Abstract:
Monitoring of a pulsed plasma is described using an optical sensor. In one example, the invention includes receiving light emitted by a pulsed plasma in a semiconductor plasma processing chamber, sampling the received light at a sampling rate higher than a pulse rate of the pulsed plasma, wherein the sampled light has a periodic amplitude waveform and the sampling rate is higher than the period of the amplitude waveform, accumulating multiple sampled waveforms to form a mean waveform, and transmitting characteristics of the mean waveform to a chamber control tool.
Abstract:
A method (1) is described for the estimation of the spectral response of an infrared photodetector (32) that starts with response measurements of the infrared photodetector (32) obtained by varying the temperature of the black body (31) and is such as to estimate the spectral response by solving a numerical matrix problem. The method (1) is fully automatable and presents a cost reduction compared to the known methods because it does not require the use of a monochromator or a circular filter.
Abstract:
An analysis system (e.g., LIBS) includes a laser source generating a laser beam, a movable optic configured to move said laser beam to multiple locations on a sample, and a spectrometer responsive to photons emitted by the sample at those locations and having an output. A controller is responsive to a trigger signal and is configured in a moving spot cycle to adjust the moveable optic, activate the laser source sequentially generating photons at multiple locations on the sample, and process the spectrometer output at each location.
Abstract:
A device (1) for analysing the material composition of an object (2) has a casing (3) with a handle (4), an operating trigger (5), a window (6) for abutment against the object to be analysed and a display (7) for displaying the analysis of the object. Mounted in the casing is a housing (11) having a base (12) to which it is pivotally connected about an axis (14) at one end (15). At the other end (16), a stepper motor (17) is provided for traversing the end across the base. This end has an opening (18) generally in alignment with an opening (19) in the housing in which the window is mounted. Within the housing, are mounted: a laser diode (21); a laser amplification crystal (22); a collimating lens (23); a laser focusing lens (24). The components are arranged on a laser projection axis (25), which passes out through the openings (18,19). A plane mirror (32) can receive light emitted by a plasma P excited at the surface of the object (2). Light from the plasma P is reflected in the direction (34) across the projection axis to a curved focusing mirror (35). From this mirror, the light is reflected again across the projection axis and focused on the end of an optical (fibre (37) set in an aperture (38) in the side wall (39) of the housing opposite from the reflecting mirror.
Abstract:
An installation for spectroscopic measurement includes a focusing system (2) for focusing a laser beam (3) on a sample (4) for analysis and a system (17) for collecting and spectroscopically analyzing light rays emitted by the plasma (15), this system (17) including, in particular, an optical fiber (18) for collecting light. The installation also includes a motor-driven system (23) for moving the optical fiber (18), an optical imaging system (25) for imaging the plasma in the form of an image, and a processor and control unit (24). The unit (24) is capable of analyzing the image formed by the optical imaging system in order to select a zone of interest and controlling the motor-driven system (23) in order to place the optical fiber in a position enabling it to collect light coming from the selected zone of interest in the plasma.
Abstract:
Among the multiple OES data wavelengths, an analysis device identifies the wavelength of light emissions from a substance contained in the plasma from among multiple light emission wavelengths within the chamber by way of the steps of: measuring the light emission within the chamber during etching processing of the semiconductor wafer; finding the time-based fluctuation due to changes over time on each wavelength in the measured intensity of the light emissions in the chamber; comparing the time-based fluctuations in the wavelength of the light emitted from the pre-specified substance; and by using the comparison results, identifying the wavelength of the light emitted from the substance caused by light emission within the chamber.
Abstract:
A laser ablation system and methods are disclosed for performing material analysis. The laser ablation system includes a sample chamber which holds and encloses a sample material to be ablated; a laser source that produces a laser beam which is directed into the sample chamber to a surface of the sample material to cause laser ablation; a laser measuring device which is physically attached to the sample chamber to measure a power/energy value of the laser beam; and a material analyzing module that is coupled to the sample chamber to receive the ablated material from laser ablation of the sample material.
Abstract:
Disclosed herein is a component quantitative analyzing method depending on a depth of a CIGS film, the method including: generating plasma by irradiating a laser beam on the CIGS film and obtaining spectra generated from the plasma, selecting spectral lines having similar characteristics among spectra of specific elements of the CIGS film, and measuring component composition using a value obtained by summing intensities of the selected spectral lines.
Abstract:
A device (1) for use in optical spectroscopy and a method for its manufacture are described. The device includes at least one light source (8) and at least one spectrometer (3) fabricated integratively, the optical components of the at least one spectrometer (3) being optical microcomponents (11,13,16,19,20,21) which are mounted integratively on the top and/or bottom side (9,12) of a substrate board (2). In the method according to the present invention, at least one light source (8) is mounted on a substrate board (2), and at least one spectrometer (3) is produced monolithically in a three-dimensional integration on the substrate board (2). In this context, the spectrometer (3) that is produced according to the method is assembled from optical microcomponents (11,13,16,19,20,21).
Abstract:
A thermal measurement system that includes a light collection device and a detection system in communication with the device. The detection system includes two detection subsystems, wherein one subsystem is configured to detect light from a surface of an object, while the other subsystem is configured to detect light from the surface and a gas. The present invention has been described in terms of specific embodiment(s), and it is recognized that equivalents, alternatives, and modifications, aside from those expressly stated, are possible and within the scope of the appending claims.