公开(公告)号：US07550724B2

公开(公告)日：2009-06-23

申请号：US11520605

申请日：2006-09-14

Applicant: Takashi Ichimura ,  Takeshi Ogashiwa ,  Toshihide Agemura ,  Kenji Aoki

Inventor： Takashi Ichimura ,  Takeshi Ogashiwa ,  Toshihide Agemura ,  Kenji Aoki

IPC: G01N23/00

CPC classification number: H01J37/09 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0458

Abstract: An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.

Abstract translation: 电子束装置包括具有保持在超高真空度的内部空间以产生一次电子束的电子枪部分，具有保持在比用于扫描样本的电子枪部分的真空度更低的真空度的内部空间的镜部分 在电子枪部分中产生的一次电子束的电子探针聚焦在试样上，用于在电子枪部分和反射镜部分之间的内部空间中提供通信并使一次电子束通过的差动排气隔膜，以及控制 用于控制电子束装置中的各个组成元件。 具有多个不同光阑孔径的光阑机构设置在第二阳极和第一聚光透镜之间。

公开(公告)号：US07547899B2

公开(公告)日：2009-06-16

申请号：US11445677

申请日：2006-06-02

Applicant: John W. Vanderpot ,  Yongzhang Huang

Inventor： John W. Vanderpot ,  Yongzhang Huang

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Abstract translation: 提供了一种用于减少离子注入期间污染的系统，方法和装置。 提供了位于离子源和终端之间的离子源，端站和质量分析器，其中离子束由离子源形成并通过质量分析器传送到终端站。 包括粒子收集器，颗粒吸引子和屏蔽的离子束转储组件与质量分析器相关联，其中，所述粒子吸引子的电位可操作以吸引和约束所述颗粒收集器内的污染颗粒，并且其中所述屏蔽件可操作为 屏蔽质子分析仪内离子束电位的吸引子的电位。

公开(公告)号：US07528391B2

公开(公告)日：2009-05-05

申请号：US11615386

申请日：2006-12-22

Applicant: Russell J. Low

Inventor： Russell J. Low

IPC: G21K1/08

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

Abstract translation: 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

公开(公告)号：US07482598B2

公开(公告)日：2009-01-27

申请号：US11567485

申请日：2006-12-06

Applicant: Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

Inventor： Russell J. Low ,  Jonathan Gerald England ,  Stephen E. Krause ,  Eric D. Hermanson

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Abstract translation: 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

公开(公告)号：US20080265174A1

公开(公告)日：2008-10-30

申请号：US12103321

申请日：2008-04-15

Applicant: Makoto HIRAMOTO ,  Takashi Kamikubo ,  Shuichi Tamamushi

Inventor： Makoto HIRAMOTO ,  Takashi Kamikubo ,  Shuichi Tamamushi

IPC: H01J3/26

CPC classification number: H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0209 ,  H01J2237/3045 ,  H01J2237/30461

Abstract: A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.

Abstract translation: 带电粒子束写入装置包括被配置为照射光束的单元，被配置为使光束偏转的偏转器，配置有目标的台阶，其被配置为连续地进行移动;配置成将光束聚焦到目标上的透镜， 被配置为计算校正量，用于校正由由透镜引起的第一磁场产生的目标表面上的光束的位置偏移和由由第一磁场和移动的所产生的涡流引起的第二磁场 所述单元被配置为使用所述校正量来计算已经校正了所述目标的表面上的位置偏移的校正位置，以及被配置为控制所述偏转器使得所述光束可能偏转到所述校正位置的单元。

公开(公告)号：US07435972B2

公开(公告)日：2008-10-14

申请号：US11714235

申请日：2007-03-06

Applicant: Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

Inventor： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

IPC: H01J49/00 ,  H01J27/00 ,  G21K5/10

CPC classification number: H01J37/09 ,  H01J2237/022 ,  H01J2237/0805 ,  H01J2237/3109

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract translation: 在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。 优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

公开(公告)号：US07435956B2

公开(公告)日：2008-10-14

申请号：US11225376

申请日：2005-09-12

Applicant: N. William Parker

Inventor： N. William Parker

IPC: H01J37/28 ,  H01J37/147

CPC classification number: H01J37/256 ,  H01J9/42 ,  H01J37/09 ,  H01J37/147 ,  H01J37/244 ,  H01J2237/0492 ,  H01J2237/1501 ,  H01J2237/162 ,  H01J2237/188 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: A charged particle optical system for testing, imaging or inspecting substrates comprises: a charged particle optical assembly configured to produce a line of charged particle beams equally spaced along a main scan axis, each beam being deflectable through a large angle along the main scan axis; and linear detector optics aligned along the main scan axis. The detector optics includes a linear secondary electron detector, a field free tube, voltage contrast plates and a linear backscattered electron detector. The large beam deflection is achieved using an electrostatic deflector for which the exit aperture is larger than the entrance aperture. One embodiment of the deflector includes: two parallel plates with chamfered inner surfaces disposed perpendicularly to the main scan axis; and a multiplicity of electrodes positioned peripherally in the gap between the plates, the electrodes being configured to maintain a uniform electric field transverse to the main scan axis.

