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公开(公告)号：KR102066301B1
公开(公告)日：2020-01-14
申请号：KR1020147027096
申请日：2013-11-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: G03F7/004 , G03F7/38 , H01L21/027 , H01L21/311 , H01L21/67 , H01L21/687 , B05C9/14
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公开(公告)号：KR1020150007279A
公开(公告)日：2015-01-20
申请号：KR1020147027564
申请日：2013-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: B05D7/24 , B05D3/06 , B05D3/10 , G03F7/40 , H01L21/027
CPC classification number: G03F7/40 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/2002 , G03F7/405 , H01L21/0271 , H01L21/0337 , H01L21/31133 , H01L21/67109 , H01L21/67115 , H01L21/6715 , H01L21/67178
Abstract: 본 발명은 블록 공중합체를 사용하여 기판 상에 패턴을 형성하는 패턴 형성 방법이며, 적어도 2종류의 중합체를 포함하는 블록 공중합체의 막을 기판에 형성하는 스텝과, 그 블록 공중합체의 막을 가열하는 스텝과, 가열된 블록 공중합체의 막에 대해 불활성 가스의 분위기 하에서 자외광을 조사하는 스텝과, 자외광이 조사된 블록 공중합체의 막에 유기 용제를 공급하는 스텝을 갖는다.
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公开(公告)号：KR1020130000340A
公开(公告)日：2013-01-02
申请号：KR1020120066003
申请日：2012-06-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/324
CPC classification number: H01L21/67115 , H05B3/0033 , H01L21/0274 , H01L21/3247
Abstract: PURPOSE: A heating treatment apparatus and a heat treating method are provided to rapidly heat a substrate by using a light emitting diode as a heating source. CONSTITUTION: A substrate(W) is horizontally supported. The substrate is heated by a heating source using a light emitting diode. Radiation light having the light emitting diode is irradiated on a substrate material. An arrangement plate(2) faces the heating source while the light emitting diode is in off state. A cooling part cools the substrate by using the arrangement plate. [Reference numerals] (a) Incoming; (A3,A2,A1) Cooling water OFF; (b) Transmitting; (BB) Cooling water ON; (c) Heating; (C1,C2,C3,C4) Elevating pin; (d) Cooling; (D1,D2) Arrangement plate; (E1,E2,E3,E4) LED module; (FF) Cooling water
Abstract translation: 目的：提供一种加热处理装置和热处理方法，通过使用发光二极管作为加热源来快速加热基板。 构成：水平支撑衬底（W）。 基板通过使用发光二极管的加热源加热。 具有发光二极管的放射线照射在基板材料上。 当发光二极管处于关闭状态时，布置板（2）面向加热源。 冷却部使用排列板冷却基板。 （附图标记）（a）传入; （A3，A2，A1）冷却水关闭; （b）传送; （BB）冷却水打开; （c）加热; （C1，C2，C3，C4）升降销; （d）冷却; （D1，D2）排列板; （E1，E2，E3，E4）LED模块; （FF）冷却水
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公开(公告)号：KR101967503B1
公开(公告)日：2019-04-09
申请号：KR1020157008388
申请日：2013-09-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/67 , H01L21/677 , H01L21/687 , H01L21/3105
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公开(公告)号：KR101747454B1
公开(公告)日：2017-06-14
申请号：KR1020120066003
申请日：2012-06-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/324
CPC classification number: H01L21/67115 , H05B3/0033
Abstract: 본발명은, 피처리기판을가열처리하고, 이어서냉각하는열처리기술에있어서, 높은스루풋을얻을수 있으며, 열처리장치의전유면적이작은열처리기술을제공하는것을과제로한다. 웨이퍼(W)의가열처리를 LED 모듈(3)로부터웨이퍼(W)에그 흡수파장광인적외광을조사함으로써행하고있다. 이와같이복사에의해웨이퍼(W)를가열하고있기때문에, 웨이퍼(W)를신속하게가열할수 있다. 또한열원으로서 LED(35)를이용하고있으며, LED(35)의온도상승은작기때문에, 가열처리후의냉각처리를가열처리와동일한처리영역에서행할수 있다. 이때문에, 본열처리장치의설치면적을작게억제할수 있다. 또한가열처리영역과냉각처리영역사이의이동시간을절약할수 있기때문에, 가열처리및 그후의냉각처리를합한일련의처리시간을단축하는것이가능해져, 스루풋의향상을도모할수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020090093788A
公开(公告)日：2009-09-02
申请号：KR1020080134351
申请日：2008-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/316 , H01L21/02126 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/0337 , H01L21/31144 , H01L21/312 , H01L21/3122 , G03F7/0002 , H01L21/67276
Abstract: A pattern forming method and method for manufacturing semiconductor device are provided to form a fine resist pattern exceeding the exposure limit by using solvent on the under layer. The catalytic layer(3) is formed on the under layer having concavo-convex according to the concavo-convex of the under layer. The flowable material is coated with on the catalytic layer and the coating film(4). The coating film is reacted with the catalytic layer to form the insolubized layer(5). The insolubizing layer remains by removing a nonreacted part of the coating film with the solvent. The catalyst of the catalytic layer is the basic catalyst. The basic catalyst is the amino group coupling agent. Before the coating film is applied. The processing enhancing adhesion between the substrate(1) and the catalytic layer is performed.
