公开(公告)号：US11205643B2

公开(公告)日：2021-12-21

申请号：US16964339

申请日：2019-01-29

Applicant: OSRAM OLED GmbH

Inventor： Martin Behringer

IPC: H01L25/075 ,  G09G3/32 ,  H01L23/538

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the second optoelectronic semiconductor chip of the first optoelectronic component is defective.

公开(公告)号：US11202058B2

公开(公告)日：2021-12-14

申请号：US16120094

申请日：2018-08-31

Applicant: OSRAM OLED GMBH

Inventor： Peter Brick ,  Hubert Halbritter ,  Mikko Peraelae ,  Frank Singer

IPC: H04N13/302 ,  H04N13/351 ,  H04N13/305 ,  G02B30/27 ,  H04N13/327

Abstract: A 3D display element (2) comprising a plurality of emission regions (20) adapted to emit electromagnetic radiation (L), wherein at least some emission regions (20) are associated with a first group and at least some emission regions (20) are associated with a second group (21, 22), wherein by means of the emission regions (20) of the first group (21) respectively a pixel (100) of a first perspective (11) of an image (B) can be represented, and by means of the emission regions (20) of the second group (22) respectively a pixel (100) of a second perspective (12) of the image (B) can be represented the sum of all emission regions (20) is greater than the sum of all pixels (100) of all perspectives (11, 12).

公开(公告)号：US11189990B2

公开(公告)日：2021-11-30

申请号：US16615452

申请日：2018-05-18

Applicant: OSRAM OLED GmbH

Inventor： Andreas Wojcik ,  Hubert Halbritter ,  Thomas Schwarz

IPC: H01S5/0231 ,  H01S5/0234 ,  H01S5/02234 ,  H01S5/0232 ,  H01S5/0236 ,  H01S5/0233 ,  H01L23/00 ,  H01S5/042 ,  H01S5/02345 ,  H01S5/028

Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

公开(公告)号：US11183612B2

公开(公告)日：2021-11-23

申请号：US16758172

申请日：2018-10-23

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren ,  Christoph Klemp

IPC: H01L33/00 ,  H01L21/78

Abstract: The invention relates to a method for producing at least one optoelectronic component (100) comprising the steps
A) providing an auxiliary carrier (1),
B) epitaxially applying a sacrificial layer (2) on the auxiliary carrier (1), wherein the sacrificial layer (2) comprises germanium,
C) epitaxially applying a semiconductor layer sequence (3) on the sacrificial layer (2),
D) removing the sacrificial layer (2) by means of dry etching (9), such that the auxiliary carrier (1) is removed from the semiconductor layer sequence (3).

公开(公告)号：US11177421B2

公开(公告)日：2021-11-16

申请号：US16993791

申请日：2020-08-14

Applicant: OSRAM OLED GmbH

Inventor： Tony Albrecht ,  Tamas Lamfalusi ,  Christian Gatzhammer

IPC: H01L33/00 ,  H01L33/54 ,  H01L33/50 ,  H01L33/56 ,  H01L33/48

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including a connection surface; a first potting body; and a second potting body, wherein the first potting body covers all lateral side surfaces and the top surface of the semiconductor chip, the first potting body has a bottom surface flush with the connection surface, the second potting body has a bottom surface flush with the bottom surface, the second potting body completely covers all side surfaces of the first potting body facing away from the semiconductor chip, a top surface of the second potting body on the opposite of the connection surface is convexly curved, the first and second potting bodies have a contour in a lateral plane that is not similar, and the optoelectronic semiconductor chip has exclusively on its connection surface exposed electrical contact surfaces via which the semiconductor chip is electrically connectable and operable.

公开(公告)号：US11152231B2

公开(公告)日：2021-10-19

申请号：US16340364

申请日：2017-10-11

Applicant: OSRAM OLED GMBH

Inventor： Hans Lindberg

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C30B25/10 ,  C23C16/458 ,  H01L21/324 ,  H01L21/66 ,  H05B6/40

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a heating device includes a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite and a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane, wherein the first heating unit includes a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.

公开(公告)号：US11149908B1

公开(公告)日：2021-10-19

申请号：US17265093

申请日：2019-07-30

Applicant: OSRAM OLED GmbH

Inventor： Florian Boesl

IPC: F21K9/64 ,  F21K9/69 ,  B60Q1/56 ,  F21K9/90 ,  F21Y115/10

Abstract: A light emitting filament device comprising a carrier extending in a longitudinal direction and having a first main surface, a second main surface opposite to the first main surface, and two side surfaces interconnecting the two main surfaces. Optoelectronic components are disposed on the first main surface of the carrier. A first converter layer is arranged on the first main surface of the carrier and covers the optoelectronic components. A second converter layer is arranged on the second main surface of the carrier. The carrier is designed at at least one location along the longitudinal direction such that at least one of the two side surfaces includes an angle with the first main surface of greater than 90°. The carrier is trapezoidal in cross-section at the at least one location.

公开(公告)号：US20210320223A1

公开(公告)日：2021-10-14

申请号：US17267575

申请日：2019-08-13

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Katharina Werner ,  Bernd Böhm ,  Anna Strozecka-Assig ,  Anna Nirschl

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/30 ,  H01L33/38

Abstract: In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) having an active layer (10), a doped current spreading layer (11) and an output coupling layer (12), which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer comprises a larger lateral electrical conductivity than the output coupling layer. The output coupling layer comprises output coupling structures (121) for coupling out radiation on an exit side (120) facing away from the active layer. The output coupling layer comprises a lower absorption coefficient for primary radiation than the current spreading layer.

公开(公告)号：US20210320006A1

公开(公告)日：2021-10-14

申请号：US17267307

申请日：2019-08-09

Applicant: OSRAM OLED GmbH

Inventor： Martin Behringer ,  Alexander Behres ,  Asako Hirai

IPC: H01L21/02 ,  H01L21/683 ,  H01L23/00

Abstract: A method for producing a semiconductor component and workpiece are disclosed. In an embodiment a method includes forming a first semiconductor layer over a growth substrate, wherein a material of the first semiconductor layer is Inx1Aly1Ga(1-x1-y1)N, with 0≤xl≤1, 0≤yl≤1, applying a first modification substrate over the first semiconductor layer, wherein a material of the first modification substrate has a thermal expansion coefficient which is different from that of the first semiconductor layer, removing the growth substrate thereby obtaining a first layer stack, heating the first layer stack to a first growth temperature and growing a second semiconductor layer over a growth surface of the first semiconductor layer after heating the first layer stack, wherein due to heating a lattice constant of the first semiconductor layer is adapted to a lattice constant of the second semiconductor layer.

公开(公告)号：US20210305776A1

公开(公告)日：2021-09-30

申请号：US17263786

申请日：2019-07-30

Applicant: OSRAM OLED GmbH

Inventor： Peter JANDER ,  Michael ROTH ,  Tomasz SWIETLIK ,  Clemens VIERHEILIG

IPC: H01S5/06 ,  H01S5/22 ,  H01S5/323 ,  H01S5/026

Abstract: A laser diode chip is described, comprising: an n-type semiconductor region (3), a p-type semiconductor region (5), and an active layer (4) arranged between the n-type semiconductor region (3) and the p-type semiconductor region (5), an n-type contact (9) and a p-type contact (8), at least one heating element (14) arranged on a side of the laser diode chip facing the p-type semiconductor region (5), the heating element (14) functioning as a resistance heater, and at least one metallic seed layer (7, 11), wherein the heating element comprises a part (11) of the seed layer, and wherein the p-type contact (8) is arranged on a further part (7) of the seed layer (7, 11).