Abstract translation: 用于测试，成像或检查基板的带电粒子光学系统包括：带电粒子光学组件，被配置为产生沿主扫描轴等距间隔的带电粒子束线，每个束可沿主扫描轴线以大角度偏转; 以及沿主扫描轴对准的线性检测器光学元件。 检测器光学器件包括线性二次电子检测器，无磁场管，电压对比板和线性背散射电子检测器。 使用静电偏转器实现大的光束偏转，出射孔大于入射孔。 偏转器的一个实施例包括：具有与主扫描轴垂直设置的倒角内表面的两个平行板; 以及多个电极位于板之间的间隙周边，电极被配置为保持横向于主扫描轴的均匀电场。

公开(公告)号：US20080218054A1

公开(公告)日：2008-09-11

申请号：US11683596

申请日：2007-03-08

Applicant: Lonn E. Moore ,  Rajinder S. Dhaliwal ,  Maris A. Sturans

Inventor： Lonn E. Moore ,  Rajinder S. Dhaliwal ,  Maris A. Sturans

IPC: H01J29/70

CPC classification number: H01J37/16 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0268 ,  H01J2237/16

Abstract: Embodiments of the present invention provide an apparatus employing an electron beam to expose the structure of a micro device and produce an image of the structure. The apparatus includes an electron gun producing the electron beam; an electron beam column having one or more segments that shape, focus and/or deflect the electron beams; and one or more center tubes along the electron beam column that provides a high vacuum environment for and guiding the electron beam to a target object coated with an electron sensitive resist. At least one of the center tubes is a carbon tube made of solid carbon material.

Abstract translation: 本发明的实施例提供一种使用电子束来暴露微器件的结构并产生该结构的图像的装置。 该装置包括产生电子束的电子枪; 具有一个或多个使电子束成形，聚焦和/或偏转的段的电子束柱; 以及沿着电子束柱的一个或多个中心管，其提供高真空环境并将电子束引导到涂覆有电子敏感抗蚀剂的目标物体。 至少一个中心管是由固体碳材料制成的碳管。

公开(公告)号：US07378670B2

公开(公告)日：2008-05-27

申请号：US10177970

申请日：2002-06-21

Applicant: Cornel Danciu ,  Thomas Abels ,  Brian Good

Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC: G21K5/10

CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US20080116391A1

公开(公告)日：2008-05-22

申请号：US11943241

申请日：2007-11-20

Applicant: Hiroyuki Ito ,  Yuko Sasaki ,  Tohru Ishitani ,  Yoshinori Nakayama

Inventor： Hiroyuki Ito ,  Yuko Sasaki ,  Tohru Ishitani ,  Yoshinori Nakayama

IPC: G21K1/087 ,  G21K1/093

CPC classification number: H01J37/141 ,  H01J37/09 ,  H01J37/12 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/142 ,  H01J2237/1534 ,  H01J2237/303

Abstract: The present invention relates to an orbit correction method for a charged particle beam, and aims to solve problems inherent in conventional aberration correction systems and to provide a low-cost, high-precision, high-resolution optical converging system for a charged particle beam. To this end, employed is a configuration in which a beam orbit is limited in ring zone form to form a distribution of electromagnetic field converging toward the center of a beam orbit axis. Consequently, a nonlinear action outwardly augmented, typified by spherical aberration of an electron lens, can be cancelled out. Specifically, this effect can be achieved by an electron disposed on the axis and subjected to a voltage to facilitate the occurrence of electrostatic focusing. For a magnetic field, this effect can be achieved by forming a coil radially distributed-wound on a surface equiangularly divided in the direction of rotation to control convergence of a magnetic flux density.

Abstract translation: 本发明涉及一种用于带电粒子束的轨道校正方法，其目的在于解决常规像差校正系统中固有的问题，并提供一种用于带电粒子束的低成本，高精度，高分辨率的聚光系统。 为此，所采用的是波束轨道受环形形式限制以形成朝向光束轨道中心收敛的电磁场分布的结构。 因此，可以抵消以电子透镜的球面像差为代表的向外扩大的非线性动作。 具体地说，这种效果可以通过设置在轴上的电子元件实现，并且经受电压以便于静电聚焦的发生。 对于磁场，这种效果可以通过在旋转方向上等角地分割的表面上形成径向分布缠绕的线圈来实现，以控制磁通密度的收敛。