Abstract translation: 提供一种用于制造半导体器件的图案形成方法和方法，以通过在下层上使用溶剂形成超过暴露极限的精细抗蚀剂图案。 催化剂层（3）根据底层的凹凸形成在具有凹凸的下层上。 可流动材料涂覆在催化层和涂膜（4）上。 使涂膜与催化剂层反应形成不溶层（5）。 通过用溶剂除去涂膜的未反应部分而保留不溶层。 催化剂层的催化剂是碱性催化剂。 碱性催化剂是氨基偶联剂。 涂膜前。 进行提高基板（1）和催化剂层之间的粘附性的加工。
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公开(公告)号：KR1020170122199A
公开(公告)日：2017-11-03
申请号：KR1020177024151
申请日：2016-02-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: G03F7/00 , H01L21/027 , C08F297/00 , B82Y40/00
CPC classification number: B81C1/00031 , B81C1/00428 , B81C2201/0149 , B82Y40/00 , C08F297/00 , H01L21/0271 , H01L21/0337 , H01L21/67178 , H01L21/67742
Abstract: 친수성폴리머(411)와소수성폴리머(412)를포함하는블록공중합체를이용한기판처리방법은폴리머분리공정을포함하고, 블록공중합체에서의친수성폴리머의분자량의비율은, 폴리머분리공정후에친수성폴리머(411)가평면에서보아육방최밀구조에대응하는위치에배열되도록 20%∼40%로조정되고, 폴리머분리공정에서는, 소수성의도포막에의한원형상의각 패턴(404) 상에원기둥형의제1 친수성폴리머(411a)를각각상분리시키며, 각제1 친수성폴리머(411a) 사이에, 원기둥형의제2 친수성폴리머(411b)를상분리시키고, 제1 친수성폴리머(411a)와제2 친수성폴리머(411b)가평면에서보아육방최밀구조에대응하는위치에배열되도록, 원형상의패턴(404)의직경이정해져있다.
Abstract translation: 亲水性聚合物411和使用包括疏水性聚合物（412）的嵌段共聚物的基板处理方法的分子量的比包含聚合物分离步骤，该亲水聚合物eseoui嵌段共聚物中，亲水性聚合物（411，聚合物分离过程之后 ）被调整为20-40％，以便被布置在对应于所述六角形的最高密度结构的位置，如从侧面Gapyung，聚合物分离步骤，在圆上的各个图案404中的第一亲水圆柱形观察由于疏水图覆盖膜 聚合物（411A），分别的sikimyeo相分离，gakje一种亲水性聚合物（411A），所述圆筒形的第二亲水性聚合物的相分离（411B）和所述第一亲水性聚合物之间（411A）沃赫在Gapyung表面第二亲水性聚合物（411B） 圆形图案404的直径被确定为布置在对应于六边形最近结构的位置处。
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公开(公告)号：KR1020150058209A
公开(公告)日：2015-05-28
申请号：KR1020157006644
申请日：2013-09-27
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , G03F7/16 , G03F7/40
CPC classification number: H01L21/0274 , G03F7/0002 , G03F7/16 , G03F7/405 , H01J37/32889 , H01L21/0271 , H01L21/0273 , H01L21/31133 , H01L21/31138 , H01L21/6715 , H01L21/67253
Abstract: 본발명은, 친수성폴리머와소수성폴리머에대하여중간의친화성을갖는중성층을기판상에형성하고, 중성층상에형성된레지스트막을노광처리하며, 이어서노광처리후의레지스트막을현상하여레지스트패턴을형성하고, 레지스트패턴에극성을갖는유기용제를공급하여레지스트패턴을표면처리하며, 블록공중합체를중성층상에도포하여, 중성층상의블록공중합체를친수성폴리머와소수성폴리머로상분리시킨다.
