgummer ,  Andreas Chylik ,  Gerald Kratzert ,  Roman Oberleitner

IPC: H01J1/90 ,  H01B17/14 ,  H01J37/147 ,  H01J37/02 ,  H01J37/04 ,  H01J37/15 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01B17/14 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/04 ,  H01J37/147 ,  H01J37/15 ,  H01J37/3177 ,  H01J2237/036 ,  H01J2237/038 ,  H01J2237/1502

Abstract: A high-voltage insulation device (300) for use in a charged-particle optical apparatus comprises a plurality of rigid pillars (320) made of electrically insulating material. These pillars (320) are arranged around a central passage (310) which traverses the insulating device along its longitudinal axis (L), and the two ends of each pillar are configured to be respectively fixed to two separate electrostatic housings (221, 231) of the charged-particle optical apparatus by means of two respective end plates (311, 312), with the pillars (320) being oriented at an angle so as to be inclined with regard to said longitudinal axis (L). Advantageously, the pillars are mechanically adjustable with regard to their effective length, and each pillar (320) is arranged outside the central passage with its two ends at either of the first and second end plates (311, 312), preferably in a zig-zag arrangement.

Abstract translation: 用于带电粒子光学装置的高压绝缘装置（300）包括由电绝缘材料制成的多个刚性支柱（320）。 这些支柱（320）围绕其纵向轴线（L）穿过绝缘装置的中心通道（310）布置，并且每个支柱的两端被分别固定在两个独立的静电外壳（221,231）上， 通过两个相应的端板（311,312）连接带电粒子光学装置，柱子（320）以相对于所述纵向轴线（L）倾斜的角度定向。 有利地，支柱可相对于它们的有效长度机械地调节，并且每个支柱（320）布置在中心通道的外侧，其两端位于第一和第二端板（311,312）中的任一个处， 扎格布置。

公开(公告)号：US20150144800A1

公开(公告)日：2015-05-28

申请号：US14412754

申请日：2013-03-12

Applicant: LIMO Patentverwaltung GmbH & Co. KG

Inventor： Vitalij Lissotschenko

IPC: H01J29/70 ,  H01J29/48 ,  H01J29/04 ,  H01J31/00

CPC classification number: H01J29/70 ,  H01J3/30 ,  H01J29/04 ,  H01J29/48 ,  H01J31/00 ,  H01J37/06 ,  H01J37/147 ,  H01J37/15 ,  H01J37/305 ,  H01J2237/0213 ,  H01J2237/061 ,  H01J2237/06308

Abstract: The invention relates to a device (20) for producing an electron beam (4), which comprises a hot cathode (1), a cathode electrode (2), an anode electrode (3) having an opening (6) through which an electron beam (4) produced by the device can pass, wherein during the operation of the device (20) a voltage for accelerating the electrons exiting from the hot cathode (1) is applied between the cathode electrode (2) and the anode electrode (3), and further comprising deflection means that can deflect the electron beam (4) that has passed through the opening of the anode electrode (3), wherein the deflection means comprise at least one deflection electrode (8, 12), which can reflect the electron beam (4) and/or which comprises a deflection surface (9) that is inclined towards the propagation direction of the electron beam (4).

Abstract translation: 本发明涉及一种用于制造电子束（4）的装置（20），其包括热阴极（1），阴极电极（2），具有开口（6）的阳极电极（3） 由器件产生的光束（4）可以通过，其中在器件（20）的操作期间，在阴极电极（2）和阳极电极（3）之间施加用于加速从热阴极（1）出射的电子的电压 ），并且还包括偏转装置，其可以偏转已经通过阳极电极（3）的开口的电子束（4），其中偏转装置包括至少一个偏转电极（8,12），其可以反映 电子束（4）和/或包括朝向电子束（4）的传播方向倾斜的偏转表面（9）。

公开(公告)号：US09034542B2

公开(公告)日：2015-05-19

申请号：US14257874

申请日：2014-04-21

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Ingo Bork

IPC: G03F1/20 ,  G03F7/20 ,  G03F1/78 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/2063 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  G03F7/2037 ,  G06F17/5009 ,  G06F17/5081 ,  H01J37/147 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.

Abstract translation: 在用于对带电粒子束光刻进行压裂或掩模数据准备或掩模处理校正的方法中，确定将在表面上形成图案的多个镜头，其中确定镜头，以便将所得到的图案的灵敏度降低到 光束模糊（＆bgr; f）。 在一些实施方案中，通过改变图案的一部分的带电粒子表面剂量来减少对于b的变化的敏感性。 还公开了在表面上形成图案和用于制造集成电路的方法，其中减小了对于图像变化f的图案敏感度。

公开(公告)号：US20150053855A1

公开(公告)日：2015-02-26

申请号：US14356166

申请日：2012-11-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Masumi Shirai

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/22 ,  H01J37/222 ,  H01J2237/2806 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: A scanning electron microscope (SEM) is configured so that SEM images are acquired while scanning a pyramid pattern on a sample plane from four directions. Landing angle of the electron beam is calculated from these SEM images, which are then averaged, whereby inclination angle of the electron beam that is less influenced from scan distortion can be found.

Abstract translation: 扫描电子显微镜（SEM）被构造成使得在从四个方向扫描样品平面上的金字塔图案的同时获取SEM图像。 从这些SEM图像计算电子束的着陆角，然后对其进行平均，从而可以发现受扫描失真影响较小的电子束的倾斜角。

公开(公告)号：US20150041650A1

公开(公告)日：2015-02-12

申请号：US14390071

申请日：2013-03-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshimi Kawanami ,  Hironori Moritani

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/26 ,  H01J37/10

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/10 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/0807

Abstract: In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region.

