Abstract:
Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle.
Abstract:
A focused charged particle beam apparatus including an aberration corrector, capable of finding the absolute value of the aberration coefficient at high speed, and capable of making high-accuracy adjustments at high speed. A deflection coil tilts the input beam relative to the object point, and measures the defocus data and aberration quantity at high speed while the beam is tilted from one image, and perform least squares fitting on these results to find the absolute value of the aberration coefficient prior to tilting the beam, and to adjust the aberration corrector.
Abstract:
The present invention provides a mass analyzing magnet which can bend a very wide charged particle ribbon beams through angles between 90 to 200 degrees. The shorter dimension of the ribbon beam is aligned with the magnetic field. The magnet can focus the longer dimension of the ribbon beam through a resolving slot inside the magnet for mass or momentum analysis. The magnet pole is shaped to increase the mass resolving power and to provide the focusing force in the direction of the shorter dimension of the ribbon beam. This magnet can achieve high mass resolving power with very small system aberrations for very wide ribbon beam. This feature is of significant value, for example, in the ion implantation industry. The ribbon beam width can be 300 mm, 450 mm and even 1000 mm. Integrated with the present invention, the ion implanter systems can be built to provide mass analyzed ribbon beams for various applications. The system will have much lower cost and much better ribbon beam quality than the ion implanters which are using conventional mass analyzing magnet.
Abstract:
A charged particle beam apparatus having an aberration correction capability at high acceleration voltages. The charged particle beam apparatus comprises a charged particle beam source; an extraction electrode to extract charged particles from the charged particle beam source; a charged particle beam gun including a means for converging a charged particle beam; an acceleration means for accelerating a charged particle beam emitted from the charged particle beam gun; and an aberration correction means disposed between the charged particle beam gun and the acceleration means, in which an aberration enough to cancel out an aberration of a charged particle beam on the specimen surface is provided to an extraction electrical potential or an equivalent beam at the initial acceleration stage.
Abstract:
The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.
Abstract:
A method for correcting astigmatism of an electronic optical column of an electron emission spectromicroscope, comprising the steps of: forming a reference structure on a surface of a sample comprising a structure of interest to be imaged, imaging the reference structure by the spectromicroscope with secondary electrons and with core level photoelectrons, eliminating astigmatism defects appearing during the imaging of the reference structure with secondary electrons and with core level photoelectrons, a material of the reference structure being chosen such that, during core level photoelectron imaging, the contrast C between the average intensity Ia of the material of the reference structure and the average intensity Ib of the material of the sample is such that: C = I a - I b I a + I b ≥ 0.2 .
Abstract translation:一种用于校正电子发射光谱显微镜的电子光学柱的散光的方法,包括以下步骤:在包含要成像的感兴趣结构的样品的表面上形成参考结构,用二次电子通过显微镜对参考结构进行成像 并且使用核心级光电子,消除在二次电子和核心级光电子参考结构成像期间出现的散光缺陷,参考结构的材料被选择为使得在核心级光电子成像期间,对比度C在平均强度 参考结构的材料1a和样品材料的平均强度Ib为:C = I a -I b I a + I b≥0.2。
Abstract:
A scanning electron microscope having a monochromator that can automatically adjust an electron beam entering the monochromator and operating conditions of the monochromator. The scanning electron microscope having a monochromator is equipped with, between an electron source and the monochromator, a first focusing lens for adjusting focusing of the electron beam entering the monochromator and a first astigmatism correcting lens for correcting astigmatism of the electron beam entering the monochromator. The microscope further includes a means of obtaining an image of an electron-beam adjustment sample disposed where the electron beam in the monochromator is focused, and based on the obtained image, driving the first focusing lens and the first astigmatism correcting lens so that the focusing and astigmatism of the electron beam entering the monochromator are adjusted.
Abstract:
An electron beam device comprises: a beam emitter for emitting a primary electron beam; an objective electron lens for focusing the primary electron beam onto a specimen, the objective lens defining an optical axis; a beam separator having a first dispersion for separating a signal electron beam from the primary electron beam; and a dispersion compensation element. The dispersion compensation element has a second dispersion, the dispersion compensation element being adapted for adjusting the second dispersion independently of an inclination angle of the primary beam downstream of the dispersion compensation element, such that the second dispersion substantially compensates the first dispersion. The dispersion compensation element is arranged upstream, along the primary electron beam, of the beam separator.
Abstract:
The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.
Abstract:
A corrective for eliminating the third-order aperture aberration and the first-order, first-degree axial chromatic aberration includes two correction pieces, which are arranged one behind the other in the direction of the optical axis, in which each correction piece has a plurality of quadrupole fields (QP) and at least one octupole field (OP.) Each correction piece is constructed such that it is symmetrical with respect to its central plane (S, S′) with each correction piece having an uneven number of at least five quadrupole fields (QP) and at least one octupole field (OP). Each correction piece is further constructed so that it is symmetrical with respect to its central plane. The central quadrupole field is arranged so that it is centered with respect to the central plane of the correction piece and is electromagnetic. The quadrupole fields of the two correction pieces are antisymmetrical and a transfer lens system is arranged such that it is symmetrical with respect to the central plane of the corrective between the correction pieces. The transfer lens system has two round lenses and the setting of the transfer lens system takes place so that the two round lenses image the central plane of the two correction pieces anamorphically onto one another, in which the enlargement in one main section is the reciprocal of the enlargement in the other main section and with an octupole field superimposed on the central quadrupole field.