公开(公告)号：WO2018065167A1

公开(公告)日：2018-04-12

申请号：PCT/EP2017/072590

申请日：2017-09-08

Applicant: ASML NETHERLANDS B.V.

Inventor： DONKERBROEK, Arend, Johannes ,  COTTAAR, Jeroen ,  THEEUWES, Thomas ,  KOOP, Erik, Johan

IPC: G03F9/00

Abstract: Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

Abstract translation: 提供了一种测量一个或多个衬底的高度轮廓的方法，包括使用第一传感器装置测量衬底上的一个或多个场的第一高度轮廓，第一高度轮廓是 第一场间部分和第一场内部分;使用第二传感器装置测量所述衬底上或另一衬底上的一个或多个另外的场的第二高度分布，所述第二高度分布是第二场间部分和第二场内部分的总和 从第一传感器布置的测量结果确定平均第一场内部分，并且确定来自第二场间部分和平均第一场内部分的其他场的高度轮廓，从而校正第二传感器布置的测量结果。 >

公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

公开(公告)号：WO2020001831A1

公开(公告)日：2020-01-02

申请号：PCT/EP2019/060912

申请日：2019-04-29

Applicant: ASML NETHERLANDS B.V.

Inventor： THEEUWES, Thomas ,  VAN INGEN SCHENAU, Koenraad ,  WOLTGENS, Pieter, Joseph, Marie

IPC: G03F7/20 ,  G03F1/70

Abstract: Disclosed is a method for assigning features into at least first features and second features, said first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein said method comprises assigning said features into said first features and said second features based on a patterning characteristic of the features.

公开(公告)号：WO2017149003A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054748

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract translation: 一种确定图案化过程的重叠的方法，所述方法包括：获得由单位单元的一个或多个物理实例重新引导的辐射的检测到的表示，其中所述单位单元具有标称的几何对称性 并且其中通过用辐射束照射衬底获得辐射的检测到的表示，使得衬底上的束点用单元单元的一个或多个物理实例填充; 以及根据来自检测到的辐射表示的光学特征值确定单元细胞的第一覆盖图的值与也可从相同的光学特征值获得的单元细胞的第二覆盖图的确定，其中第一覆盖图位于 与第二覆盖层不同的方向或者单元细胞部分的不同组合之间的覆盖层比第二覆盖层

公开(公告)号：WO2017148982A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054714

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract translation: 一种确定图案形成过程的重叠的方法，所述方法包括：用辐射束照射衬底，使得衬底上的束点用单元胞的一个或多个物理实例填充， 该单位晶格在重叠的标称值处具有几何对称性; 主要使用检测器检测由单位单元的一个或多个物理实例重新导向的零阶辐射; 以及由硬件计算机系统根据检测到的辐射的光学特性的值来确定单位单元的重叠的非标称值。

公开(公告)号：WO2022017705A1

公开(公告)日：2022-01-27

申请号：PCT/EP2021/066806

申请日：2021-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： NIKOLSKI, Pioter ,  THEEUWES, Thomas ,  CORRADI, Antonio ,  HSU, Duan-Fu, Stephen ,  JUNG, Sun Wook

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/70525 ,  G03F7/70616

Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining (610) contour data (615) relating to features to be provided to a substrate (625) across a plurality of layers, for each of a plurality of process conditions (600) associated with providing the features across said plurality of layers and failure mode data (650) describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine (640) a failure count for each process condition; and the process window is determined (655) by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

公开(公告)号：WO2019048147A1

公开(公告)日：2019-03-14

申请号：PCT/EP2018/071103

申请日：2018-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： DE WINTER, Laurentius, Cornelius ,  STOLK, Roland, Pieter ,  STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  HINNEN, Paul, Christiaan ,  JOCHEMSEN, Marinus ,  THEEUWES, Thomas ,  VAN SETTEN, Eelco

IPC: G03F7/20 ,  G03F1/24 ,  G21K1/06

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus- dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：WO2019042726A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/071418

申请日：2018-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：WO2013029957A2

公开(公告)日：2013-03-07

申请号：PCT/EP2012/065599

申请日：2012-08-09

Applicant: ASML NETHERLANDS B.V. ,  KISTEMAN, Arend ,  KIERS, Antoine ,  TEL, Wim ,  THEEUWES, Thomas

Inventor： KISTEMAN, Arend ,  KIERS, Antoine ,  TEL, Wim ,  THEEUWES, Thomas

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70616 ,  G03F7/70625 ,  G03F9/7026

Abstract: Disclosed is a method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises: exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from said interfield focus variation information.

Abstract translation: 公开了用于确定光刻投影设备的焦点校正的方法和相关设备。 该方法包括：在测试基板上曝光多个全局校正场，每个全局校正场包括多个全局校正标记，并且每个全息校正场以其上的倾斜聚焦偏移曝光; 测量所述多个全局校正标记中的每一个的依赖于焦点的特性以确定场间焦点变化信息; 并根据所述场间焦点变化信息计算场间焦点校正。

公开(公告)号：WO2023072526A1

公开(公告)日：2023-05-04

申请号：PCT/EP2022/077282

申请日：2022-09-30

Applicant: ASML NETHERLANDS B.V.

Inventor： BASTANI, Vahid ,  KNOPS, Raoul, Maarten, Simon ,  THEEUWES, Thomas ,  URBANCZYK, Adam, Jan ,  WILDENBERG, Jochem, Sebastiaan ,  VAN WIJK, Robert Jan

IPC: G03F7/20

Abstract: 2021P00202WO 19 Confidential ABSTRACT Disclosed is a method of determining a performance parameter distribution and/or associated quantile function. The method comprises obtaining a quantile function prediction model operable to predict a quantile value for a substrate position and given quantile probability such that the predicted quantile values vary monotonically as a function of quantile probability and using the trained quantile 5 function prediction model to predict quantile values for a plurality of different quantile probabilities for one or more locations on the substrate.