Abstract translation: 在常规气田电离离子源的情况下，由于离子束的电流量小，所以不可能以高S / N比和高速加工工艺进行分析。 鉴于这些问题，本发明的目的是为了获得大的离子束电流，同时抑制发射电极损坏的可能性。 本发明的特征在于，其中离子束至少在两种操作状态下发射的过程，包括第一操作状态，其中当施加第一提取电压时，将气体压力设置为第一气体压力，离子 从发射电极的顶点处的第一离子发射区域发射;以及第二操作状态，其中当施加高于第一提取电压的第二提取电压时，将气体压力设定为第二气体 高于第一气体压力的压力，从大于第一离子发射区域的第二离子发射区域发射离子。

公开(公告)号：US20150014531A1

公开(公告)日：2015-01-15

申请号：US14379704

申请日：2013-02-18

Applicant: HITACHI HIGH-TECHNNOLOGIES COPRORATION

Inventor： Minoru Yamazaki ,  Hideyuki Kazumi ,  Yuko Sasaki ,  Makoto Suzuki

IPC: H01J37/147 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/147 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/063 ,  H01J2237/15 ,  H01J2237/1501 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/2814

Abstract: It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector.

Abstract translation: 本发明的目的是提供一种扫描电子显微镜，用于鉴别从样品喷出的电子的角度，而不设置用于限制轴外的角度的开口。 为了实现上述目的，提出了一种扫描电子显微镜，其包括用于偏转电子束的照射位置的偏转器和用于控制偏转器的控制单元，并且还包括检测器，用于检测由 用电子束照射样品，布置在检测器和偏转器之间并具有用于使电子束通过的开口的开口构成部件和辅助信号偏转器，用于偏转从样品喷出的电子，其中次级信号偏转器是 被控制以根据偏转器的偏转控制将从样品喷出的电子偏转到通过电子束的开口。

公开(公告)号：US20140319342A1

公开(公告)日：2014-10-30

申请号：US14260053

申请日：2014-04-23

Applicant: KLA-Tencor Corporation

Inventor： Gary Fan ,  David Chen ,  Vivekanand Kini ,  Hong Xiao

IPC: H01J37/28 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/2251 ,  H01J37/04 ,  H01J37/147 ,  H01J37/261 ,  H01J2237/04 ,  H01J2237/24592 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Abstract translation: 用于自适应电子束扫描的系统可以包括配置成扫描横跨样品表面的电子束的检查子系统。 检查子系统可以包括电子束源，样本台，一组电子元件，检测器组件和通信地耦合到检查子系统的一个或多个部分的控制器。 控制器可以评估样品区域的一个或多个部分的一个或多个特征以进行检查，并且响应于所评估的一个或多个特性来调整检查子系统的一个或多个扫描参数。

公开(公告)号：US08847148B2

公开(公告)日：2014-09-30

申请号：US13215514

申请日：2011-08-23

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/317 ,  H01J37/05

CPC classification number: G03F1/80 ,  B24B37/04 ,  G03F1/82 ,  H01J37/05 ,  H01J37/147 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/15 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/31105 ,  H01L21/31111 ,  H01L29/36 ,  H05H3/02 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

公开(公告)号：US20140175277A1

公开(公告)日：2014-06-26

申请号：US13734180

申请日：2013-01-04

Applicant: Stefan Lanio

Inventor： Stefan Lanio ,  Jüergen Frosien ,  Gerald Schoenecker ,  Dieter Winkler

IPC: H01J37/26

CPC classification number: H01J37/244 ,  H01J37/147 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/1516 ,  H01J2237/24465 ,  H01J2237/2449 ,  H01J2237/24592 ,  H01J2237/2806 ,  H01J2237/2812 ,  H01J2237/2814

Abstract: A secondary charged particle detection system for a charged particle beam device is described. The detection system includes a beam splitter for separating a primary beam and a secondary beam formed upon impact on a specimen; a beam bender for deflecting the secondary beam; a focusing lens for focusing the secondary beam; a detection element for detecting the secondary beam particles, and three deflection elements, wherein at least a first deflector is provided between the beam bender and the focusing lens, at least a second deflector is provided between the focusing lens and the detection element, at least a third deflector is provided between the beam splitter and the detection element.

Abstract translation: 描述了带电粒子束装置的二次带电粒子检测系统。 检测系统包括用于分离初级束的分束器和在冲击样品上形成的次级束; 用于偏转次光束的光束弯曲机; 用于聚焦二次束的聚焦透镜; 用于检测次级束粒子的检测元件和三个偏转元件，其中至少第一偏转器设置在光束弯曲器和聚焦透镜之间，至少第二偏转器设置在聚焦透镜和检测元件之间，至少 在分束器和检测元件之间提供第三偏转器。

公开(公告)号：US20130206725A1

公开(公告)日：2013-08-15

申请号：US12725367

申请日：2010-03-16

Applicant: Karl Leeser ,  Ishtak Karim ,  Alexandre de Chambrier ,  Liqi Wu ,  Chunming Zhou

Inventor： Karl Leeser ,  Ishtak Karim ,  Alexandre de Chambrier ,  Liqi Wu ,  Chunming Zhou

IPC: C23F1/00 ,  C23F1/08 ,  C23C16/52 ,  C23C16/00

CPC classification number: H01J37/147 ,  C23C14/32 ,  C23C14/35 ,  H01J37/30 ,  H01J37/3266 ,  H01J37/34

Abstract: Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate.

Abstract translation: 公开了使用电离物理气相沉积（iPVD）在衬底（例如，半导体衬底）上沉积材料层的方法和相关设备。 还公开了用于在半导体衬底上等离子体蚀刻（例如，再溅射）材料层的方法和相关装置。