公开(公告)号：US20210217869A1

公开(公告)日：2021-07-15

申请号：US17145651

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/872 ,  H01L29/66 ,  H01L23/367

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20210217854A1

公开(公告)日：2021-07-15

申请号：US17145700

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/45

Abstract: The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US11038026B2

公开(公告)日：2021-06-15

申请号：US16118402

申请日：2018-08-30

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

公开(公告)号：US20210119000A1

公开(公告)日：2021-04-22

申请号：US17114194

申请日：2020-12-07

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/24 ,  H01L33/44 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66 ,  H01L29/739 ,  H01L29/778 ,  H01L29/772 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L33/26

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

公开(公告)号：US10944015B2

公开(公告)日：2021-03-09

申请号：US16110136

申请日：2018-08-23

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/868 ,  H01L29/24 ,  H01L29/06 ,  H01L29/872 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.

公开(公告)号：US20210013311A1

公开(公告)日：2021-01-14

申请号：US16635259

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/78

Abstract: A semiconductor device including at least an inversion channel region includes an oxide semiconductor film containing a crystal that contains at least gallium oxide at the inversion channel region.

公开(公告)号：US20210013035A1

公开(公告)日：2021-01-14

申请号：US16332659

申请日：2017-09-14

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Takayuki UCHIDA ,  Kentaro KANEKO ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/40

Abstract: A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.

公开(公告)号：US20200212184A1

公开(公告)日：2020-07-02

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao TAKAHASHI ,  Tatsuya TORIYAMA ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Hideyuki UEHIGASHI ,  Junji OHARA ,  Fusao HIROSE ,  Hideo MATSUKI

IPC: H01L29/24 ,  H01L29/04 ,  H01L23/367 ,  H01L29/872 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/739 ,  H01L33/26 ,  H01L21/02 ,  C23C16/448

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US20190305091A1

公开(公告)日：2019-10-03

申请号：US16347360

申请日：2017-11-07

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Takashi SHINOHE ,  Rie TOKUDA ,  Masaya ODA ,  Toshimi HITORA

IPC: H01L29/227 ,  H01L29/04 ,  H01L21/02

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US20190267450A1

公开(公告)日：2019-08-29

申请号：US16284302

申请日：2019-02-25

Applicant: FLOSFIA INC.

Inventor： Takayoshi OSHIMA ,  Takashi SHINOHE ,  Isao TAKAHASHI

IPC: H01L29/15 ,  H01L21/02 ,  H01L29/04

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ω-scan X-ray diffraction (XRD) measurement.