METHODS OF FORMING LAYERS
    62.
    发明申请
    METHODS OF FORMING LAYERS 审中-公开
    形成层的方法

    公开(公告)号:US20130161505A1

    公开(公告)日:2013-06-27

    申请号:US13440073

    申请日:2012-04-05

    CPC classification number: C23C14/48 H01J27/024 H01J49/06

    Abstract: A system that includes an ion source, the ion source configured to produce ions having a first energy; an extractor to extract the ions; an accelerator configured to accelerate the ions; a focusing and steering device configured to focus and/or steer the accelerated ions; and a decelerator configured to decelerate the accelerated ions so that the ions have a second energy when they impact a substrate, wherein the second energy is less than the first energy.

    Abstract translation: 一种包括离子源的系统,所述离子源被配置为产生具有第一能量的离子; 萃取器提取离子; 被配置为加速离子的加速器; 被配置为聚焦和/或引导加速离子的聚焦和转向装置; 以及减速器,其构造成使加速的离子减速,使得当离子冲击衬底时,所述离子具有第二能量,其中所述第二能量小于所述第一能量。

    NANOPOROUS VACUUM PUMP
    63.
    发明申请
    NANOPOROUS VACUUM PUMP 审中-公开
    NANOPOROUS真空泵

    公开(公告)号:US20130153763A1

    公开(公告)日:2013-06-20

    申请号:US13704959

    申请日:2011-06-17

    Applicant: Andrew Saint

    Inventor: Andrew Saint

    Abstract: The invention provides an element (12), comprising: a nanoporous insulating film (20) (such as a thin nanoporous diamond film) and first and second conducting layers (18a, 18b) on first and second opposed sides respectively of the film (20). Also provided are a vacuum pump (10), an ion source (80) and an ion trap (98), each comprising such an element (12).

    Abstract translation: 本发明提供了一种元件(12),包括:纳米多孔绝缘膜(20)(例如薄纳米多孔金刚石膜)和分别在膜(20)的第一和第二相对侧上的第一和第二导电层(18a,18b) )。 还提供了真空泵(10),离子源(80)和离子阱(98),每个包括这样的元件(12)。

    CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE
    65.
    发明申请
    CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE 有权
    清除离子源的提取孔

    公开(公告)号:US20110220812A1

    公开(公告)日:2011-09-15

    申请号:US12720933

    申请日:2010-03-10

    Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

    Abstract translation: 离子源包括限定具有提取孔的电弧室的电弧室壳体,以及擦拭器组件,其包括在处于停放位置的位于电弧室外部的擦拭器,并且构造成从停放位置驱动到操作位置以清洁提取孔 。 用于离子源的擦拭器组件包括擦拭器,其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

    Ion source with recess in electrode
    66.
    发明授权
    Ion source with recess in electrode 失效
    离子源带电极凹槽

    公开(公告)号:US07872422B2

    公开(公告)日:2011-01-18

    申请号:US11488189

    申请日:2006-07-18

    Inventor: Nestor P. Murphy

    CPC classification number: H01J37/08 H01J27/024 H01J27/143 H01J2237/31

    Abstract: An ion source capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions is provided. The ion source includes at least one anode and at least one cathode. In certain example embodiments, the anode may have a recess formed therein in which ions to be included in the ion beam may accelerate. Walls of the recess optionally may be insulated using, for example, ceramic. One or more holes may be provided to allow a supply of gas to flow into the recess, and those holes optionally may be tapered such that they narrow towards the recess. Thus, certain example embodiments produce an ion source having a higher energy efficiency (e.g., having increasing ion energy).

    Abstract translation: 提供了能够产生和/或发射可用于沉积衬底上的层或执行其它功能的离子束的离子源。 离子源包括至少一个阳极和至少一个阴极。 在某些示例性实施例中,阳极可以具有形成在其中的凹部,其中包括在离子束中的离子可以加速。 凹部的壁可以任选地使用例如陶瓷绝缘。 可以提供一个或多个孔以允许气体供应流入凹部,并且这些孔可选地可以是锥形的,使得它们朝向凹部变窄。 因此,某些示例性实施例产生具有较高能量效率(例如具有增加的离子能量)的离子源。

    Method and apparatus for extending equipment uptime in ion implantation
    68.
    发明授权
    Method and apparatus for extending equipment uptime in ion implantation 有权
    用于在离子注入中延长设备正常运行时间的方法和装置

    公开(公告)号:US07820981B2

    公开(公告)日:2010-10-26

    申请号:US10582392

    申请日:2004-12-09

    Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources. Methods and apparatus are described which enable long equipment uptime when decaborane and octadecarborane are used as feed materials, as well as when vaporized elemental arsenic and phosphorus are used, and which serve to enhance beam stability during ion implantation.

