Abstract:
A laser-ablation ion source for generating a low energy ion beam having low longitudinal and transverse emittance, including a supersonic nozzle, followed by an RF ion funnel. A laser source generates a laser beam which is focused by a lens to an ablation site. The ablation site is located upstream of the nozzle, at a distance of less than 10 mm from the nozzle aperture. The laser irradiates the ablation site through the nozzle aperture to generate the ions.
Abstract:
A system that includes an ion source, the ion source configured to produce ions having a first energy; an extractor to extract the ions; an accelerator configured to accelerate the ions; a focusing and steering device configured to focus and/or steer the accelerated ions; and a decelerator configured to decelerate the accelerated ions so that the ions have a second energy when they impact a substrate, wherein the second energy is less than the first energy.
Abstract:
The invention provides an element (12), comprising: a nanoporous insulating film (20) (such as a thin nanoporous diamond film) and first and second conducting layers (18a, 18b) on first and second opposed sides respectively of the film (20). Also provided are a vacuum pump (10), an ion source (80) and an ion trap (98), each comprising such an element (12).
Abstract:
A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS.
Abstract:
An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.
Abstract:
An ion source capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions is provided. The ion source includes at least one anode and at least one cathode. In certain example embodiments, the anode may have a recess formed therein in which ions to be included in the ion beam may accelerate. Walls of the recess optionally may be insulated using, for example, ceramic. One or more holes may be provided to allow a supply of gas to flow into the recess, and those holes optionally may be tapered such that they narrow towards the recess. Thus, certain example embodiments produce an ion source having a higher energy efficiency (e.g., having increasing ion energy).
Abstract:
An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.
Abstract:
The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.
Abstract:
An apparatus (200) for accelerating an ion beam comprising: a) a first electrode (202) having a proximal side and a distal side and having at least one aperture (201) therethrough, the wall of the aperture being shaped such that the radius of the aperture on the distal side of the first electrode is greater than that on the proximal side of the electrode; b) a second electrode (204) located such that it is adjacent to but spaced from the distal side of the first electrode and having at least one aperture therethrough; and c) a third electrode (206) located such that it is adjacent to and spaced from the second electrode and having at least one aperture therethrough, said at least one apertures in each electrode being aligned with corresponding apertures in the other electrodes; wherein the electrodes are arranged such that there is a potential difference between the first and second electrodes and a potential difference between the second and third electrodes.
Abstract:
A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation.