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公开(公告)号:US09881788B2
公开(公告)日:2018-01-30
申请号:US14285544
申请日:2014-05-22
Applicant: Lam Research Corporation
Inventor: Yunsang Kim , Kaushik Chattopadhyay , Gregory Sexton , Youn Gi Hong
IPC: H01L21/00 , H01J37/00 , H01L21/02 , H01L27/115 , C23C16/52 , H01L21/67 , C23C16/458 , C23C16/02 , C23C16/44 , H01J37/32
CPC classification number: H01L21/02271 , C23C16/02 , C23C16/04 , C23C16/44 , C23C16/4401 , C23C16/455 , C23C16/45519 , C23C16/458 , C23C16/52 , H01J37/32082 , H01J37/32403 , H01J37/32715 , H01L21/02301 , H01L21/02315 , H01L21/02345 , H01L21/67069 , H01L21/67207 , H01L27/115
Abstract: The embodiments disclosed herein pertain to methods and apparatus for depositing stress compensating layers and sacrificial layers on either the front side or back side of a substrate. In various implementations, back side deposition occurs while the wafer is in a normal front side up orientation. The front/back side deposition may be performed to reduce stress introduced through deposition on the front side of the wafer. The back side deposition may also be performed to minimize back side particle-related problems that occur during post-deposition processing such as photolithography.
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公开(公告)号:US09875873B2
公开(公告)日:2018-01-23
申请号:US15501935
申请日:2014-08-08
Applicant: SHIMADZU CORPORATION
Inventor: Yoshihiro Ueno , Hiroshi Seki , Hiroshi Okuda
CPC classification number: H01J27/024 , B03C7/02 , G01N15/0266 , G01N27/62 , G01N27/622 , G01N2015/0038 , H01J37/32009 , H01J37/32082 , H01J37/321 , H01J37/32357 , H01J37/3244 , H01J37/32532 , H01J49/10 , H01J49/12
Abstract: A particle charger is provided with: a filter (28) partitioning the inside of a housing (20) into a first space (29) and second space (30); a particle introducer (22) for introducing a particle into the first space; a gas ion supplier (10) for supplying the first space with a gas ion; a potential gradient creator (26, 27, 31) for creating a potential difference within the housing so as to make the gas ion and a charged particle resulting from a contact of the aforementioned particle with the gas ion move toward the second space; an AC voltage supplier (32, 33) for applying AC voltages having a phase difference to the neighboring electrodes (28a, b) included in the filter; a controller (35) for performing a control for applying, to the plurality of electrodes, predetermined voltages so as to allow the charged particle to pass through a gap between the electrodes while trapping the gas ion by the electrodes; and a charged particle extractor (23, 25, 34) for extracting the charged particle admitted to the second space to the outside of the housing. By this configuration, the occurrence frequency of the multi-charging is suppressed.
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公开(公告)号:US09859127B1
公开(公告)日:2018-01-02
申请号:US15179792
申请日:2016-06-10
Applicant: Lam Research Corporation
Inventor: Zhongkui Tan , Qing Xu , Qian Fu , Sangjun Park
IPC: H01L21/3065 , H01L21/308 , G03F7/40 , H01J37/32
CPC classification number: H01J37/3244 , H01J37/32082 , H01L21/31116 , H01L21/31144
Abstract: A photon-assisted plasma processing method for processing a substrate with a process layer is provided. A process gas is flowed into the chamber. The process gas is formed into a plasma. The process layer is exposed to the plasma. The process layer is illuminated with a light with a wavelength of between 200 nm and 1 micron, while exposing the substrate to the plasma.
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公开(公告)号:US20170358429A1
公开(公告)日:2017-12-14
申请号:US15670074
申请日:2017-08-07
Applicant: TRUMPF Huettinger GmbH + Co. KG
Inventor: Moritz Nitschke
CPC classification number: H01J37/32174 , H01J37/32045 , H01J37/32082 , H01J37/32155 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32944 , H02J3/14 , H02J9/062 , H03F3/2175
Abstract: A power supply system for a plasma process includes two separate power supplies of essentially identical performance characteristics, including a first power supply and a second power supply, and a data transfer connection operably coupling the two power supplies for data communication between the two power supplies. The first power supply is configured to: receive, in a standby mode, data via the data transfer connection from the second power supply supplying power to a plasma process in a normal operating mode, and supply, in an active backup mode, power to the plasma process in place of the second power supply, as a function of the received data. The first power supply can supply in the active backup mode to the plasma process the power having one or more characteristics that are substantially the same as those of the power provided by the second power supply in the normal operating mode.
