公开(公告)号：US20220406711A1

公开(公告)日：2022-12-22

申请号：US17894662

申请日：2022-08-24

Applicant: FLOSFIA INC.

Inventor： Shogo MIZUMOTO ,  Hideaki YANAGIDA

IPC: H01L23/525 ,  H01L23/522 ,  H01L23/34

Abstract: Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.

公开(公告)号：US20220384663A1

公开(公告)日：2022-12-01

申请号：US17882148

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20220344477A1

公开(公告)日：2022-10-27

申请号：US17860670

申请日：2022-07-08

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Kazuyoshi NORIMATSU ,  Takashi SHINOHE

IPC: H01L29/24 ,  H01L29/10 ,  H01L23/46 ,  H01L29/04

Abstract: Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.

公开(公告)号：US20220302263A1

公开(公告)日：2022-09-22

申请号：US17832984

申请日：2022-06-06

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE ,  Rie TOKUDA ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L29/227 ,  H01L21/02 ,  H01L29/04 ,  C30B25/02 ,  H01L29/78 ,  H01L29/778 ,  H01L29/808 ,  H01L29/872 ,  H01L29/812 ,  H01L29/12 ,  C23C16/40 ,  C30B29/16 ,  H01L29/739 ,  H01L29/24

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US20220293740A1

公开(公告)日：2022-09-15

申请号：US17826435

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/24 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising at least, a high-resistance oxide film, which is placed in a direction in which a current flows, the high-resistance oxide film having a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; and a high-resistance oxide film, which is placed between the source electrode and the drain electrode and has a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; a high-resistance oxide film; and a substrate with the high-resistance oxide film being placed between the source electrode or/and the drain electrode and the substrate and having a resistance of 1.0×106 Ω·cm or higher.

公开(公告)号：US20220285543A1

公开(公告)日：2022-09-08

申请号：US17826724

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/78 ,  H01L29/43 ,  H01L29/786

Abstract: There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2V·s or higher.

公开(公告)号：US11152472B2

公开(公告)日：2021-10-19

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao Takahashi ,  Tatsuya Toriyama ,  Masahiro Sugimoto ,  Takashi Shinohe ,  Hideyuki Uehigashi ,  Junji Ohara ,  Fusao Hirose ,  Hideo Matsuki

IPC: H01L29/24 ,  H01L21/02 ,  C23C16/448 ,  H01L23/367 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H02M3/335

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US11152208B2

公开(公告)日：2021-10-19

申请号：US16332659

申请日：2017-09-14

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo Fujita ,  Takayuki Uchida ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/458

Abstract: A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.

公开(公告)号：US20210272805A1

公开(公告)日：2021-09-02

申请号：US17256414

申请日：2019-06-21

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L21/02 ,  H01L29/24 ,  C30B29/16 ,  C30B25/16 ,  C30B25/18 ,  C23C16/40 ,  C23C16/52

Abstract: The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.

公开(公告)号：US20210226002A1

公开(公告)日：2021-07-22

申请号：US17256402

申请日：2019-06-21

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  C30B29/20 ,  C30B25/18 ,  C23C16/40

Abstract: The disclosure provides a crystalline oxide film that has reduced defects such as dislocations due to a reduced facet growth. Also, the disclosure provides a crystalline oxide film that is useful for semiconductor devices and has an enhanced crystal quality. A crystalline oxide film, including: an epitaxial layer having a corundum structure, the lateral growth area is substantially free from a facet growth area, a growth direction of the lateral growth area that is c-axis direction or substantially c-axis direction, the lateral growth area including a dislocation line extending to the c-axis direction or substantially c-axis direction, a first crystal oxide and a second crystal oxide bonded to each other, that are crystal-grown in a direction parallel or approximately parallel to the x-axis.