Abstract translation: 本发明构造成：在基材上形成与亲水性聚合物和疏水性聚合物具有中等亲和力的中性层; 通过对形成在中性层上的抗蚀剂膜进行曝光处理，然后在曝光处理之后使抗蚀剂膜显影来形成抗蚀剂图案; 通过向抗蚀剂图案供给具有极性的有机溶剂，对抗蚀剂图案进行表面处理; 将嵌段共聚物施加到中性层上; 并将中性层上的嵌段共聚物相分离成亲水性聚合物和疏水性聚合物。
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公开(公告)号：KR1020130129851A
公开(公告)日：2013-11-29
申请号：KR1020130056697
申请日：2013-05-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0273 , B05C5/02 , B05C11/1007 , B05D1/40 , G03F7/16
Abstract: The present invention is to prevent a disordered pattern from being generated in a region where a pattern is not formed when the pattern is formed by a block copolymer on a substrate. Problems are solved by a coating device including a substrate holding part holding a substrate; a coating nozzle that is arranged in the upper region of the substrate holding part, supplies a coating solution including a block copolymer to the substrate supported by the substrate holding part, and has a coating solution path like a capillary tube and an injection hole; a transfer unit that reaches the injection hole of the coating nozzle to the substrate supported by the substrate holding part and relatively move the coating nozzle with regard to the substrate; a coating solution tank that stores the coating solution and connects the coating nozzle; a coating solution tank operation part controlling the level of the coating solution in the coating solution tank with regard to the height of the injection hole. [Reference numerals] (7) Control unit
Abstract translation: 本发明是为了防止在通过基板上的嵌段共聚物形成图案的情况下在不形成图案的区域中产生无序图案。 通过包括保持基板的基板保持部的涂布装置来解决问题; 布置在基板保持部的上部区域的涂布喷嘴，将由嵌段共聚物构成的涂布溶液供给到由基板保持部支撑的基板，并具有如毛细管和喷射孔的涂布液路径; 传送单元，其到达所述涂布喷嘴的喷射孔到由所述基板保持部支撑的所述基板，并相对于所述基板相对移动所述涂布喷嘴; 一个储存涂层溶液并连接涂层喷嘴的涂层溶液罐; 一个涂料溶液罐操作部分，用于控制涂料溶液罐中涂料溶液相对于喷射孔高度的水平。 （附图标记）（7）控制单元
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公开(公告)号：KR101857323B1
公开(公告)日：2018-05-11
申请号：KR1020147027564
申请日：2013-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: B05D7/24 , B05D3/06 , B05D3/10 , G03F7/40 , H01L21/027
CPC classification number: G03F7/40 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , G03F7/2002 , G03F7/405 , H01L21/0271 , H01L21/0337 , H01L21/31133 , H01L21/67109 , H01L21/67115 , H01L21/6715 , H01L21/67178
Abstract: 본발명은블록공중합체를사용하여기판상에패턴을형성하는패턴형성방법이며, 적어도 2종류의중합체를포함하는블록공중합체의막을기판에형성하는스텝과, 그블록공중합체의막을가열하는스텝과, 가열된블록공중합체의막에대해불활성가스의분위기하에서자외광을조사하는스텝과, 자외광이조사된블록공중합체의막에유기용제를공급하는스텝을갖는다.
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