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公开(公告)号:US20170345618A1
公开(公告)日:2017-11-30
申请号:US15532743
申请日:2015-12-03
Applicant: COMET AG
Inventor: ROLAND SCHLIERF
IPC: H01J37/32
CPC classification number: H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J37/32174 , H01J37/32183 , H01J37/32935 , H01J37/3299 , H01J2237/327
Abstract: The invention describes a method of frequency tuning an electrical generator (100) for supplying electrical power to a plasma, wherein the method comprises a pulsed mode, the pulse mode comprising at least a high power pulse (314) comprising a high power level (304) and a low power pulse (312) comprising a low power level (302) different to zero power, the method comprising the steps of: —providing RF-power with a high power starting frequency set comprising at least one high power starting frequency (502, 504, 506) at the high power pulse (314) with a predefmed high power pulse shape; —providing RF-power with a low power starting frequency set comprising at least one low power starting frequency (512, 514) at the low power pulse (312) with a predefmed low power pulse shape; —determining a reflected high power at the high power starting frequency (502, 504, 506); —tuning the high power starting frequency (502, 504, 506) to a different first high power frequency if the reflected high power exceeds a high power threshold value such that the reflected high power decreases below the high power threshold value; —determining a reflected low power at the low power starting frequency (512, 514); —tuning the low power starting frequency (512, 514) to a different first low power frequency if the reflected low power exceeds a low power threshold value such that the reflected low power decreases below the low power threshold value. The invention further describes a corresponding electrical generator (100), plasma processing system and computer program product. The method, the electrical generator, the plasma processing system and the computer program product may have the advantage that the stability of the plasma with respect to repeated and essentially identical high and low power pulses is used to reduce the controlling effort and to check the stability of the plasma process.
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公开(公告)号:US20170338140A1
公开(公告)日:2017-11-23
申请号:US15157959
申请日:2016-05-18
Applicant: Lam Research Corporation
Inventor: Eric A. Pape
IPC: H01L21/683 , C23C16/455 , H01J37/32
CPC classification number: H01L21/6833 , C23C16/4404 , C23C16/4409 , C23C16/45544 , C23C16/4583 , H01J37/32082 , H01J37/32477 , H01J37/32513 , H01J37/32715 , H01J2237/334 , H01L21/6831 , H01L21/68735 , H01L21/68757 , H01L21/68785
Abstract: A substrate support in a substrate processing system includes a baseplate, a ceramic layer, and a bond layer. The ceramic layer is arranged on the baseplate to support a substrate. The bond layer is arranged between the ceramic layer and the baseplate. A seal is arranged between the ceramic layer and the baseplate around an outer perimeter of the bond layer. The seal includes an inner layer formed adjacent to the bond layer and an outer layer formed adjacent to the inner layer such that the inner layer is between the outer layer and the bond layer. The inner layer comprises a first material and the outer layer comprises a second material.
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77.
公开(公告)号:US09824884B1
公开(公告)日:2017-11-21
申请号:US15287176
申请日:2016-10-06
Applicant: LAM RESEARCH CORPORATION
Inventor: James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
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公开(公告)号:US20170330769A1
公开(公告)日:2017-11-16
申请号:US15529709
申请日:2015-11-25
Inventor: Qing SHE , Peng CHEN , Mengxin ZHAO , Peijun DING , Kui XU , Guodong BIAN
CPC classification number: H01L21/67028 , B08B7/0035 , C23C16/0245 , H01J37/32082 , H01J37/321 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01L21/02046 , H01L21/67069
Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.
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79.
公开(公告)号:US20170330764A1
公开(公告)日:2017-11-16
申请号:US15588553
申请日:2017-05-05
Applicant: Lam Research Corporation
Inventor: Canfeng Lai , Liang Meng
IPC: H01L21/3213 , H01J37/32 , H01L21/67
CPC classification number: H01L21/32136 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32183 , H01J37/32449 , H01J2237/334 , H01L21/67069
Abstract: Provided are methods and apparatuses for smoothly transitioning from a first plasma condition to a second plasma condition in a plasma processing chamber. An apparatus for plasma processing may be equipped with an RF power supply coupled to an impedance matching network to smoothly switch from a continuous wave (CW) plasma to a pulsing plasma, reversely, or in alternation without quenching the plasma. Or, the plasma processing chamber may be equipped to smoothly switch from a pulsing plasma at a first duty cycle to a pulsing mode at a second duty cycle without quenching the plasma. Such transitions may occur by ramping RF power, ramping duty cycle, and/or ramping pulsing frequency of the RF power supply being delivered to the plasma processing chamber so that impedance can be smoothly changed and matched by the impedance matching network during the transitions.
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公开(公告)号:US20170330736A1
公开(公告)日:2017-11-16
申请号:US15533901
申请日:2015-12-08
Applicant: SOLERAS ADVANCED COATINGS BVBA
Inventor: Wilmert DE BOSSCHER , Ivan VAN DE PUTTE
CPC classification number: H01J37/3405 , H01J37/32 , H01J37/32082 , H01J37/3435 , H01J37/3444 , H01J37/347
Abstract: A device for use in a sputter system, comprising at least a first end block and a second end block positioned at opposite sides of the sputter system. The device is adapted such that a target assembly comprising at least one target tube or sputter magnetron, when mounted on the first and second end blocks, may be powered actively with RF power at both sides of the assembly, and such that the target assembly, when mounted, is not actively powered continuously with RF power simultaneously at both extremities of a target tube or sputter magnetron. An assembly comprising said device and a control unit for controlling powering of opposite sides of the target assembly by RF power such that the target assembly, when mounted, is not actively powered continuously with RF power simultaneously at both extremities of a target tube or sputter magnetron.
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