    Abstract translation: 离子源的使用寿命通过源具有使用反应性卤素气体(F或Cl)对离子源和引出电极进行原位蚀刻清洁的规定而增强或延长,并且具有延长使用寿命的特征 清洁之间的持续时间。 后者包括准确的蒸汽流量控制,离子束光学的精确聚焦,以及防止沉积物形成或防止电极破坏的引出电极的热控制。 包括用于产生用于半导体晶片处理的掺杂剂离子的离子源的装置耦合到远程等离子体源,其将F或Cl离子递送到第一离子源,以清除第一离子源和提取电极中的沉积物。 这些方法和装置在运行诸如升华蒸汽源的可冷凝进料气体时能够延长设备正常运行时间,并且特别适用于所谓的冷离子源。 描述了使用十硼烷和十八烷硼烷作为原料的长设备正常运行时间以及当使用蒸发的元素砷和磷时能够延长设备运行时间的方法和装置,并且其用于增强离子注入期间的束稳定性。

    APPARATUS
    69.
    发明申请
    APPARATUS 有权
    仪器

    公开(公告)号:US20100219740A1

    公开(公告)日:2010-09-02

    申请号:US12305848

    申请日:2007-06-29

    Abstract: An apparatus (200) for accelerating an ion beam comprising: a) a first electrode (202) having a proximal side and a distal side and having at least one aperture (201) therethrough, the wall of the aperture being shaped such that the radius of the aperture on the distal side of the first electrode is greater than that on the proximal side of the electrode; b) a second electrode (204) located such that it is adjacent to but spaced from the distal side of the first electrode and having at least one aperture therethrough; and c) a third electrode (206) located such that it is adjacent to and spaced from the second electrode and having at least one aperture therethrough, said at least one apertures in each electrode being aligned with corresponding apertures in the other electrodes; wherein the electrodes are arranged such that there is a potential difference between the first and second electrodes and a potential difference between the second and third electrodes.

    Abstract translation: 一种用于加速离子束的装置(200),包括:a)具有近侧和远侧的第一电极(202),并且具有穿过其中的至少一个孔(201),孔的壁成形为使得半径 在第一电极的远侧上的孔径大于电极的近侧上的孔径; b)第二电极(204),其定位成使得其与第一电极的远侧相邻但间隔开并且具有穿过其中的至少一个孔; 以及c)第三电极(206),其定位成使得其与所述第二电极相邻并间隔开并且具有穿过其中的至少一个孔,每个电极中的所述至少一个孔与其它电极中的相应孔对齐; 其中所述电极被布置成使得在所述第一和第二电极之间存在电位差和所述第二和第三电极之间的电位差。

    Controlling the flow of vapors sublimated from solids
    70.
    发明授权
    Controlling the flow of vapors sublimated from solids 有权
    控制从固体升华的蒸气流

    公开(公告)号:US07723700B2

    公开(公告)日:2010-05-25

    申请号:US10582524

    申请日:2004-12-09

    Abstract: A vapor delivery system for delivering a steady flow of sublimated vapor to a vacuum chamber comprises a vaporizer of solid material, a mechanical throttling valve, and a pressure gauge, followed by a vapor conduit to the vacuum chamber. The vapor flow rate is determined by both the temperature of the vaporizer and the setting of the conductance of the mechanical throttle valve located between the vaporizer and the vacuum chamber. The temperature of the vaporizer is determined by closed-loop control to a set-point temperature. The mechanical throttle valve is electrically controlled, e.g. the valve position is under closed-loop control to the output of the pressure gauge. In this way the vapor flow rate can be generally proportional to the pressure gauge output. All surfaces exposed to the vapor from the vaporizer to the vacuum chamber are heated to prevent condensation.

    Abstract translation: 用于将稳定的升华蒸气输送到真空室的蒸气输送系统包括固体材料的蒸发器,机械节流阀和压力计,随后是到真空室的蒸汽导管。 蒸汽流量由蒸发器的温度和位于蒸发器和真空室之间的机械节流阀的电导率的设定决定。 蒸发器的温度通过闭环控制确定为设定点温度。 机械节流阀是电控制的,例如, 阀门位置在压力计的输出端处于闭环控制下。 以这种方式,蒸汽流速可以与压力表输出大致成比例。 暴露于蒸发器到真空室的蒸汽的所有表面都被加热以防止冷凝。

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